Cryogenic temperature performance of heavily irradiated silicon detectors

C. Da Via; W. H. Bell; L. Casagrande; V. Granata; V. G. Palmieri

doi:10.1016/S0168-9002(99)00444-1

Cryogenic temperature performance of heavily irradiated silicon detectors

C. Da Via
, W. H. Bell
, L. Casagrande
, V. Granata
, V. G. Palmieri

Physics and Astronomy

University of Glasgow
Laboratório de Instrumentação e Física Experimental de Partículas
National Research Council of Italy
University of Bern

Research output: Contribution to journal › Conference article › peer-review

2 Scopus citations

Abstract

The charge collection efficiency (CCE) of silicon detectors, previously irradiated with high neutron fluences, has been measured at 4.2, 77 and 195 K. The CCE recovery measured after 1.2×10¹⁴ n/cm² is 100% at a bias voltage of 50 V. For 2×10¹⁵ n/cm² the most probable signal collected for minimum ionizing particles is 13 000 electrons, corresponding to 50% CCE, at a bias voltage of 250 V. Negligible difference has been observed between 77 and 4.2 K operation, while no recovery was measurable at 195 K. The timing of the signal was measured to be better than 5 ns. The samples were irradiated and stored at room temperature and cooled only when operated. Reproducible results were obtained after several weeks and several thermal cycles.

Original language	English
Pages (from-to)	114-117
Number of pages	4
Journal	Nuclear Inst. and Methods in Physics Research, A
Volume	434
Issue number	1
DOIs	https://doi.org/10.1016/S0168-9002(99)00444-1
State	Published - Sep 11 1999
Event	Proceedings of the 1998 6th International Workshop on Gallium Arsenide Detectors and Related Compounds - Praha-Pruhonice Duration: Jun 22 1998 → Jun 26 1998

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10.1016/S0168-9002(99)00444-1

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title = "Cryogenic temperature performance of heavily irradiated silicon detectors",

abstract = "The charge collection efficiency (CCE) of silicon detectors, previously irradiated with high neutron fluences, has been measured at 4.2, 77 and 195 K. The CCE recovery measured after 1.2×1014 n/cm2 is 100\% at a bias voltage of 50 V. For 2×1015 n/cm2 the most probable signal collected for minimum ionizing particles is 13 000 electrons, corresponding to 50\% CCE, at a bias voltage of 250 V. Negligible difference has been observed between 77 and 4.2 K operation, while no recovery was measurable at 195 K. The timing of the signal was measured to be better than 5 ns. The samples were irradiated and stored at room temperature and cooled only when operated. Reproducible results were obtained after several weeks and several thermal cycles.",

author = "\{Da Via\}, C. and Bell, \{W. H.\} and L. Casagrande and V. Granata and Palmieri, \{V. G.\}",

year = "1999",

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doi = "10.1016/S0168-9002(99)00444-1",

language = "English",

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pages = "114--117",

journal = "Nuclear Inst. and Methods in Physics Research, A",

issn = "0168-9002",

number = "1",

note = "Proceedings of the 1998 6th International Workshop on Gallium Arsenide Detectors and Related Compounds ; Conference date: 22-06-1998 Through 26-06-1998",

}

TY - JOUR

T1 - Cryogenic temperature performance of heavily irradiated silicon detectors

AU - Da Via, C.

AU - Bell, W. H.

AU - Casagrande, L.

AU - Granata, V.

AU - Palmieri, V. G.

PY - 1999/9/11

Y1 - 1999/9/11

N2 - The charge collection efficiency (CCE) of silicon detectors, previously irradiated with high neutron fluences, has been measured at 4.2, 77 and 195 K. The CCE recovery measured after 1.2×1014 n/cm2 is 100% at a bias voltage of 50 V. For 2×1015 n/cm2 the most probable signal collected for minimum ionizing particles is 13 000 electrons, corresponding to 50% CCE, at a bias voltage of 250 V. Negligible difference has been observed between 77 and 4.2 K operation, while no recovery was measurable at 195 K. The timing of the signal was measured to be better than 5 ns. The samples were irradiated and stored at room temperature and cooled only when operated. Reproducible results were obtained after several weeks and several thermal cycles.

AB - The charge collection efficiency (CCE) of silicon detectors, previously irradiated with high neutron fluences, has been measured at 4.2, 77 and 195 K. The CCE recovery measured after 1.2×1014 n/cm2 is 100% at a bias voltage of 50 V. For 2×1015 n/cm2 the most probable signal collected for minimum ionizing particles is 13 000 electrons, corresponding to 50% CCE, at a bias voltage of 250 V. Negligible difference has been observed between 77 and 4.2 K operation, while no recovery was measurable at 195 K. The timing of the signal was measured to be better than 5 ns. The samples were irradiated and stored at room temperature and cooled only when operated. Reproducible results were obtained after several weeks and several thermal cycles.

UR - https://www.scopus.com/pages/publications/0032691573

U2 - 10.1016/S0168-9002(99)00444-1

DO - 10.1016/S0168-9002(99)00444-1

M3 - Conference article

AN - SCOPUS:0032691573

SN - 0168-9002

VL - 434

SP - 114

EP - 117

JO - Nuclear Inst. and Methods in Physics Research, A

JF - Nuclear Inst. and Methods in Physics Research, A

IS - 1

T2 - Proceedings of the 1998 6th International Workshop on Gallium Arsenide Detectors and Related Compounds

Y2 - 22 June 1998 through 26 June 1998

ER -

Cryogenic temperature performance of heavily irradiated silicon detectors

Abstract

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