Crystal growth and defect characterization of AlN single crystals

Shaoping Wang; Balaji Raghothamachar; Michael Dudley; Andrew G. Timmerman

Crystal growth and defect characterization of AlN single crystals

Shaoping Wang
, Balaji Raghothamachar
, Michael Dudley
, Andrew G. Timmerman

Materials Science and Engineering

Fairfield Crystal Technology, LLC

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

4 Scopus citations

Abstract

In this paper, we report results from seeded AlN PVT growth experiments carried out using (0001) carbon-face SiC seeds. The purpose of the experiments was to understand the morphology and crystalline quality of AlN thick films grown under the crystal growth environments investigated. AlN single crystal films of 100-650μm in thickness were grown and freestanding AlN single crystal pieces up to 4×5mm² were obtained. Surface morphologies and crystal defects in these AlN single crystals were studied using optical microscopy. Selected AlN single crystals were studied using a high-resolution triple-axis X-ray diffraction technique and a Synchrotron White Beam X-ray Diffraction Topography technique. Defects identified in AlN crystals are cracks, grain boundaries and crystallite inclusions.

Original language	English
Title of host publication	Materials Research Society Symposium Proceedings
Pages	775-780
Number of pages	6
State	Published - 2006
Event	2005 Materials Research Society Fall Meeting - Boston, MA, United States Duration: Nov 28 2005 → Dec 2 2005

Publication series

Name	Materials Research Society Symposium Proceedings
Volume	892
ISSN (Print)	0272-9172

Conference

Conference	2005 Materials Research Society Fall Meeting
Country/Territory	United States
City	Boston, MA
Period	11/28/05 → 12/2/05

Cite this

@inproceedings{c0198fa3e73246f199d8f50cff38f063,

title = "Crystal growth and defect characterization of AlN single crystals",

abstract = "In this paper, we report results from seeded AlN PVT growth experiments carried out using (0001) carbon-face SiC seeds. The purpose of the experiments was to understand the morphology and crystalline quality of AlN thick films grown under the crystal growth environments investigated. AlN single crystal films of 100-650μm in thickness were grown and freestanding AlN single crystal pieces up to 4×5mm2 were obtained. Surface morphologies and crystal defects in these AlN single crystals were studied using optical microscopy. Selected AlN single crystals were studied using a high-resolution triple-axis X-ray diffraction technique and a Synchrotron White Beam X-ray Diffraction Topography technique. Defects identified in AlN crystals are cracks, grain boundaries and crystallite inclusions.",

author = "Shaoping Wang and Balaji Raghothamachar and Michael Dudley and Timmerman, \{Andrew G.\}",

year = "2006",

language = "English",

isbn = "1558998462",

series = "Materials Research Society Symposium Proceedings",

pages = "775--780",

booktitle = "Materials Research Society Symposium Proceedings",

note = "2005 Materials Research Society Fall Meeting ; Conference date: 28-11-2005 Through 02-12-2005",

}

TY - GEN

T1 - Crystal growth and defect characterization of AlN single crystals

AU - Wang, Shaoping

AU - Raghothamachar, Balaji

AU - Dudley, Michael

AU - Timmerman, Andrew G.

PY - 2006

Y1 - 2006

N2 - In this paper, we report results from seeded AlN PVT growth experiments carried out using (0001) carbon-face SiC seeds. The purpose of the experiments was to understand the morphology and crystalline quality of AlN thick films grown under the crystal growth environments investigated. AlN single crystal films of 100-650μm in thickness were grown and freestanding AlN single crystal pieces up to 4×5mm2 were obtained. Surface morphologies and crystal defects in these AlN single crystals were studied using optical microscopy. Selected AlN single crystals were studied using a high-resolution triple-axis X-ray diffraction technique and a Synchrotron White Beam X-ray Diffraction Topography technique. Defects identified in AlN crystals are cracks, grain boundaries and crystallite inclusions.

AB - In this paper, we report results from seeded AlN PVT growth experiments carried out using (0001) carbon-face SiC seeds. The purpose of the experiments was to understand the morphology and crystalline quality of AlN thick films grown under the crystal growth environments investigated. AlN single crystal films of 100-650μm in thickness were grown and freestanding AlN single crystal pieces up to 4×5mm2 were obtained. Surface morphologies and crystal defects in these AlN single crystals were studied using optical microscopy. Selected AlN single crystals were studied using a high-resolution triple-axis X-ray diffraction technique and a Synchrotron White Beam X-ray Diffraction Topography technique. Defects identified in AlN crystals are cracks, grain boundaries and crystallite inclusions.

UR - https://www.scopus.com/pages/publications/33646456480

M3 - Conference contribution

AN - SCOPUS:33646456480

SN - 1558998462

SN - 9781558998469

T3 - Materials Research Society Symposium Proceedings

SP - 775

EP - 780

BT - Materials Research Society Symposium Proceedings

T2 - 2005 Materials Research Society Fall Meeting

Y2 - 28 November 2005 through 2 December 2005

ER -

Crystal growth and defect characterization of AlN single crystals

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