Correlation of lifetime mapping of 4H-SiC epilayers with structural defects using synchrotron X-ray topography

O. Y. Goue; Y. Yang; J. Guo; B. Raghothamachar; M. Dudley; J. L. Hosteller; R. L. Myers Ward; P. B. Klein; D. K. Gaskill

doi:10.4028/www.scientific.net/MSF.858.297

Correlation of lifetime mapping of 4H-SiC epilayers with structural defects using synchrotron X-ray topography

O. Y. Goue
, Y. Yang
, J. Guo
, B. Raghothamachar
, M. Dudley
, J. L. Hosteller
, R. L. Myers Ward
, P. B. Klein
, D. K. Gaskill

Materials Science and Engineering

Stony Brook University
United Silicon Carbide, Inc.
Naval Research Laboratory
KeyW Corporation

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

1 Scopus citations

Abstract

Lifetime maps for two 4H-SiC epi-wafers (samples 1 and 2) were recorded using microwave photoconductive decay (μPCD) measurements and correlated with the type and distribution of structural defects mapped by synchrotron X-ray topography (white beam and monochromatic). Sample 1 showed lower lifetime inside one of its higher doped facet regions and along its edges. The low lifetime in the facet region was associated with the presence of a high density of multi-layered Shockley stacking faults (SFs) and low angle grain boundaries (LAGBs). These stacking faults are likely double Shockley stacking faults (DSSFs) and probably nucleated from scratches present on the substrate surface and LAGBs present in that region, propagating during epilayer growth. In contrast, sample 2 showed a reduced carrier lifetime in the middle region associated with a network of interfacial dislocations (IDs) and half loop arrays (HLAs) originating from 3C inclusions that are generated during epilayer growth. Along the edges of both samples, overlapping triangular defects, microcracks and BPD loops lowered lifetime.

Original language	English
Title of host publication	Silicon Carbide and Related Materials 2015
Editors	Fabrizio Roccaforte, Filippo Giannazzo, Francesco La Via, Roberta Nipoti, Danilo Crippa, Mario Saggio
Publisher	Trans Tech Publications Ltd
Pages	297-300
Number of pages	4
ISBN (Print)	9783035710427
DOIs	https://doi.org/10.4028/www.scientific.net/MSF.858.297
State	Published - 2016
Event	16th International Conference on Silicon Carbide and Related Materials, ICSCRM 2015 - Sicily, Italy Duration: Oct 4 2015 → Oct 9 2015

Publication series

Name	Materials Science Forum
Volume	858
ISSN (Print)	0255-5476
ISSN (Electronic)	1662-9752

Conference

Conference	16th International Conference on Silicon Carbide and Related Materials, ICSCRM 2015
Country/Territory	Italy
City	Sicily
Period	10/4/15 → 10/9/15

Keywords

Grain boundaries interfacial dislocation and half loop array
Lifetime map
Minority carriers
Morphological defects
SMBXT
Stacking faults
SWBXT

Access to Document

10.4028/www.scientific.net/MSF.858.297

Cite this

Goue, O. Y., Yang, Y., Guo, J., Raghothamachar, B., Dudley, M., Hosteller, J. L., Myers Ward, R. L., Klein, P. B., & Gaskill, D. K. (2016). Correlation of lifetime mapping of 4H-SiC epilayers with structural defects using synchrotron X-ray topography. In F. Roccaforte, F. Giannazzo, F. La Via, R. Nipoti, D. Crippa, & M. Saggio (Eds.), Silicon Carbide and Related Materials 2015 (pp. 297-300). (Materials Science Forum; Vol. 858). Trans Tech Publications Ltd. https://doi.org/10.4028/www.scientific.net/MSF.858.297

Goue, O. Y. ; Yang, Y. ; Guo, J. et al. / Correlation of lifetime mapping of 4H-SiC epilayers with structural defects using synchrotron X-ray topography. Silicon Carbide and Related Materials 2015. editor / Fabrizio Roccaforte ; Filippo Giannazzo ; Francesco La Via ; Roberta Nipoti ; Danilo Crippa ; Mario Saggio. Trans Tech Publications Ltd, 2016. pp. 297-300 (Materials Science Forum).

