Characterization of hazy morphology on alinp/gaas epitaxial wafers grown by organometallic vapor phase epitaxy

Hongyu Peng; Tuerxun Ailihumaer; Yafei Liu; Balaji Raghothamachar; Michael Dudley

doi:10.1149/09806.0109ecst

Characterization of hazy morphology on alinp/gaas epitaxial wafers grown by organometallic vapor phase epitaxy

Hongyu Peng
, Tuerxun Ailihumaer
, Yafei Liu
, Balaji Raghothamachar
, Michael Dudley

Materials Science and Engineering

Stony Brook University

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

Abstract

6-inch AlInP/GaAs epitaxial wafers grown by organometallic vapor phase epitaxy (OMVPE) technique are being developed for light emitting diodes (LEDs) applications. Defects such as dislocations and inclusions have been characterized by synchrotron X-ray topography. Burgers vector and line direction of the dislocations were determined by ray-tracing simulation. Moreover, epilayer surface of the samples grown under higher pressure reveals a hazy morphology, which is rougher compared to regular clear regions. Synchrotron X-ray topographs of the hazy regions showed blurred contrast, indicating disordered lattice arrangement. Internal structure of the hazy regions was studied by reciprocal space mapping (RSM), where weakened and broadened peaks around the clear epilayer peak were observed using 004 reflection, indicating continuously varying strain and tilt between the hazy region and the clear region.

Original language	English
Title of host publication	PRiME 2020
Subtitle of host publication	Joint Symposium: State-of-the-Art Program on Compound Semiconductors 63 (SOTAPOCS 63) -and- GaN and SiC Power Technologies 10
Editors	T. Anderson, J. K. Hite, R. P. Lynch, C. O'Dwyer, E. A. Douglas, Y. Zhao, M. Dudley, B. Raghothamachar, M. Bakowski, N. Ohtani
Publisher	IOP Publishing Ltd
Pages	109-116
Number of pages	8
Edition	6
ISBN (Electronic)	9781607689010
DOIs	https://doi.org/10.1149/09806.0109ecst
State	Published - 2020
Event	Pacific Rim Meeting on Electrochemical and Solid State Science 2020, PRiME 200 - Honolulu, United States Duration: Oct 4 2020 → Oct 9 2020

Publication series

Name	ECS Transactions
Number	6
Volume	98
ISSN (Print)	1938-6737
ISSN (Electronic)	1938-5862

Conference

Conference	Pacific Rim Meeting on Electrochemical and Solid State Science 2020, PRiME 200
Country/Territory	United States
City	Honolulu
Period	10/4/20 → 10/9/20

Access to Document

10.1149/09806.0109ecst

Cite this

Peng, H., Ailihumaer, T., Liu, Y., Raghothamachar, B., & Dudley, M. (2020). Characterization of hazy morphology on alinp/gaas epitaxial wafers grown by organometallic vapor phase epitaxy. In T. Anderson, J. K. Hite, R. P. Lynch, C. O'Dwyer, E. A. Douglas, Y. Zhao, M. Dudley, B. Raghothamachar, M. Bakowski, & N. Ohtani (Eds.), PRiME 2020: Joint Symposium: State-of-the-Art Program on Compound Semiconductors 63 (SOTAPOCS 63) -and- GaN and SiC Power Technologies 10 (6 ed., pp. 109-116). (ECS Transactions; Vol. 98, No. 6). IOP Publishing Ltd. https://doi.org/10.1149/09806.0109ecst

Peng, Hongyu ; Ailihumaer, Tuerxun ; Liu, Yafei et al. / Characterization of hazy morphology on alinp/gaas epitaxial wafers grown by organometallic vapor phase epitaxy. PRiME 2020: Joint Symposium: State-of-the-Art Program on Compound Semiconductors 63 (SOTAPOCS 63) -and- GaN and SiC Power Technologies 10. editor / T. Anderson ; J. K. Hite ; R. P. Lynch ; C. O'Dwyer ; E. A. Douglas ; Y. Zhao ; M. Dudley ; B. Raghothamachar ; M. Bakowski ; N. Ohtani. 6. ed. IOP Publishing Ltd, 2020. pp. 109-116 (ECS Transactions; 6).

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title = "Characterization of hazy morphology on alinp/gaas epitaxial wafers grown by organometallic vapor phase epitaxy",

abstract = "6-inch AlInP/GaAs epitaxial wafers grown by organometallic vapor phase epitaxy (OMVPE) technique are being developed for light emitting diodes (LEDs) applications. Defects such as dislocations and inclusions have been characterized by synchrotron X-ray topography. Burgers vector and line direction of the dislocations were determined by ray-tracing simulation. Moreover, epilayer surface of the samples grown under higher pressure reveals a hazy morphology, which is rougher compared to regular clear regions. Synchrotron X-ray topographs of the hazy regions showed blurred contrast, indicating disordered lattice arrangement. Internal structure of the hazy regions was studied by reciprocal space mapping (RSM), where weakened and broadened peaks around the clear epilayer peak were observed using 004 reflection, indicating continuously varying strain and tilt between the hazy region and the clear region.",

author = "Hongyu Peng and Tuerxun Ailihumaer and Yafei Liu and Balaji Raghothamachar and Michael Dudley",

note = "Publisher Copyright: {\textcopyright} The Electrochemical Society; Pacific Rim Meeting on Electrochemical and Solid State Science 2020, PRiME 200 ; Conference date: 04-10-2020 Through 09-10-2020",

