Correlation of EBIC and SWBXT imaged defects and epilayer growth pits in 6H-SiC schottky diodes

C. M. Schnabel; M. Tabib-Azar; P. G. Neudeck; S. G. Bailey; H. B. Su; M. Dudley; R. P. Raffaelle

Correlation of EBIC and SWBXT imaged defects and epilayer growth pits in 6H-SiC schottky diodes

C. M. Schnabel
, M. Tabib-Azar
, P. G. Neudeck
, S. G. Bailey
, H. B. Su
, M. Dudley
, R. P. Raffaelle

Materials Science and Engineering

Case Western Reserve University
NASA Glenn Research Center
Stony Brook University
Rochester Institute of Technology

Research output: Contribution to journal › Article › peer-review

Abstract

We show the first direct experimental correlation between the presence of closed core screw dislocations in 6H-SiC epilayers with recombination centers, as well as with some of the small growth pits on the epilayer surface in lightly-doped 6H-SiC Schottky diodes. At every SWBXT-identified closed core screw dislocation, an EBIC image showed a dark spot indicating a recombination center, and Nomarski optical microscope and Atomic Force Microscope (AFM) images showed a corresponding small growth pit with a sharp apex on the surface of the epilayer.

Original language	English
Pages (from-to)	1-4
Number of pages	4
Journal	NASA Technical Memorandum
Issue number	209648
State	Published - 2000

Cite this

@article{0ec9316913924431a143ca60f762aa58,

title = "Correlation of EBIC and SWBXT imaged defects and epilayer growth pits in 6H-SiC schottky diodes",

abstract = "We show the first direct experimental correlation between the presence of closed core screw dislocations in 6H-SiC epilayers with recombination centers, as well as with some of the small growth pits on the epilayer surface in lightly-doped 6H-SiC Schottky diodes. At every SWBXT-identified closed core screw dislocation, an EBIC image showed a dark spot indicating a recombination center, and Nomarski optical microscope and Atomic Force Microscope (AFM) images showed a corresponding small growth pit with a sharp apex on the surface of the epilayer.",

author = "Schnabel, \{C. M.\} and M. Tabib-Azar and Neudeck, \{P. G.\} and Bailey, \{S. G.\} and Su, \{H. B.\} and M. Dudley and Raffaelle, \{R. P.\}",

year = "2000",

language = "English",

pages = "1--4",

journal = "NASA Technical Memorandum",

issn = "0499-9320",

number = "209648",

}

TY - JOUR

T1 - Correlation of EBIC and SWBXT imaged defects and epilayer growth pits in 6H-SiC schottky diodes

AU - Schnabel, C. M.

AU - Tabib-Azar, M.

AU - Neudeck, P. G.

AU - Bailey, S. G.

AU - Su, H. B.

AU - Dudley, M.

AU - Raffaelle, R. P.

PY - 2000

Y1 - 2000

N2 - We show the first direct experimental correlation between the presence of closed core screw dislocations in 6H-SiC epilayers with recombination centers, as well as with some of the small growth pits on the epilayer surface in lightly-doped 6H-SiC Schottky diodes. At every SWBXT-identified closed core screw dislocation, an EBIC image showed a dark spot indicating a recombination center, and Nomarski optical microscope and Atomic Force Microscope (AFM) images showed a corresponding small growth pit with a sharp apex on the surface of the epilayer.

AB - We show the first direct experimental correlation between the presence of closed core screw dislocations in 6H-SiC epilayers with recombination centers, as well as with some of the small growth pits on the epilayer surface in lightly-doped 6H-SiC Schottky diodes. At every SWBXT-identified closed core screw dislocation, an EBIC image showed a dark spot indicating a recombination center, and Nomarski optical microscope and Atomic Force Microscope (AFM) images showed a corresponding small growth pit with a sharp apex on the surface of the epilayer.

UR - https://www.scopus.com/pages/publications/13344270962

M3 - Article

AN - SCOPUS:13344270962

SN - 0499-9320

SP - 1

EP - 4

JO - NASA Technical Memorandum

JF - NASA Technical Memorandum

IS - 209648

ER -

Correlation of EBIC and SWBXT imaged defects and epilayer growth pits in 6H-SiC schottky diodes

Abstract

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