Correlation of EBIC and SWBXT imaged defects and epilayer growth pits in 6H-SiC Schottky diodes

C. M. Schnabel; M. Tabib-Azar; P. G. Neudeck; S. G. Bailey; H. B. Su; M. Dudley; R. P. Raffaelle

Correlation of EBIC and SWBXT imaged defects and epilayer growth pits in 6H-SiC Schottky diodes

C. M. Schnabel
, M. Tabib-Azar
, P. G. Neudeck
, S. G. Bailey
, H. B. Su
, M. Dudley
, R. P. Raffaelle

Materials Science and Engineering

Case Western Reserve University
NASA Glenn Research Center
Stony Brook University
Rochester Institute of Technology

Research output: Contribution to journal › Conference article › peer-review

19 Scopus citations

Abstract

We show the first direct experimental correlation between the presence of closed core screw dislocations in 6H-SiC epilayers with recombination centers, as well as with some of the small growth pits on the epilayer surface in lightly-doped 6H-SiC Schottky diodes. At every SWBXT-identified closed core screw dislocation, an EBIC image showed a dark spot indicating a recombination center, and Nomarski optical microscope and Atomic Force Microscope (AFM) images showed a corresponding small growth pit with a sharp apex on the surface of the epilayer.

Original language	English
Pages (from-to)	I/-
Journal	Materials Science Forum
Volume	338
State	Published - 2000
Event	ICSCRM '99: The International Conference on Silicon Carbide and Related Materials - Research Triangle Park, NC, USA Duration: Oct 10 1999 → Oct 15 1999

Cite this

@article{1cb3a06df8814309888791ab8b0dbbaa,

title = "Correlation of EBIC and SWBXT imaged defects and epilayer growth pits in 6H-SiC Schottky diodes",

abstract = "We show the first direct experimental correlation between the presence of closed core screw dislocations in 6H-SiC epilayers with recombination centers, as well as with some of the small growth pits on the epilayer surface in lightly-doped 6H-SiC Schottky diodes. At every SWBXT-identified closed core screw dislocation, an EBIC image showed a dark spot indicating a recombination center, and Nomarski optical microscope and Atomic Force Microscope (AFM) images showed a corresponding small growth pit with a sharp apex on the surface of the epilayer.",

author = "Schnabel, \{C. M.\} and M. Tabib-Azar and Neudeck, \{P. G.\} and Bailey, \{S. G.\} and Su, \{H. B.\} and M. Dudley and Raffaelle, \{R. P.\}",

year = "2000",

language = "English",

volume = "338",

pages = "I/--",

journal = "Materials Science Forum",

issn = "0255-5476",

note = "ICSCRM '99: The International Conference on Silicon Carbide and Related Materials ; Conference date: 10-10-1999 Through 15-10-1999",

}

TY - JOUR

T1 - Correlation of EBIC and SWBXT imaged defects and epilayer growth pits in 6H-SiC Schottky diodes

AU - Schnabel, C. M.

AU - Tabib-Azar, M.

AU - Neudeck, P. G.

AU - Bailey, S. G.

AU - Su, H. B.

AU - Dudley, M.

AU - Raffaelle, R. P.

PY - 2000

Y1 - 2000

N2 - We show the first direct experimental correlation between the presence of closed core screw dislocations in 6H-SiC epilayers with recombination centers, as well as with some of the small growth pits on the epilayer surface in lightly-doped 6H-SiC Schottky diodes. At every SWBXT-identified closed core screw dislocation, an EBIC image showed a dark spot indicating a recombination center, and Nomarski optical microscope and Atomic Force Microscope (AFM) images showed a corresponding small growth pit with a sharp apex on the surface of the epilayer.

AB - We show the first direct experimental correlation between the presence of closed core screw dislocations in 6H-SiC epilayers with recombination centers, as well as with some of the small growth pits on the epilayer surface in lightly-doped 6H-SiC Schottky diodes. At every SWBXT-identified closed core screw dislocation, an EBIC image showed a dark spot indicating a recombination center, and Nomarski optical microscope and Atomic Force Microscope (AFM) images showed a corresponding small growth pit with a sharp apex on the surface of the epilayer.

UR - https://www.scopus.com/pages/publications/0033704290

M3 - Conference article

AN - SCOPUS:0033704290

SN - 0255-5476

VL - 338

SP - I/-

JO - Materials Science Forum

JF - Materials Science Forum

T2 - ICSCRM '99: The International Conference on Silicon Carbide and Related Materials

Y2 - 10 October 1999 through 15 October 1999

ER -

Correlation of EBIC and SWBXT imaged defects and epilayer growth pits in 6H-SiC Schottky diodes

Abstract

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