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Co-Design Framework for High Power, Medium-/High-Voltage WBG Power Modules: Case Study with 3.3-kV/200-A Wire-Bonded Low-Inductance SiC Half-Bridge Module

  • Yang Li
  • , Shiyue Deng
  • , Yuxuan Wu
  • , Mustafeez-Ul-Hassan
  • , Yang Xie
  • , Abdul Basit Mirza
  • , Deepi Singh
  • , Fang Luo
  • , Amol Deshpande
  • , Jack Flicker
  • Stony Brook University
  • Eaton Corporation
  • University of Arkansas, Fayetteville
  • Wolfspeed, Inc.
  • Sandia National Laboratories, New Mexico

Research output: Contribution to journalArticlepeer-review

3 Scopus citations

Abstract

This article proposed a co-design framework for high power high-voltage wide bandgap (WBG) power module packaging that is generalized to reflect diverse design requirements across device technologies, packaging configurations, and voltage classes. Beyond the commonly addressed thermal, electrical, and mechanical multidisciplinary co-optimization, the proposed framework specially emphasizes considerations for medium-/high-voltage (MV/HV) designs, introduces the concept of packaging and assembly process development kit (PA-PDK), and integrates 'Design for Reliability (DfR)' in the development process for power module packaging. The effectiveness of the co-design framework is validated through a case study with a 3.3-kV/200-A wire-bonded, low-inductance, silicon carbide (SiC) half-bridge module, which serves as a reference for the implementation of such a co-design framework.

Original languageEnglish
Pages (from-to)2463-2480
Number of pages18
JournalIEEE Journal of Emerging and Selected Topics in Power Electronics
Volume14
Issue number2
DOIs
StatePublished - Apr 1 2026

Keywords

  • 33 kV
  • co-design framework
  • design for reliability (DfR)
  • design procedures
  • packaging and assembly process development kit (PA-PDK)
  • power module packaging

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