Charge collection efficiency of irradiated silicon detector operated at cryogenic temperatures

K. Borer; S. Janos; V. G. Palmieri; B. Dezillie; Z. Li; P. Collins; T. O. Niinikoski; C. Lourenço; P. Sonderegger; E. Borchi; M. Bruzzi; S. Pirollo; V. Granata; S. Pagano; S. Chapuy; Z. Dimcovski; E. Grigoriev; W. Bell; S. R.H. Devine; V. O'Shea; K. Smith; P. Berglund; W. De Boer; F. Hauler; S. Heising; L. Jungermann; L. Casagrande; V. Cindro; M. Mikuž; M. Zavartanik; C. Da Viá; A. Esposito; I. Konorov; S. Paul; L. Schmitt; S. Buontempo; N. D'Ambrosio; S. Pagano; G. Ruggiero; V. Eremin; E. Verbitskaya

doi:10.1016/S0168-9002(99)00799-8

Charge collection efficiency of irradiated silicon detector operated at cryogenic temperatures

K. Borer
, S. Janos
, V. G. Palmieri
, B. Dezillie
, Z. Li
, P. Collins
, T. O. Niinikoski
, C. Lourenço
, P. Sonderegger
, E. Borchi
, M. Bruzzi
, S. Pirollo
, V. Granata
, S. Pagano
, S. Chapuy
, Z. Dimcovski
, E. Grigoriev
, W. Bell
, S. R.H. Devine
, V. O'Shea

K. Smith, P. Berglund, W. De Boer, F. Hauler, S. Heising, L. Jungermann, L. Casagrande, V. Cindro, M. Mikuž, M. Zavartanik, C. Da Viá, A. Esposito, I. Konorov, S. Paul, L. Schmitt, S. Buontempo, N. D'Ambrosio, S. Pagano, G. Ruggiero, V. Eremin, E. Verbitskaya

Physics and Astronomy

University of Bern
Brookhaven National Laboratory
CERN
University of Florence
National Research Council of Italy
University of Geneva
University of Glasgow
Aalto University
Karlsruhe Institute of Technology
Laboratório de Instrumentação e Física Experimental de Partículas
Jožef Stefan Institute
Technical University of Munich
University of Naples Federico II
Ioffe Physical Technical Institute

Research output: Contribution to journal › Article › peer-review

46 Scopus citations

Abstract

The charge collection efficiency (CCE) of heavily irradiated silicon diode detectors was investigated at temperatures between 77 and 200 K. The CCE was found to depend on the radiation dose, bias voltage value and history, temperature, and bias current generated by light. The detector irradiated to the highest fluence 2×10¹⁵ n/cm² yields a MIP signal of at least 15000 e^- both at 250 V forward bias voltage, and at 250 V reverse bias voltage in the presence of a light-generated current. The `Lazarus effect' was thus shown to extend to fluences at least ten times higher than was previously studied.

Original language	English
Pages (from-to)	5-16
Number of pages	12
Journal	Nuclear Inst. and Methods in Physics Research, A
Volume	440
Issue number	1
DOIs	https://doi.org/10.1016/S0168-9002(99)00799-8
State	Published - Jan 21 2000

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Borer, K., Janos, S., Palmieri, V. G., Dezillie, B., Li, Z., Collins, P., Niinikoski, T. O., Lourenço, C., Sonderegger, P., Borchi, E., Bruzzi, M., Pirollo, S., Granata, V., Pagano, S., Chapuy, S., Dimcovski, Z., Grigoriev, E., Bell, W., Devine, S. R. H., ... Verbitskaya, E. (2000). Charge collection efficiency of irradiated silicon detector operated at cryogenic temperatures. Nuclear Inst. and Methods in Physics Research, A, 440(1), 5-16. https://doi.org/10.1016/S0168-9002(99)00799-8

@article{2774e69e7a1140b39383d99330f458f5,

title = "Charge collection efficiency of irradiated silicon detector operated at cryogenic temperatures",

abstract = "The charge collection efficiency (CCE) of heavily irradiated silicon diode detectors was investigated at temperatures between 77 and 200 K. The CCE was found to depend on the radiation dose, bias voltage value and history, temperature, and bias current generated by light. The detector irradiated to the highest fluence 2×1015 n/cm2 yields a MIP signal of at least 15000 e- both at 250 V forward bias voltage, and at 250 V reverse bias voltage in the presence of a light-generated current. The `Lazarus effect' was thus shown to extend to fluences at least ten times higher than was previously studied.",

