@inproceedings{9884f4af0536416eb9357f373810b3e6,
title = "Charge collection efficiency recovery in heavily irradiated silicon detectors operated at cryogenic temperatures",
abstract = "The charge collection efficiency (CCE) of high resistivity silicon detectors, previously neutron irradiated up to 2 × 1015 n/cm2, was measured at different cryogenic temperatures and different bias voltages. In order to study reverse annealing (RA) effects, a few samples were heated to 80°C and kept at room temperature for several months after irradiation. For comparison other samples (NRA) where kept at -10 C after irradiation. The RA and NRA samples, measured at 250 V forward and reverse bias voltage, present a common temperature threshold at 150 K. Below 120 K the CCE is constant and ranges between 55\% and 65\% for the RA and NRA sample respectively. Similar CCE was measured for a device processed with low resistivity contacts (OHMIC), opening the prospective for a consistent reduction of the cost of large area particle tracking.",
author = "\{Da Via\}, C. and Bell, \{W. H.\} and P. Berglund and E. Borchi and K. Borer and M. Bruzzi and S. Buontempo and L. Casagrande and S. Chapuy and V. Cindro and Z. Dimcovski and N. D'Ambrosio and \{de Boer\}, W. and B. Dezillie and A. Esposito and \{et al\}, al",
year = "1999",
language = "English",
isbn = "0780350227",
series = "IEEE Nuclear Science Symposium and Medical Imaging Conference",
publisher = "IEEE",
pages = "298--301",
booktitle = "IEEE Nuclear Science Symposium and Medical Imaging Conference",
note = "Proceedings of the 1998 IEEE Nuclear Science Symposium Conference Record ; Conference date: 08-11-1998 Through 14-11-1998",
}