@inproceedings{d0c537b2365b445ab0be4bafc8a77546,

title = "Correlation of lifetime mapping of 4H-SiC epilayers with structural defects using synchrotron X-ray topography",

abstract = "Lifetime maps for two 4H-SiC epi-wafers (samples 1 and 2) were recorded using microwave photoconductive decay (μPCD) measurements and correlated with the type and distribution of structural defects mapped by synchrotron X-ray topography (white beam and monochromatic). Sample 1 showed lower lifetime inside one of its higher doped facet regions and along its edges. The low lifetime in the facet region was associated with the presence of a high density of multi-layered Shockley stacking faults (SFs) and low angle grain boundaries (LAGBs). These stacking faults are likely double Shockley stacking faults (DSSFs) and probably nucleated from scratches present on the substrate surface and LAGBs present in that region, propagating during epilayer growth. In contrast, sample 2 showed a reduced carrier lifetime in the middle region associated with a network of interfacial dislocations (IDs) and half loop arrays (HLAs) originating from 3C inclusions that are generated during epilayer growth. Along the edges of both samples, overlapping triangular defects, microcracks and BPD loops lowered lifetime.",

keywords = "Grain boundaries interfacial dislocation and half loop array, Lifetime map, Minority carriers, Morphological defects, SMBXT, Stacking faults, SWBXT",

author = "Goue, \{O. Y.\} and Y. Yang and J. Guo and B. Raghothamachar and M. Dudley and Hosteller, \{J. L.\} and \{Myers Ward\}, \{R. L.\} and Klein, \{P. B.\} and Gaskill, \{D. K.\}",

note = "Publisher Copyright: {\textcopyright} 2016 Trans Tech Publications, Switzerland.; 16th International Conference on Silicon Carbide and Related Materials, ICSCRM 2015 ; Conference date: 04-10-2015 Through 09-10-2015",

year = "2016",

doi = "10.4028/www.scientific.net/MSF.858.297",

language = "English",

isbn = "9783035710427",

series = "Materials Science Forum",

publisher = "Trans Tech Publications Ltd",

pages = "297--300",

editor = "Fabrizio Roccaforte and Filippo Giannazzo and \{La Via\}, Francesco and Roberta Nipoti and Danilo Crippa and Mario Saggio",

booktitle = "Silicon Carbide and Related Materials 2015",

}

Goue, OY, Yang, Y, Guo, J, Raghothamachar, B , Dudley, M, Hosteller, JL, Myers Ward, RL, Klein, PB & Gaskill, DK 2016, Correlation of lifetime mapping of 4H-SiC epilayers with structural defects using synchrotron X-ray topography. in F Roccaforte, F Giannazzo, F La Via, R Nipoti, D Crippa & M Saggio (eds), Silicon Carbide and Related Materials 2015. Materials Science Forum, vol. 858, Trans Tech Publications Ltd, pp. 297-300, 16th International Conference on Silicon Carbide and Related Materials, ICSCRM 2015, Sicily, Italy, 10/4/15. https://doi.org/10.4028/www.scientific.net/MSF.858.297

Correlation of lifetime mapping of 4H-SiC epilayers with structural defects using synchrotron X-ray topography. / Goue, O. Y.; Yang, Y.; Guo, J. et al.
Silicon Carbide and Related Materials 2015. ed. / Fabrizio Roccaforte; Filippo Giannazzo; Francesco La Via; Roberta Nipoti; Danilo Crippa; Mario Saggio. Trans Tech Publications Ltd, 2016. p. 297-300 (Materials Science Forum; Vol. 858).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - Correlation of lifetime mapping of 4H-SiC epilayers with structural defects using synchrotron X-ray topography

AU - Goue, O. Y.

AU - Yang, Y.