year = "2020",

doi = "10.1149/09806.0109ecst",

language = "English",

series = "ECS Transactions",

publisher = "IOP Publishing Ltd",

number = "6",

pages = "109--116",

editor = "T. Anderson and Hite, \{J. K.\} and Lynch, \{R. P.\} and C. O'Dwyer and Douglas, \{E. A.\} and Y. Zhao and M. Dudley and B. Raghothamachar and M. Bakowski and N. Ohtani",

booktitle = "PRiME 2020",

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Peng, H, Ailihumaer, T, Liu, Y, Raghothamachar, B & Dudley, M 2020, Characterization of hazy morphology on alinp/gaas epitaxial wafers grown by organometallic vapor phase epitaxy. in T Anderson, JK Hite, RP Lynch, C O'Dwyer, EA Douglas, Y Zhao, M Dudley, B Raghothamachar, M Bakowski & N Ohtani (eds), PRiME 2020: Joint Symposium: State-of-the-Art Program on Compound Semiconductors 63 (SOTAPOCS 63) -and- GaN and SiC Power Technologies 10. 6 edn, ECS Transactions, no. 6, vol. 98, IOP Publishing Ltd, pp. 109-116, Pacific Rim Meeting on Electrochemical and Solid State Science 2020, PRiME 200, Honolulu, United States, 10/4/20. https://doi.org/10.1149/09806.0109ecst

Characterization of hazy morphology on alinp/gaas epitaxial wafers grown by organometallic vapor phase epitaxy. / Peng, Hongyu; Ailihumaer, Tuerxun; Liu, Yafei et al.
PRiME 2020: Joint Symposium: State-of-the-Art Program on Compound Semiconductors 63 (SOTAPOCS 63) -and- GaN and SiC Power Technologies 10. ed. / T. Anderson; J. K. Hite; R. P. Lynch; C. O'Dwyer; E. A. Douglas; Y. Zhao; M. Dudley; B. Raghothamachar; M. Bakowski; N. Ohtani. 6. ed. IOP Publishing Ltd, 2020. p. 109-116 (ECS Transactions; Vol. 98, No. 6).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - Characterization of hazy morphology on alinp/gaas epitaxial wafers grown by organometallic vapor phase epitaxy

AU - Peng, Hongyu

AU - Ailihumaer, Tuerxun

AU - Liu, Yafei

AU - Raghothamachar, Balaji

AU - Dudley, Michael

N1 - Publisher Copyright: © The Electrochemical Society

PY - 2020

Y1 - 2020

N2 - 6-inch AlInP/GaAs epitaxial wafers grown by organometallic vapor phase epitaxy (OMVPE) technique are being developed for light emitting diodes (LEDs) applications. Defects such as dislocations and inclusions have been characterized by synchrotron X-ray topography. Burgers vector and line direction of the dislocations were determined by ray-tracing simulation. Moreover, epilayer surface of the samples grown under higher pressure reveals a hazy morphology, which is rougher compared to regular clear regions. Synchrotron X-ray topographs of the hazy regions showed blurred contrast, indicating disordered lattice arrangement. Internal structure of the hazy regions was studied by reciprocal space mapping (RSM), where weakened and broadened peaks around the clear epilayer peak were observed using 004 reflection, indicating continuously varying strain and tilt between the hazy region and the clear region.

AB - 6-inch AlInP/GaAs epitaxial wafers grown by organometallic vapor phase epitaxy (OMVPE) technique are being developed for light emitting diodes (LEDs) applications. Defects such as dislocations and inclusions have been characterized by synchrotron X-ray topography. Burgers vector and line direction of the dislocations were determined by ray-tracing simulation. Moreover, epilayer surface of the samples grown under higher pressure reveals a hazy morphology, which is rougher compared to regular clear regions. Synchrotron X-ray topographs of the hazy regions showed blurred contrast, indicating disordered lattice arrangement. Internal structure of the hazy regions was studied by reciprocal space mapping (RSM), where weakened and broadened peaks around the clear epilayer peak were observed using 004 reflection, indicating continuously varying strain and tilt between the hazy region and the clear region.

UR - https://www.scopus.com/pages/publications/85092757559

U2 - 10.1149/09806.0109ecst

DO - 10.1149/09806.0109ecst

M3 - Conference contribution

AN - SCOPUS:85092757559

T3 - ECS Transactions

SP - 109

EP - 116

BT - PRiME 2020

A2 - Anderson, T.

A2 - Hite, J. K.

A2 - Lynch, R. P.

A2 - O'Dwyer, C.

A2 - Douglas, E. A.

A2 - Zhao, Y.

A2 - Dudley, M.

A2 - Raghothamachar, B.

A2 - Bakowski, M.

A2 - Ohtani, N.

PB - IOP Publishing Ltd

T2 - Pacific Rim Meeting on Electrochemical and Solid State Science 2020, PRiME 200

Y2 - 4 October 2020 through 9 October 2020

ER -

Peng H, Ailihumaer T, Liu Y, Raghothamachar B, Dudley M. Characterization of hazy morphology on alinp/gaas epitaxial wafers grown by organometallic vapor phase epitaxy. In Anderson T, Hite JK, Lynch RP, O'Dwyer C, Douglas EA, Zhao Y, Dudley M, Raghothamachar B, Bakowski M, Ohtani N, editors, PRiME 2020: Joint Symposium: State-of-the-Art Program on Compound Semiconductors 63 (SOTAPOCS 63) -and- GaN and SiC Power Technologies 10. 6 ed. IOP Publishing Ltd. 2020. p. 109-116. (ECS Transactions; 6). doi: 10.1149/09806.0109ecst

Characterization of hazy morphology on alinp/gaas epitaxial wafers grown by organometallic vapor phase epitaxy

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