author = "K. Borer and S. Janos and Palmieri, \{V. G.\} and B. Dezillie and Z. Li and P. Collins and Niinikoski, \{T. O.\} and C. Louren{\c c}o and P. Sonderegger and E. Borchi and M. Bruzzi and S. Pirollo and V. Granata and S. Pagano and S. Chapuy and Z. Dimcovski and E. Grigoriev and W. Bell and Devine, \{S. R.H.\} and V. O'Shea and K. Smith and P. Berglund and \{De Boer\}, W. and F. Hauler and S. Heising and L. Jungermann and L. Casagrande and V. Cindro and M. Miku{\v z} and M. Zavartanik and \{Da Vi{\'a}\}, C. and A. Esposito and I. Konorov and S. Paul and L. Schmitt and S. Buontempo and N. D'Ambrosio and S. Pagano and G. Ruggiero and V. Eremin and E. Verbitskaya",

year = "2000",

month = jan,

day = "21",

doi = "10.1016/S0168-9002(99)00799-8",

language = "English",

volume = "440",

pages = "5--16",

journal = "Nuclear Inst. and Methods in Physics Research, A",

issn = "0168-9002",

number = "1",

}

Borer, K, Janos, S, Palmieri, VG, Dezillie, B, Li, Z, Collins, P, Niinikoski, TO, Lourenço, C, Sonderegger, P, Borchi, E, Bruzzi, M, Pirollo, S, Granata, V, Pagano, S, Chapuy, S, Dimcovski, Z, Grigoriev, E, Bell, W, Devine, SRH, O'Shea, V, Smith, K, Berglund, P, De Boer, W, Hauler, F, Heising, S, Jungermann, L, Casagrande, L, Cindro, V, Mikuž, M, Zavartanik, M, Da Viá, C, Esposito, A, Konorov, I, Paul, S, Schmitt, L, Buontempo, S, D'Ambrosio, N, Pagano, S, Ruggiero, G, Eremin, V & Verbitskaya, E 2000, 'Charge collection efficiency of irradiated silicon detector operated at cryogenic temperatures', Nuclear Inst. and Methods in Physics Research, A, vol. 440, no. 1, pp. 5-16. https://doi.org/10.1016/S0168-9002(99)00799-8

TY - JOUR

T1 - Charge collection efficiency of irradiated silicon detector operated at cryogenic temperatures

AU - Borer, K.

AU - Janos, S.

AU - Palmieri, V. G.

AU - Dezillie, B.

AU - Li, Z.

AU - Collins, P.

AU - Niinikoski, T. O.

AU - Lourenço, C.

AU - Sonderegger, P.

AU - Borchi, E.

AU - Bruzzi, M.

AU - Pirollo, S.

AU - Granata, V.

AU - Pagano, S.

AU - Chapuy, S.

AU - Dimcovski, Z.

AU - Grigoriev, E.

AU - Bell, W.

AU - Devine, S. R.H.

AU - O'Shea, V.

AU - Smith, K.

AU - Berglund, P.

AU - De Boer, W.

AU - Hauler, F.

AU - Heising, S.

AU - Jungermann, L.

AU - Casagrande, L.

AU - Cindro, V.

AU - Mikuž, M.

AU - Zavartanik, M.

AU - Da Viá, C.

AU - Esposito, A.

AU - Konorov, I.

AU - Paul, S.

AU - Schmitt, L.

AU - Buontempo, S.

AU - D'Ambrosio, N.

AU - Pagano, S.

AU - Ruggiero, G.

AU - Eremin, V.

AU - Verbitskaya, E.

PY - 2000/1/21

Y1 - 2000/1/21

N2 - The charge collection efficiency (CCE) of heavily irradiated silicon diode detectors was investigated at temperatures between 77 and 200 K. The CCE was found to depend on the radiation dose, bias voltage value and history, temperature, and bias current generated by light. The detector irradiated to the highest fluence 2×1015 n/cm2 yields a MIP signal of at least 15000 e- both at 250 V forward bias voltage, and at 250 V reverse bias voltage in the presence of a light-generated current. The `Lazarus effect' was thus shown to extend to fluences at least ten times higher than was previously studied.

AB - The charge collection efficiency (CCE) of heavily irradiated silicon diode detectors was investigated at temperatures between 77 and 200 K. The CCE was found to depend on the radiation dose, bias voltage value and history, temperature, and bias current generated by light. The detector irradiated to the highest fluence 2×1015 n/cm2 yields a MIP signal of at least 15000 e- both at 250 V forward bias voltage, and at 250 V reverse bias voltage in the presence of a light-generated current. The `Lazarus effect' was thus shown to extend to fluences at least ten times higher than was previously studied.

UR - https://www.scopus.com/pages/publications/0033874671

U2 - 10.1016/S0168-9002(99)00799-8

DO - 10.1016/S0168-9002(99)00799-8

M3 - Article

AN - SCOPUS:0033874671

SN - 0168-9002

VL - 440

SP - 5

EP - 16

JO - Nuclear Inst. and Methods in Physics Research, A

JF - Nuclear Inst. and Methods in Physics Research, A

IS - 1

ER -

Charge collection efficiency of irradiated silicon detector operated at cryogenic temperatures

Abstract

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