Comprehensive model for high pressure growth of InP crystals

Y. F. Zou; T. Zhang; E. Nunes; H. Zhang; V. Prasad; F. Ladeinde; M. Naraghi; A. Anselmo; D. F. Bliss; K. P. Gupta

Comprehensive model for high pressure growth of InP crystals

Y. F. Zou
, T. Zhang
, E. Nunes
, H. Zhang
, V. Prasad
, F. Ladeinde
, M. Naraghi
, A. Anselmo
, D. F. Bliss
, K. P. Gupta

Mechanical Engineering

Stony Brook University

Research output: Contribution to journal › Conference article › peer-review

1 Scopus citations

Abstract

Various numerical simulations for liquid encapsulated Czochralski (LEC) growth have been performed for many different process conditions, but they have generally neglected convective flows in the gas. A comprehensive model has been developed to account for oscillatory, laminar and turbulent flows caused by buoyancy and surface tension forces; forced convection due to crucible and crystal rotations; and complex thermal boundary conditions. The model also accounts for magnetohydrodynamics and sophisticated radiation heat exchange. Thermal elastic stress in the crystal is simultaneously calculated using the temperature distribution and crystal/metal interface shape obtained from the thermal transport simulation.

Original language	English
Pages (from-to)	39-42
Number of pages	4
Journal	Conference Proceedings - International Conference on Indium Phosphide and Related Materials
State	Published - 1996
Event	Proceedings of the 1996 8th International Conference on Indium Phosphide and Related Materials - Schwabisch Gmund, Ger Duration: Apr 21 1996 → Apr 25 1996

Cite this

@article{225f8cd9c22d4e788d273693b848c01f,

title = "Comprehensive model for high pressure growth of InP crystals",

abstract = "Various numerical simulations for liquid encapsulated Czochralski (LEC) growth have been performed for many different process conditions, but they have generally neglected convective flows in the gas. A comprehensive model has been developed to account for oscillatory, laminar and turbulent flows caused by buoyancy and surface tension forces; forced convection due to crucible and crystal rotations; and complex thermal boundary conditions. The model also accounts for magnetohydrodynamics and sophisticated radiation heat exchange. Thermal elastic stress in the crystal is simultaneously calculated using the temperature distribution and crystal/metal interface shape obtained from the thermal transport simulation.",

author = "Zou, \{Y. F.\} and T. Zhang and E. Nunes and H. Zhang and V. Prasad and F. Ladeinde and M. Naraghi and A. Anselmo and Bliss, \{D. F.\} and Gupta, \{K. P.\}",

year = "1996",

language = "English",

pages = "39--42",

journal = "Conference Proceedings - International Conference on Indium Phosphide and Related Materials",

issn = "1092-8669",

note = "Proceedings of the 1996 8th International Conference on Indium Phosphide and Related Materials ; Conference date: 21-04-1996 Through 25-04-1996",

}

TY - JOUR

T1 - Comprehensive model for high pressure growth of InP crystals

AU - Zou, Y. F.

AU - Zhang, T.

AU - Nunes, E.

AU - Zhang, H.

AU - Prasad, V.

AU - Ladeinde, F.

AU - Naraghi, M.

AU - Anselmo, A.

AU - Bliss, D. F.

AU - Gupta, K. P.

PY - 1996

Y1 - 1996

N2 - Various numerical simulations for liquid encapsulated Czochralski (LEC) growth have been performed for many different process conditions, but they have generally neglected convective flows in the gas. A comprehensive model has been developed to account for oscillatory, laminar and turbulent flows caused by buoyancy and surface tension forces; forced convection due to crucible and crystal rotations; and complex thermal boundary conditions. The model also accounts for magnetohydrodynamics and sophisticated radiation heat exchange. Thermal elastic stress in the crystal is simultaneously calculated using the temperature distribution and crystal/metal interface shape obtained from the thermal transport simulation.

AB - Various numerical simulations for liquid encapsulated Czochralski (LEC) growth have been performed for many different process conditions, but they have generally neglected convective flows in the gas. A comprehensive model has been developed to account for oscillatory, laminar and turbulent flows caused by buoyancy and surface tension forces; forced convection due to crucible and crystal rotations; and complex thermal boundary conditions. The model also accounts for magnetohydrodynamics and sophisticated radiation heat exchange. Thermal elastic stress in the crystal is simultaneously calculated using the temperature distribution and crystal/metal interface shape obtained from the thermal transport simulation.

UR - https://www.scopus.com/pages/publications/0029718052

M3 - Conference article

AN - SCOPUS:0029718052

SN - 1092-8669

SP - 39

EP - 42

JO - Conference Proceedings - International Conference on Indium Phosphide and Related Materials

JF - Conference Proceedings - International Conference on Indium Phosphide and Related Materials

T2 - Proceedings of the 1996 8th International Conference on Indium Phosphide and Related Materials

Y2 - 21 April 1996 through 25 April 1996

ER -

Comprehensive model for high pressure growth of InP crystals

Abstract

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