Charge sensitivity of the single electron tunneling transistor with discrete energy spectrum

D. V. Averin

doi:10.1063/1.353075

Charge sensitivity of the single electron tunneling transistor with discrete energy spectrum

D. V. Averin

Physics and Astronomy

Research output: Contribution to journal › Article › peer-review

19 Scopus citations

Abstract

The charge sensitivity of the single electron tunneling transistor is calculated in the regime when the discreteness of electron energy spectrum of its middle electrode is important.

Original language	English
Pages (from-to)	2593-2595
Number of pages	3
Journal	Journal of Applied Physics
Volume	73
Issue number	5
DOIs	https://doi.org/10.1063/1.353075
State	Published - 1993

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title = "Charge sensitivity of the single electron tunneling transistor with discrete energy spectrum",

abstract = "The charge sensitivity of the single electron tunneling transistor is calculated in the regime when the discreteness of electron energy spectrum of its middle electrode is important.",

author = "Averin, \{D. V.\}",

year = "1993",

doi = "10.1063/1.353075",

language = "English",

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journal = "Journal of Applied Physics",

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T1 - Charge sensitivity of the single electron tunneling transistor with discrete energy spectrum

AU - Averin, D. V.

PY - 1993

Y1 - 1993

N2 - The charge sensitivity of the single electron tunneling transistor is calculated in the regime when the discreteness of electron energy spectrum of its middle electrode is important.

AB - The charge sensitivity of the single electron tunneling transistor is calculated in the regime when the discreteness of electron energy spectrum of its middle electrode is important.

UR - https://www.scopus.com/pages/publications/0002209463

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DO - 10.1063/1.353075

M3 - Article

AN - SCOPUS:0002209463

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VL - 73

SP - 2593

EP - 2595

JO - Journal of Applied Physics

JF - Journal of Applied Physics

IS - 5

ER -

Charge sensitivity of the single electron tunneling transistor with discrete energy spectrum

Abstract

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