AU - Guo, J.

AU - Raghothamachar, B.

AU - Dudley, M.

AU - Hosteller, J. L.

AU - Myers Ward, R. L.

AU - Klein, P. B.

AU - Gaskill, D. K.

PY - 2016

Y1 - 2016

N2 - Lifetime maps for two 4H-SiC epi-wafers (samples 1 and 2) were recorded using microwave photoconductive decay (μPCD) measurements and correlated with the type and distribution of structural defects mapped by synchrotron X-ray topography (white beam and monochromatic). Sample 1 showed lower lifetime inside one of its higher doped facet regions and along its edges. The low lifetime in the facet region was associated with the presence of a high density of multi-layered Shockley stacking faults (SFs) and low angle grain boundaries (LAGBs). These stacking faults are likely double Shockley stacking faults (DSSFs) and probably nucleated from scratches present on the substrate surface and LAGBs present in that region, propagating during epilayer growth. In contrast, sample 2 showed a reduced carrier lifetime in the middle region associated with a network of interfacial dislocations (IDs) and half loop arrays (HLAs) originating from 3C inclusions that are generated during epilayer growth. Along the edges of both samples, overlapping triangular defects, microcracks and BPD loops lowered lifetime.

AB - Lifetime maps for two 4H-SiC epi-wafers (samples 1 and 2) were recorded using microwave photoconductive decay (μPCD) measurements and correlated with the type and distribution of structural defects mapped by synchrotron X-ray topography (white beam and monochromatic). Sample 1 showed lower lifetime inside one of its higher doped facet regions and along its edges. The low lifetime in the facet region was associated with the presence of a high density of multi-layered Shockley stacking faults (SFs) and low angle grain boundaries (LAGBs). These stacking faults are likely double Shockley stacking faults (DSSFs) and probably nucleated from scratches present on the substrate surface and LAGBs present in that region, propagating during epilayer growth. In contrast, sample 2 showed a reduced carrier lifetime in the middle region associated with a network of interfacial dislocations (IDs) and half loop arrays (HLAs) originating from 3C inclusions that are generated during epilayer growth. Along the edges of both samples, overlapping triangular defects, microcracks and BPD loops lowered lifetime.

KW - Grain boundaries interfacial dislocation and half loop array

KW - Lifetime map

KW - Minority carriers

KW - Morphological defects

KW - SMBXT

KW - Stacking faults

KW - SWBXT

UR - https://www.scopus.com/pages/publications/84971505261

U2 - 10.4028/www.scientific.net/MSF.858.297

DO - 10.4028/www.scientific.net/MSF.858.297

M3 - Conference contribution

AN - SCOPUS:84971505261

SN - 9783035710427

T3 - Materials Science Forum

SP - 297

EP - 300

BT - Silicon Carbide and Related Materials 2015

A2 - Roccaforte, Fabrizio

A2 - Giannazzo, Filippo

A2 - La Via, Francesco

A2 - Nipoti, Roberta

A2 - Crippa, Danilo

A2 - Saggio, Mario

PB - Trans Tech Publications Ltd

T2 - 16th International Conference on Silicon Carbide and Related Materials, ICSCRM 2015

Y2 - 4 October 2015 through 9 October 2015

ER -

Goue OY, Yang Y, Guo J, Raghothamachar B , Dudley M, Hosteller JL et al. Correlation of lifetime mapping of 4H-SiC epilayers with structural defects using synchrotron X-ray topography. In Roccaforte F, Giannazzo F, La Via F, Nipoti R, Crippa D, Saggio M, editors, Silicon Carbide and Related Materials 2015. Trans Tech Publications Ltd. 2016. p. 297-300. (Materials Science Forum). doi: 10.4028/www.scientific.net/MSF.858.297

Correlation of lifetime mapping of 4H-SiC epilayers with structural defects using synchrotron X-ray topography

Abstract

Publication series

Conference

Keywords

Access to Document

Other files and links

Fingerprint

Cite this