Corrigendum to “Preparation, properties, and characterization of boron phosphide films on 4H- and 6H-silicon carbide” [Solid State Sci. 47 (2015) 55–60] (S1293255815000485) (10.1016/j.solidstatesciences.2015.03.002))

Balabalaji Padavala; C. D. Frye; Zihao Ding; Ruifen Chen; Michael Dudley; Balaji Raghothamachar; Neelam Khan; J. H. Edgar

doi:10.1016/j.solidstatesciences.2016.02.007

Corrigendum to “Preparation, properties, and characterization of boron phosphide films on 4H- and 6H-silicon carbide” [Solid State Sci. 47 (2015) 55–60] (S1293255815000485) (10.1016/j.solidstatesciences.2015.03.002))

Balabalaji Padavala
, C. D. Frye
, Zihao Ding
, Ruifen Chen
, Michael Dudley
, Balaji Raghothamachar
, Neelam Khan
, J. H. Edgar

Materials Science and Engineering

Kansas State University
Stony Brook University
Georgia Gwinnett College

Research output: Contribution to journal › Comment/debate

Abstract

The authors regret that there was a typographical error in the conclusions section that says 4H–SiC(0001) miscut 4° towards [1[Formula presented]10] direction did not produce rotational twins defects, instead of 4H–SiC(0001) miscut 4° towards [1[Formula presented]00] direction. The authors would like to apologise for any inconvenience caused.

Original language	English
Pages (from-to)	83
Number of pages	1
Journal	Solid State Sciences
Volume	53
DOIs	https://doi.org/10.1016/j.solidstatesciences.2016.02.007
State	Published - Mar 2016

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Padavala, B., Frye, C. D., Ding, Z., Chen, R., Dudley, M., Raghothamachar, B., Khan, N., & Edgar, J. H. (2016). Corrigendum to “Preparation, properties, and characterization of boron phosphide films on 4H- and 6H-silicon carbide” [Solid State Sci. 47 (2015) 55–60] (S1293255815000485) (10.1016/j.solidstatesciences.2015.03.002)). Solid State Sciences, 53, 83. https://doi.org/10.1016/j.solidstatesciences.2016.02.007

@article{f000ad27245f43d6a234c21c9aab27d9,

title = "Corrigendum to “Preparation, properties, and characterization of boron phosphide films on 4H- and 6H-silicon carbide” [Solid State Sci. 47 (2015) 55–60] (S1293255815000485) (10.1016/j.solidstatesciences.2015.03.002))",

abstract = "The authors regret that there was a typographical error in the conclusions section that says 4H–SiC(0001) miscut 4° towards [1[Formula presented]10] direction did not produce rotational twins defects, instead of 4H–SiC(0001) miscut 4° towards [1[Formula presented]00] direction. The authors would like to apologise for any inconvenience caused.",

author = "Balabalaji Padavala and Frye, \{C. D.\} and Zihao Ding and Ruifen Chen and Michael Dudley and Balaji Raghothamachar and Neelam Khan and Edgar, \{J. H.\}",

note = "Publisher Copyright: {\textcopyright} 2016 Elsevier Masson SAS",

year = "2016",

month = mar,

doi = "10.1016/j.solidstatesciences.2016.02.007",

language = "English",

volume = "53",

pages = "83",

journal = "Solid State Sciences",

issn = "1293-2558",

}

Padavala, B, Frye, CD, Ding, Z, Chen, R, Dudley, M , Raghothamachar, B, Khan, N & Edgar, JH 2016, 'Corrigendum to “Preparation, properties, and characterization of boron phosphide films on 4H- and 6H-silicon carbide” [Solid State Sci. 47 (2015) 55–60] (S1293255815000485) (10.1016/j.solidstatesciences.2015.03.002))', Solid State Sciences, vol. 53, pp. 83. https://doi.org/10.1016/j.solidstatesciences.2016.02.007

Corrigendum to “Preparation, properties, and characterization of boron phosphide films on 4H- and 6H-silicon carbide” [Solid State Sci. 47 (2015) 55–60] (S1293255815000485) (10.1016/j.solidstatesciences.2015.03.002)). / Padavala, Balabalaji; Frye, C. D.; Ding, Zihao et al.
In: Solid State Sciences, Vol. 53, 03.2016, p. 83.

Research output: Contribution to journal › Comment/debate

TY - JOUR

T1 - Corrigendum to “Preparation, properties, and characterization of boron phosphide films on 4H- and 6H-silicon carbide” [Solid State Sci. 47 (2015) 55–60] (S1293255815000485) (10.1016/j.solidstatesciences.2015.03.002))

AU - Padavala, Balabalaji

AU - Frye, C. D.

AU - Ding, Zihao

AU - Chen, Ruifen

AU - Dudley, Michael

AU - Raghothamachar, Balaji

AU - Khan, Neelam

AU - Edgar, J. H.

PY - 2016/3

Y1 - 2016/3

N2 - The authors regret that there was a typographical error in the conclusions section that says 4H–SiC(0001) miscut 4° towards [1[Formula presented]10] direction did not produce rotational twins defects, instead of 4H–SiC(0001) miscut 4° towards [1[Formula presented]00] direction. The authors would like to apologise for any inconvenience caused.

AB - The authors regret that there was a typographical error in the conclusions section that says 4H–SiC(0001) miscut 4° towards [1[Formula presented]10] direction did not produce rotational twins defects, instead of 4H–SiC(0001) miscut 4° towards [1[Formula presented]00] direction. The authors would like to apologise for any inconvenience caused.

UR - https://www.scopus.com/pages/publications/85044753047

U2 - 10.1016/j.solidstatesciences.2016.02.007

DO - 10.1016/j.solidstatesciences.2016.02.007

M3 - Comment/debate

AN - SCOPUS:85044753047

SN - 1293-2558

VL - 53

SP - 83

JO - Solid State Sciences

JF - Solid State Sciences

ER -

Padavala B, Frye CD, Ding Z, Chen R, Dudley M , Raghothamachar B et al. Corrigendum to “Preparation, properties, and characterization of boron phosphide films on 4H- and 6H-silicon carbide” [Solid State Sci. 47 (2015) 55–60] (S1293255815000485) (10.1016/j.solidstatesciences.2015.03.002)). Solid State Sciences. 2016 Mar;53:83. doi: 10.1016/j.solidstatesciences.2016.02.007

Corrigendum to “Preparation, properties, and characterization of boron phosphide films on 4H- and 6H-silicon carbide” [Solid State Sci. 47 (2015) 55–60] (S1293255815000485) (10.1016/j.solidstatesciences.2015.03.002))

Abstract

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