Chemical reactions induced by low-energy electron exposure on a novel inorganic-organic hybrid dry EUV photoresist deposited by molecular atomic layer deposition (MALD)

Dan N. Le; Su Min Hwang; Jihoon Woo; Seungsoo Choi; Taehee Park; Jean Francois Veyan; Nikhil Tiwale; Ashwanth Subramanian; Won Il Lee; Chang Yong Nam; Rino Choi; Jiyoung Kim

doi:10.1117/12.2641647

Chemical reactions induced by low-energy electron exposure on a novel inorganic-organic hybrid dry EUV photoresist deposited by molecular atomic layer deposition (MALD)

Dan N. Le
, Su Min Hwang
, Jihoon Woo
, Seungsoo Choi
, Taehee Park
, Jean Francois Veyan
, Nikhil Tiwale
, Ashwanth Subramanian
, Won Il Lee
, Chang Yong Nam
, Rino Choi
, Jiyoung Kim

Materials Science and Engineering

University of Texas at Dallas
Inha University
Brookhaven National Laboratory
Stony Brook University

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

12 Scopus citations

Abstract

Herein, we investigated the chemical reactions associated with low-energy electron exposures on an inorganic-organic hybrid thin film system deposited using molecular atomic layer deposition (MALD) for EUV photoresist applications. Using the hybrid thin films consisting of trimethylaluminum (TMA) and hydroquinone (HQ), we determined the critical doses and thickness contrast of the hybrid materials at various electron energies (up to 400 eV). The custom-built in-situ Fourier-Transform Infrared (FTIR) spectroscopy system, equipped with an electron flood gun and gas residual analyzer (RGA), was employed to monitor the chemical changes induced by low-energy electrons in the hybrid thin films. Based on the in-situ FTIR and RGA results, potential chemical reaction mechanisms responsible for the change in solubility of the TMA/HQ material are proposed.

Original language	English
Title of host publication	International Conference on Extreme Ultraviolet Lithography 2022
Editors	Toshiro Itani, Patrick P. Naulleau, Paolo A. Gargini, Kurt G. Ronse
Publisher	SPIE
ISBN (Electronic)	9781510656390
DOIs	https://doi.org/10.1117/12.2641647
State	Published - 2022
Event	International Conference on Extreme Ultraviolet Lithography 2022 - Monterey, United States Duration: Sep 26 2022 → Sep 29 2022

Publication series

Name	Proceedings of SPIE - The International Society for Optical Engineering
Volume	12292
ISSN (Print)	0277-786X
ISSN (Electronic)	1996-756X

Conference

Conference	International Conference on Extreme Ultraviolet Lithography 2022
Country/Territory	United States
City	Monterey
Period	09/26/22 → 09/29/22

Keywords

extreme ultraviolet lithography (EUVL)
hybrid resists
low-energy electron beam lithography (EBL)
molecular atomic layer deposition (MALD)
vapor phase deposition

Access to Document

10.1117/12.2641647

Cite this

Le, D. N., Hwang, S. M., Woo, J., Choi, S., Park, T., Veyan, J. F., Tiwale, N., Subramanian, A., Lee, W. I., Nam, C. Y., Choi, R., & Kim, J. (2022). Chemical reactions induced by low-energy electron exposure on a novel inorganic-organic hybrid dry EUV photoresist deposited by molecular atomic layer deposition (MALD). In T. Itani, P. P. Naulleau, P. A. Gargini, & K. G. Ronse (Eds.), International Conference on Extreme Ultraviolet Lithography 2022 Article 1229205 (Proceedings of SPIE - The International Society for Optical Engineering; Vol. 12292). SPIE. https://doi.org/10.1117/12.2641647

Le, Dan N. ; Hwang, Su Min ; Woo, Jihoon et al. / Chemical reactions induced by low-energy electron exposure on a novel inorganic-organic hybrid dry EUV photoresist deposited by molecular atomic layer deposition (MALD). International Conference on Extreme Ultraviolet Lithography 2022. editor / Toshiro Itani ; Patrick P. Naulleau ; Paolo A. Gargini ; Kurt G. Ronse. SPIE, 2022. (Proceedings of SPIE - The International Society for Optical Engineering).

@inproceedings{ee3ef8fa10474269ac14715e6c99170b,

title = "Chemical reactions induced by low-energy electron exposure on a novel inorganic-organic hybrid dry EUV photoresist deposited by molecular atomic layer deposition (MALD)",

abstract = "Herein, we investigated the chemical reactions associated with low-energy electron exposures on an inorganic-organic hybrid thin film system deposited using molecular atomic layer deposition (MALD) for EUV photoresist applications. Using the hybrid thin films consisting of trimethylaluminum (TMA) and hydroquinone (HQ), we determined the critical doses and thickness contrast of the hybrid materials at various electron energies (up to 400 eV). The custom-built in-situ Fourier-Transform Infrared (FTIR) spectroscopy system, equipped with an electron flood gun and gas residual analyzer (RGA), was employed to monitor the chemical changes induced by low-energy electrons in the hybrid thin films. Based on the in-situ FTIR and RGA results, potential chemical reaction mechanisms responsible for the change in solubility of the TMA/HQ material are proposed.",

keywords = "extreme ultraviolet lithography (EUVL), hybrid resists, low-energy electron beam lithography (EBL), molecular atomic layer deposition (MALD), vapor phase deposition",

author = "Le, \{Dan N.\} and Hwang, \{Su Min\} and Jihoon Woo and Seungsoo Choi and Taehee Park and Veyan, \{Jean Francois\} and Nikhil Tiwale and Ashwanth Subramanian and Lee, \{Won Il\} and Nam, \{Chang Yong\} and Rino Choi and Jiyoung Kim",

