Characterization of semi-insulating GaAs for detector application

M. Rogalla; J. W. Chen; R. Geppert; M. Kienzle; R. Irsigler; J. Ludwig; K. Runge; M. Fiederle; K. W. Benz; Th Schmid; C. Da Via; S. Lauxtermann; X. Liu; J. Krueger; E. R. Weber

doi:10.1016/S0168-9002(96)00290-2

Characterization of semi-insulating GaAs for detector application

M. Rogalla
, J. W. Chen
, R. Geppert
, M. Kienzle
, R. Irsigler
, J. Ludwig
, K. Runge
, M. Fiederle
, K. W. Benz
, Th Schmid
, C. Da Via
, S. Lauxtermann
, X. Liu
, J. Krueger
, E. R. Weber

Physics and Astronomy

University of Freiburg
University of California at Berkeley

Research output: Contribution to journal › Article › peer-review

16 Scopus citations

Abstract

Schottky diodes made of semi-insulating (SI) gallium arsenide and bulk material received from various manufactures were studied by using magnetic circular dichroism of absorption (MCDA), near-infrared absorption (NIR), CV- and Hall-measurements. The results have been analysed to investigate the influence of the EL2/EL2⁺-concentration to the detector properties. The MCDA measurements of these different materials showed a variation of the EL2⁺-concentration between 3.0 and 6.5 × 10¹⁵ cm^-3. A likely dependence of the charge collection efficiency (CCE) for alpha particles on the EL2⁺-concentration was observed. Also an influence of the EL2⁺-concentration on the space charge density measured by CV and the leakage current density can be seen. No correlation between the room temperature mobility and the EL2⁺-concentration was found. We conclude that the EL2⁺-concentration and the position of the Fermi level have a influence on the detector performance.

Original language	English
Pages (from-to)	14-17
Number of pages	4
Journal	Nuclear Inst. and Methods in Physics Research, A
Volume	380
Issue number	1-2
DOIs	https://doi.org/10.1016/S0168-9002(96)00290-2
State	Published - Oct 1 1996

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Rogalla, M., Chen, J. W., Geppert, R., Kienzle, M., Irsigler, R., Ludwig, J., Runge, K., Fiederle, M., Benz, K. W., Schmid, T., Da Via, C., Lauxtermann, S., Liu, X., Krueger, J., & Weber, E. R. (1996). Characterization of semi-insulating GaAs for detector application. Nuclear Inst. and Methods in Physics Research, A, 380(1-2), 14-17. https://doi.org/10.1016/S0168-9002(96)00290-2

@article{23f1f915c059459ca654797d8580a959,

title = "Characterization of semi-insulating GaAs for detector application",

abstract = "Schottky diodes made of semi-insulating (SI) gallium arsenide and bulk material received from various manufactures were studied by using magnetic circular dichroism of absorption (MCDA), near-infrared absorption (NIR), CV- and Hall-measurements. The results have been analysed to investigate the influence of the EL2/EL2+-concentration to the detector properties. The MCDA measurements of these different materials showed a variation of the EL2+-concentration between 3.0 and 6.5 × 1015 cm-3. A likely dependence of the charge collection efficiency (CCE) for alpha particles on the EL2+-concentration was observed. Also an influence of the EL2+-concentration on the space charge density measured by CV and the leakage current density can be seen. No correlation between the room temperature mobility and the EL2+-concentration was found. We conclude that the EL2+-concentration and the position of the Fermi level have a influence on the detector performance.",

author = "M. Rogalla and Chen, \{J. W.\} and R. Geppert and M. Kienzle and R. Irsigler and J. Ludwig and K. Runge and M. Fiederle and Benz, \{K. W.\} and Th Schmid and \{Da Via\}, C. and S. Lauxtermann and X. Liu and J. Krueger and Weber, \{E. R.\}",

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doi = "10.1016/S0168-9002(96)00290-2",

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Rogalla, M, Chen, JW, Geppert, R, Kienzle, M, Irsigler, R, Ludwig, J, Runge, K, Fiederle, M, Benz, KW, Schmid, T, Da Via, C, Lauxtermann, S, Liu, X, Krueger, J & Weber, ER 1996, 'Characterization of semi-insulating GaAs for detector application', Nuclear Inst. and Methods in Physics Research, A, vol. 380, no. 1-2, pp. 14-17. https://doi.org/10.1016/S0168-9002(96)00290-2

TY - JOUR

T1 - Characterization of semi-insulating GaAs for detector application

AU - Rogalla, M.

AU - Chen, J. W.

AU - Geppert, R.

AU - Kienzle, M.

AU - Irsigler, R.

AU - Ludwig, J.

AU - Runge, K.

AU - Fiederle, M.

AU - Benz, K. W.

AU - Schmid, Th

AU - Da Via, C.

AU - Lauxtermann, S.

AU - Liu, X.

AU - Krueger, J.

AU - Weber, E. R.

PY - 1996/10/1

Y1 - 1996/10/1

N2 - Schottky diodes made of semi-insulating (SI) gallium arsenide and bulk material received from various manufactures were studied by using magnetic circular dichroism of absorption (MCDA), near-infrared absorption (NIR), CV- and Hall-measurements. The results have been analysed to investigate the influence of the EL2/EL2+-concentration to the detector properties. The MCDA measurements of these different materials showed a variation of the EL2+-concentration between 3.0 and 6.5 × 1015 cm-3. A likely dependence of the charge collection efficiency (CCE) for alpha particles on the EL2+-concentration was observed. Also an influence of the EL2+-concentration on the space charge density measured by CV and the leakage current density can be seen. No correlation between the room temperature mobility and the EL2+-concentration was found. We conclude that the EL2+-concentration and the position of the Fermi level have a influence on the detector performance.

AB - Schottky diodes made of semi-insulating (SI) gallium arsenide and bulk material received from various manufactures were studied by using magnetic circular dichroism of absorption (MCDA), near-infrared absorption (NIR), CV- and Hall-measurements. The results have been analysed to investigate the influence of the EL2/EL2+-concentration to the detector properties. The MCDA measurements of these different materials showed a variation of the EL2+-concentration between 3.0 and 6.5 × 1015 cm-3. A likely dependence of the charge collection efficiency (CCE) for alpha particles on the EL2+-concentration was observed. Also an influence of the EL2+-concentration on the space charge density measured by CV and the leakage current density can be seen. No correlation between the room temperature mobility and the EL2+-concentration was found. We conclude that the EL2+-concentration and the position of the Fermi level have a influence on the detector performance.

UR - https://www.scopus.com/pages/publications/0030260141

U2 - 10.1016/S0168-9002(96)00290-2

DO - 10.1016/S0168-9002(96)00290-2

M3 - Article

AN - SCOPUS:0030260141

SN - 0168-9002

VL - 380

SP - 14

EP - 17

JO - Nuclear Inst. and Methods in Physics Research, A

JF - Nuclear Inst. and Methods in Physics Research, A

IS - 1-2

ER -

Characterization of semi-insulating GaAs for detector application

Abstract

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