Cryogenic semiconductor high-intensity radiation monitors

V. G. Palmieri; W. H. Bell; K. Borer; L. Casagrande; C. Da Vià; S. R.H. Devine; B. Dezillie; A. Esposito; V. Granata; F. Hauler; L. Jungermann; Z. Li; C. Lourenço; T. O. Niinikoski; V. O'Shea; G. Ruggiero; P. Sonderegger

doi:10.1016/S0168-9002(03)01684-X

Cryogenic semiconductor high-intensity radiation monitors

V. G. Palmieri
, W. H. Bell
, K. Borer
, L. Casagrande
, C. Da Vià
, S. R.H. Devine
, B. Dezillie
, A. Esposito
, V. Granata
, F. Hauler
, L. Jungermann
, Z. Li
, C. Lourenço
, T. O. Niinikoski
, V. O'Shea
, G. Ruggiero
, P. Sonderegger

Physics and Astronomy

CERN
University of Glasgow
University of Bern
Laboratório de Instrumentação e Física Experimental de Partículas
Brookhaven National Laboratory
Technical University of Munich
Brunel University London
Karlsruhe Institute of Technology

Research output: Contribution to journal › Conference article › peer-review

1 Scopus citations

Abstract

This paper describes a novel technique to monitor high-intensity particle beams by means of a semiconductor detector. It consists of cooling a semiconductor detector down to cryogenic temperature to suppress the thermally generated leakage current and to precisely measure the integrated ionization signal. It will be shown that such a device provides very good linearity and a dynamic range wider than is possible with existing techniques. Moreover, thanks to the Lazarus effect, extreme radiation hardness can be achieved providing in turn absolute intensity measurements against precise calibration of the device at low beam flux.

Original language	English
Pages (from-to)	97-100
Number of pages	4
Journal	Nuclear Inst. and Methods in Physics Research, A
Volume	510
Issue number	1-2
DOIs	https://doi.org/10.1016/S0168-9002(03)01684-X
State	Published - Sep 1 2003
Event	Proceedings of the 2nd International Symposium on Applications (SAMBA 2002) - Trieste, Italy Duration: May 27 2002 → May 29 2002

Keywords

Cryogenic
Detector
Lazarus effect
Semiconductor

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10.1016/S0168-9002(03)01684-X

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Palmieri, V. G., Bell, W. H., Borer, K., Casagrande, L., Da Vià, C., Devine, S. R. H., Dezillie, B., Esposito, A., Granata, V., Hauler, F., Jungermann, L., Li, Z., Lourenço, C., Niinikoski, T. O., O'Shea, V., Ruggiero, G., & Sonderegger, P. (2003). Cryogenic semiconductor high-intensity radiation monitors. Nuclear Inst. and Methods in Physics Research, A, 510(1-2), 97-100. https://doi.org/10.1016/S0168-9002(03)01684-X

@article{0a31602507a24eff90708f1a67bd87e5,

title = "Cryogenic semiconductor high-intensity radiation monitors",

abstract = "This paper describes a novel technique to monitor high-intensity particle beams by means of a semiconductor detector. It consists of cooling a semiconductor detector down to cryogenic temperature to suppress the thermally generated leakage current and to precisely measure the integrated ionization signal. It will be shown that such a device provides very good linearity and a dynamic range wider than is possible with existing techniques. Moreover, thanks to the Lazarus effect, extreme radiation hardness can be achieved providing in turn absolute intensity measurements against precise calibration of the device at low beam flux.",

keywords = "Cryogenic, Detector, Lazarus effect, Semiconductor",

author = "Palmieri, \{V. G.\} and Bell, \{W. H.\} and K. Borer and L. Casagrande and \{Da Vi{\`a}\}, C. and Devine, \{S. R.H.\} and B. Dezillie and A. Esposito and V. Granata and F. Hauler and L. Jungermann and Z. Li and C. Louren{\c c}o and Niinikoski, \{T. O.\} and V. O'Shea and G. Ruggiero and P. Sonderegger",

year = "2003",

month = sep,

day = "1",

doi = "10.1016/S0168-9002(03)01684-X",

language = "English",

volume = "510",

pages = "97--100",

journal = "Nuclear Inst. and Methods in Physics Research, A",

issn = "0168-9002",

number = "1-2",

note = "Proceedings of the 2nd International Symposium on Applications (SAMBA 2002) ; Conference date: 27-05-2002 Through 29-05-2002",

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Palmieri, VG, Bell, WH, Borer, K, Casagrande, L, Da Vià, C, Devine, SRH, Dezillie, B, Esposito, A, Granata, V, Hauler, F, Jungermann, L, Li, Z, Lourenço, C, Niinikoski, TO, O'Shea, V, Ruggiero, G & Sonderegger, P 2003, 'Cryogenic semiconductor high-intensity radiation monitors', Nuclear Inst. and Methods in Physics Research, A, vol. 510, no. 1-2, pp. 97-100. https://doi.org/10.1016/S0168-9002(03)01684-X

TY - JOUR

T1 - Cryogenic semiconductor high-intensity radiation monitors

AU - Palmieri, V. G.

AU - Bell, W. H.

AU - Borer, K.

AU - Casagrande, L.

AU - Da Vià, C.

AU - Devine, S. R.H.

AU - Dezillie, B.

AU - Esposito, A.

AU - Granata, V.

AU - Hauler, F.

AU - Jungermann, L.

AU - Li, Z.

AU - Lourenço, C.

AU - Niinikoski, T. O.

AU - O'Shea, V.

AU - Ruggiero, G.

AU - Sonderegger, P.

PY - 2003/9/1

Y1 - 2003/9/1

N2 - This paper describes a novel technique to monitor high-intensity particle beams by means of a semiconductor detector. It consists of cooling a semiconductor detector down to cryogenic temperature to suppress the thermally generated leakage current and to precisely measure the integrated ionization signal. It will be shown that such a device provides very good linearity and a dynamic range wider than is possible with existing techniques. Moreover, thanks to the Lazarus effect, extreme radiation hardness can be achieved providing in turn absolute intensity measurements against precise calibration of the device at low beam flux.

AB - This paper describes a novel technique to monitor high-intensity particle beams by means of a semiconductor detector. It consists of cooling a semiconductor detector down to cryogenic temperature to suppress the thermally generated leakage current and to precisely measure the integrated ionization signal. It will be shown that such a device provides very good linearity and a dynamic range wider than is possible with existing techniques. Moreover, thanks to the Lazarus effect, extreme radiation hardness can be achieved providing in turn absolute intensity measurements against precise calibration of the device at low beam flux.

KW - Cryogenic

KW - Detector

KW - Lazarus effect

KW - Semiconductor

UR - https://www.scopus.com/pages/publications/0042011238

U2 - 10.1016/S0168-9002(03)01684-X

DO - 10.1016/S0168-9002(03)01684-X

M3 - Conference article

AN - SCOPUS:0042011238

SN - 0168-9002

VL - 510

SP - 97

EP - 100

JO - Nuclear Inst. and Methods in Physics Research, A

JF - Nuclear Inst. and Methods in Physics Research, A

IS - 1-2

T2 - Proceedings of the 2nd International Symposium on Applications (SAMBA 2002)

Y2 - 27 May 2002 through 29 May 2002

ER -

Cryogenic semiconductor high-intensity radiation monitors

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