note = "Publisher Copyright: {\textcopyright} 2022 SPIE.; International Conference on Extreme Ultraviolet Lithography 2022 ; Conference date: 26-09-2022 Through 29-09-2022",

year = "2022",

doi = "10.1117/12.2641647",

language = "English",

series = "Proceedings of SPIE - The International Society for Optical Engineering",

publisher = "SPIE",

editor = "Toshiro Itani and Naulleau, \{Patrick P.\} and Gargini, \{Paolo A.\} and Ronse, \{Kurt G.\}",

booktitle = "International Conference on Extreme Ultraviolet Lithography 2022",

}

Le, DN, Hwang, SM, Woo, J, Choi, S, Park, T, Veyan, JF, Tiwale, N, Subramanian, A, Lee, WI, Nam, CY, Choi, R & Kim, J 2022, Chemical reactions induced by low-energy electron exposure on a novel inorganic-organic hybrid dry EUV photoresist deposited by molecular atomic layer deposition (MALD). in T Itani, PP Naulleau, PA Gargini & KG Ronse (eds), International Conference on Extreme Ultraviolet Lithography 2022., 1229205, Proceedings of SPIE - The International Society for Optical Engineering, vol. 12292, SPIE, International Conference on Extreme Ultraviolet Lithography 2022, Monterey, United States, 09/26/22. https://doi.org/10.1117/12.2641647

Chemical reactions induced by low-energy electron exposure on a novel inorganic-organic hybrid dry EUV photoresist deposited by molecular atomic layer deposition (MALD). / Le, Dan N.; Hwang, Su Min; Woo, Jihoon et al.
International Conference on Extreme Ultraviolet Lithography 2022. ed. / Toshiro Itani; Patrick P. Naulleau; Paolo A. Gargini; Kurt G. Ronse. SPIE, 2022. 1229205 (Proceedings of SPIE - The International Society for Optical Engineering; Vol. 12292).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - Chemical reactions induced by low-energy electron exposure on a novel inorganic-organic hybrid dry EUV photoresist deposited by molecular atomic layer deposition (MALD)

AU - Le, Dan N.

AU - Hwang, Su Min

AU - Woo, Jihoon

AU - Choi, Seungsoo

AU - Park, Taehee

AU - Veyan, Jean Francois

AU - Tiwale, Nikhil

AU - Subramanian, Ashwanth

AU - Lee, Won Il

AU - Nam, Chang Yong

AU - Choi, Rino

AU - Kim, Jiyoung

PY - 2022

Y1 - 2022

N2 - Herein, we investigated the chemical reactions associated with low-energy electron exposures on an inorganic-organic hybrid thin film system deposited using molecular atomic layer deposition (MALD) for EUV photoresist applications. Using the hybrid thin films consisting of trimethylaluminum (TMA) and hydroquinone (HQ), we determined the critical doses and thickness contrast of the hybrid materials at various electron energies (up to 400 eV). The custom-built in-situ Fourier-Transform Infrared (FTIR) spectroscopy system, equipped with an electron flood gun and gas residual analyzer (RGA), was employed to monitor the chemical changes induced by low-energy electrons in the hybrid thin films. Based on the in-situ FTIR and RGA results, potential chemical reaction mechanisms responsible for the change in solubility of the TMA/HQ material are proposed.

AB - Herein, we investigated the chemical reactions associated with low-energy electron exposures on an inorganic-organic hybrid thin film system deposited using molecular atomic layer deposition (MALD) for EUV photoresist applications. Using the hybrid thin films consisting of trimethylaluminum (TMA) and hydroquinone (HQ), we determined the critical doses and thickness contrast of the hybrid materials at various electron energies (up to 400 eV). The custom-built in-situ Fourier-Transform Infrared (FTIR) spectroscopy system, equipped with an electron flood gun and gas residual analyzer (RGA), was employed to monitor the chemical changes induced by low-energy electrons in the hybrid thin films. Based on the in-situ FTIR and RGA results, potential chemical reaction mechanisms responsible for the change in solubility of the TMA/HQ material are proposed.

KW - extreme ultraviolet lithography (EUVL)

KW - hybrid resists

KW - low-energy electron beam lithography (EBL)

KW - molecular atomic layer deposition (MALD)

KW - vapor phase deposition

UR - https://www.scopus.com/pages/publications/85145435895

U2 - 10.1117/12.2641647

DO - 10.1117/12.2641647

M3 - Conference contribution

AN - SCOPUS:85145435895

T3 - Proceedings of SPIE - The International Society for Optical Engineering

BT - International Conference on Extreme Ultraviolet Lithography 2022

A2 - Itani, Toshiro

A2 - Naulleau, Patrick P.

A2 - Gargini, Paolo A.

A2 - Ronse, Kurt G.

PB - SPIE

T2 - International Conference on Extreme Ultraviolet Lithography 2022

Y2 - 26 September 2022 through 29 September 2022

ER -

Le DN, Hwang SM, Woo J, Choi S, Park T, Veyan JF et al. Chemical reactions induced by low-energy electron exposure on a novel inorganic-organic hybrid dry EUV photoresist deposited by molecular atomic layer deposition (MALD). In Itani T, Naulleau PP, Gargini PA, Ronse KG, editors, International Conference on Extreme Ultraviolet Lithography 2022. SPIE. 2022. 1229205. (Proceedings of SPIE - The International Society for Optical Engineering). doi: 10.1117/12.2641647

Chemical reactions induced by low-energy electron exposure on a novel inorganic-organic hybrid dry EUV photoresist deposited by molecular atomic layer deposition (MALD)

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