Chemical vapor deposition and defect characterization of silicon carbide epitaxial films

Yi Chen; Govindhan Dhanaraj; Hui Chen; William Vetter; Michael Dudley; Hui Zhang

Chemical vapor deposition and defect characterization of silicon carbide epitaxial films

Yi Chen
, Govindhan Dhanaraj
, Hui Chen
, William Vetter
, Michael Dudley
, Hui Zhang

Materials Science and Engineering

Stony Brook University

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

1 Scopus citations

Abstract

SiC homo-epitaxial layers have been grown using a halide chemical vapor deposition (HCVD) process. The thermodynamic process of SiC CVD in SiCl ₄-C ₃H ₈-H ₂ gas system was studied using equilibrium model. The predicted growth rate decreases gradually with the increase in growth temperature, and this trend is consistent with our experimental results. Good quality epitaxial layers with low density of basal plane dislocations could be grown. Some elementary screw dislocations present in the substrate do not seem to be propagating into the epitaxial layer.

Original language	English
Title of host publication	Progress in Semiconductor Materials V - Novel Materials and Electronic and Optoelectronic Applications
Pages	591-596
Number of pages	6
State	Published - 2006
Event	2005 MRS Fall Meeting - Boston, MA, United States Duration: Nov 28 2005 → Dec 2 2005

Publication series

Name	Materials Research Society Symposium Proceedings
Volume	891
ISSN (Print)	0272-9172

Conference

Conference	2005 MRS Fall Meeting
Country/Territory	United States
City	Boston, MA
Period	11/28/05 → 12/2/05

Cite this

@inproceedings{ad460a272637402fae6eb1f7b1eb1480,

title = "Chemical vapor deposition and defect characterization of silicon carbide epitaxial films",

abstract = "SiC homo-epitaxial layers have been grown using a halide chemical vapor deposition (HCVD) process. The thermodynamic process of SiC CVD in SiCl 4-C 3H 8-H 2 gas system was studied using equilibrium model. The predicted growth rate decreases gradually with the increase in growth temperature, and this trend is consistent with our experimental results. Good quality epitaxial layers with low density of basal plane dislocations could be grown. Some elementary screw dislocations present in the substrate do not seem to be propagating into the epitaxial layer.",

author = "Yi Chen and Govindhan Dhanaraj and Hui Chen and William Vetter and Michael Dudley and Hui Zhang",

year = "2006",

language = "English",

isbn = "1558998454",

series = "Materials Research Society Symposium Proceedings",

pages = "591--596",

booktitle = "Progress in Semiconductor Materials V - Novel Materials and Electronic and Optoelectronic Applications",

note = "2005 MRS Fall Meeting ; Conference date: 28-11-2005 Through 02-12-2005",

}

Chen, Y, Dhanaraj, G, Chen, H, Vetter, W, Dudley, M & Zhang, H 2006, Chemical vapor deposition and defect characterization of silicon carbide epitaxial films. in Progress in Semiconductor Materials V - Novel Materials and Electronic and Optoelectronic Applications. Materials Research Society Symposium Proceedings, vol. 891, pp. 591-596, 2005 MRS Fall Meeting, Boston, MA, United States, 11/28/05.

Chemical vapor deposition and defect characterization of silicon carbide epitaxial films. / Chen, Yi; Dhanaraj, Govindhan; Chen, Hui et al.
Progress in Semiconductor Materials V - Novel Materials and Electronic and Optoelectronic Applications. 2006. p. 591-596 (Materials Research Society Symposium Proceedings; Vol. 891).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - Chemical vapor deposition and defect characterization of silicon carbide epitaxial films

AU - Chen, Yi

AU - Dhanaraj, Govindhan

AU - Chen, Hui

AU - Vetter, William

AU - Dudley, Michael

AU - Zhang, Hui

PY - 2006

Y1 - 2006

N2 - SiC homo-epitaxial layers have been grown using a halide chemical vapor deposition (HCVD) process. The thermodynamic process of SiC CVD in SiCl 4-C 3H 8-H 2 gas system was studied using equilibrium model. The predicted growth rate decreases gradually with the increase in growth temperature, and this trend is consistent with our experimental results. Good quality epitaxial layers with low density of basal plane dislocations could be grown. Some elementary screw dislocations present in the substrate do not seem to be propagating into the epitaxial layer.

AB - SiC homo-epitaxial layers have been grown using a halide chemical vapor deposition (HCVD) process. The thermodynamic process of SiC CVD in SiCl 4-C 3H 8-H 2 gas system was studied using equilibrium model. The predicted growth rate decreases gradually with the increase in growth temperature, and this trend is consistent with our experimental results. Good quality epitaxial layers with low density of basal plane dislocations could be grown. Some elementary screw dislocations present in the substrate do not seem to be propagating into the epitaxial layer.

UR - https://www.scopus.com/pages/publications/33747497682

M3 - Conference contribution

AN - SCOPUS:33747497682

SN - 1558998454

SN - 9781558998452

T3 - Materials Research Society Symposium Proceedings

SP - 591

EP - 596

BT - Progress in Semiconductor Materials V - Novel Materials and Electronic and Optoelectronic Applications

T2 - 2005 MRS Fall Meeting

Y2 - 28 November 2005 through 2 December 2005

ER -

Chemical vapor deposition and defect characterization of silicon carbide epitaxial films

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