@inproceedings{892bb8f7196f4ac4b5d79e1925879b44,
title = "Characterization of dislocations and micropipes in 4H n+ SiC substrates",
abstract = "Etching of 4H-SiC wafers in molten KOH as a method for micropipe and dislocation density analysis was investigated. The obtained results were correlated with those of the synchrotron white beam x-ray topography. Heavily nitrogen-doped SiC shows a significantly different etching behavior in comparison with the low-doped material. This complicates identification of different types of threading defects. In particular, it is difficult to separate Threading Screw Dislocations (TSD) from Threading Edge Dislocations (TED). Depending on the level of doping and thermal history of the crystal, some of the etch pits emerging due to the 1c screw dislocations can be as large as those due to the micropipes.",
keywords = "Dislocations, KOH Etching, Micropipes, X-ray topography",
author = "Ping Wu and Murugesu Yoganathan and Ilya Zwieback and Yi Chen and Michael Dudley",
year = "2009",
doi = "10.4028/www.scientific.net/msf.600-603.333",
language = "English",
isbn = "9780878493579",
series = "Materials Science Forum",
publisher = "Trans Tech Publications Ltd",
pages = "333--336",
editor = "Akira Suzuki and Hajime Okumura and Kenji Fukuda and Shin-ichi Nishizawa and Tsunenobu Kimoto and Takashi Fuyuki",
booktitle = "Silicon Carbide and Related Materials 2007",
note = "12th International Conference on Silicon Carbide and Related Materials, ICSCRM 2007 ; Conference date: 14-10-2007 Through 19-10-2007",
}