Characterization of HYPRES' 4.5 kA/cm2 & 8 kA/cm2 Nb/AlOx/Nb fabrication processes

Daniel Yohannes; Saad Sarwana; Sergey K. Tolpygo; Anubhav Sahu; Yuri A. Polyakov; Vasili K. Semenov

doi:10.1109/TASC.2005.849701

Characterization of HYPRES' 4.5 kA/cm² & 8 kA/cm² Nb/AlO_x/Nb fabrication processes

Daniel Yohannes
, Saad Sarwana
, Sergey K. Tolpygo
, Anubhav Sahu
, Yuri A. Polyakov
, Vasili K. Semenov

Physics and Astronomy

Stony Brook University
HYPRES, Inc.

Research output: Contribution to journal › Article › peer-review

67 Scopus citations

Abstract

HYPRES has developed new fabrication processes for higher critical current density Josephson junctions (JJ's). These processes incorporate an additional anodization step for junction insulation, which enables fabrication of junctions down to submicron sizes. A set of new processing tools has been employed, including a high density (ICP) plasma etching of niobium and aluminum, and low temperature plasma-enhanced chemical vapor deposition of interlayer dielectric (SiO₂) from a TEOS source. A set of new parametric control monitor (PCM) test chips has been designed and implemented. Results of electric and SEM characterization of JJ's, wiring, and contact-hole etching are presented. The critical current spreads and shunt resistance uniformity along with the effects of junction shape are discussed. The critical current 1σ spreads of 1.2% have been achieved for the 4.5 kA/cm² process.

Original language	English
Pages (from-to)	90-93
Number of pages	4
Journal	IEEE Transactions on Applied Superconductivity
Volume	15
Issue number	2 PART I
DOIs	https://doi.org/10.1109/TASC.2005.849701
State	Published - Jun 2005

Keywords

Anodization
Critical current
Dielectric
Etching
Josephson junction (JJ)
Lithography

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10.1109/TASC.2005.849701

Cite this

@article{b542af04fa084708b4b894e625413aaf,

title = "Characterization of HYPRES' 4.5 kA/cm2 \& 8 kA/cm2 Nb/AlOx/Nb fabrication processes",

abstract = "HYPRES has developed new fabrication processes for higher critical current density Josephson junctions (JJ's). These processes incorporate an additional anodization step for junction insulation, which enables fabrication of junctions down to submicron sizes. A set of new processing tools has been employed, including a high density (ICP) plasma etching of niobium and aluminum, and low temperature plasma-enhanced chemical vapor deposition of interlayer dielectric (SiO2) from a TEOS source. A set of new parametric control monitor (PCM) test chips has been designed and implemented. Results of electric and SEM characterization of JJ's, wiring, and contact-hole etching are presented. The critical current spreads and shunt resistance uniformity along with the effects of junction shape are discussed. The critical current 1σ spreads of 1.2\% have been achieved for the 4.5 kA/cm2 process.",

keywords = "Anodization, Critical current, Dielectric, Etching, Josephson junction (JJ), Lithography",

author = "Daniel Yohannes and Saad Sarwana and Tolpygo, \{Sergey K.\} and Anubhav Sahu and Polyakov, \{Yuri A.\} and Semenov, \{Vasili K.\}",

year = "2005",

month = jun,

doi = "10.1109/TASC.2005.849701",

language = "English",

volume = "15",

pages = "90--93",

journal = "IEEE Transactions on Applied Superconductivity",

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T1 - Characterization of HYPRES' 4.5 kA/cm2 & 8 kA/cm2 Nb/AlOx/Nb fabrication processes

AU - Yohannes, Daniel

AU - Sarwana, Saad

AU - Tolpygo, Sergey K.

AU - Sahu, Anubhav

AU - Polyakov, Yuri A.

AU - Semenov, Vasili K.

PY - 2005/6

Y1 - 2005/6

N2 - HYPRES has developed new fabrication processes for higher critical current density Josephson junctions (JJ's). These processes incorporate an additional anodization step for junction insulation, which enables fabrication of junctions down to submicron sizes. A set of new processing tools has been employed, including a high density (ICP) plasma etching of niobium and aluminum, and low temperature plasma-enhanced chemical vapor deposition of interlayer dielectric (SiO2) from a TEOS source. A set of new parametric control monitor (PCM) test chips has been designed and implemented. Results of electric and SEM characterization of JJ's, wiring, and contact-hole etching are presented. The critical current spreads and shunt resistance uniformity along with the effects of junction shape are discussed. The critical current 1σ spreads of 1.2% have been achieved for the 4.5 kA/cm2 process.

AB - HYPRES has developed new fabrication processes for higher critical current density Josephson junctions (JJ's). These processes incorporate an additional anodization step for junction insulation, which enables fabrication of junctions down to submicron sizes. A set of new processing tools has been employed, including a high density (ICP) plasma etching of niobium and aluminum, and low temperature plasma-enhanced chemical vapor deposition of interlayer dielectric (SiO2) from a TEOS source. A set of new parametric control monitor (PCM) test chips has been designed and implemented. Results of electric and SEM characterization of JJ's, wiring, and contact-hole etching are presented. The critical current spreads and shunt resistance uniformity along with the effects of junction shape are discussed. The critical current 1σ spreads of 1.2% have been achieved for the 4.5 kA/cm2 process.

KW - Anodization

KW - Critical current

KW - Dielectric

KW - Etching

KW - Josephson junction (JJ)

KW - Lithography

UR - https://www.scopus.com/pages/publications/22044441620

U2 - 10.1109/TASC.2005.849701

DO - 10.1109/TASC.2005.849701

M3 - Article

AN - SCOPUS:22044441620

SN - 1051-8223

VL - 15

SP - 90

EP - 93

JO - IEEE Transactions on Applied Superconductivity

JF - IEEE Transactions on Applied Superconductivity

IS - 2 PART I

ER -

Characterization of HYPRES' 4.5 kA/cm² & 8 kA/cm² Nb/AlO_x/Nb fabrication processes

Abstract

Keywords

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