Combined Bloch/SET oscillations in 1D arrays of small tunnel junctions

A. N. Korotkov; D. V. Averin; K. K. Likharev

doi:10.1016/0921-4526(94)90996-2

Combined Bloch/SET oscillations in 1D arrays of small tunnel junctions

A. N. Korotkov
, D. V. Averin
, K. K. Likharev

Physics and Astronomy

Stony Brook University
Lomonosov Moscow State University

Research output: Contribution to journal › Article › peer-review

1 Scopus citations

Abstract

At sufficiently low temperatures, 1D arrays of ultrasmall tunnel junctions with low electron scattering rate (for example, semiconductor superlattices) may exhibit a new type of electron transfer. This process can be considered as fast "Bloch" oscillations with frequency f_B= ε h (where ε is the electron energy change due to tunneling through one tunnel barrier), modulated with lower "SET" frequency f_S= I e (where I is the dc electric current through the array).

Original language	English
Pages (from-to)	1333-1334
Number of pages	2
Journal	Physica B: Condensed Matter
Volume	194-196
Issue number	PART 1
DOIs	https://doi.org/10.1016/0921-4526(94)90996-2
State	Published - Feb 2 1994

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title = "Combined Bloch/SET oscillations in 1D arrays of small tunnel junctions",

abstract = "At sufficiently low temperatures, 1D arrays of ultrasmall tunnel junctions with low electron scattering rate (for example, semiconductor superlattices) may exhibit a new type of electron transfer. This process can be considered as fast {"}Bloch{"} oscillations with frequency fB= ε h (where ε is the electron energy change due to tunneling through one tunnel barrier), modulated with lower {"}SET{"} frequency fS= I e (where I is the dc electric current through the array).",

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AU - Averin, D. V.

AU - Likharev, K. K.

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N2 - At sufficiently low temperatures, 1D arrays of ultrasmall tunnel junctions with low electron scattering rate (for example, semiconductor superlattices) may exhibit a new type of electron transfer. This process can be considered as fast "Bloch" oscillations with frequency fB= ε h (where ε is the electron energy change due to tunneling through one tunnel barrier), modulated with lower "SET" frequency fS= I e (where I is the dc electric current through the array).

AB - At sufficiently low temperatures, 1D arrays of ultrasmall tunnel junctions with low electron scattering rate (for example, semiconductor superlattices) may exhibit a new type of electron transfer. This process can be considered as fast "Bloch" oscillations with frequency fB= ε h (where ε is the electron energy change due to tunneling through one tunnel barrier), modulated with lower "SET" frequency fS= I e (where I is the dc electric current through the array).

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DO - 10.1016/0921-4526(94)90996-2

M3 - Article

AN - SCOPUS:0028759612

SN - 0921-4526

VL - 194-196

SP - 1333

EP - 1334

JO - Physica B: Condensed Matter

JF - Physica B: Condensed Matter

IS - PART 1

ER -

Combined Bloch/SET oscillations in 1D arrays of small tunnel junctions

Abstract

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