Current pulses and high-frequency oscillations in a-Si/Si(p)/Si(n) heterojunction device

V. A. Dorosinets; V. A. Samuilov; N. A. Poklonski; K. G. Kyritsi; A. N. Anagnostopoulos; G. L. Bleris; A. Čenys

doi:10.1088/0268-1242/14/10/303

Current pulses and high-frequency oscillations in a-Si/Si(p)/Si(n) heterojunction device

V. A. Dorosinets
, V. A. Samuilov
, N. A. Poklonski
, K. G. Kyritsi
, A. N. Anagnostopoulos
, G. L. Bleris
, A. Čenys

Materials Science and Engineering

Belarusian State University
Aristotle University of Thessaloniki
Center for Physical Sciences and Technology

Research output: Contribution to journal › Article › peer-review

3 Scopus citations

Abstract

A three-terminal a-Si/Si(p)/Si(n) heterojunction device was found to generate pulses of the collector current with a rise time of approximately 10^-7 s and a fall time of approximately 4×10^-7 s. The voltage applied to the base (0.8-1.5 V) controlled the pulse repetition rate. When the voltage reaches approximately 1.0 V, the pulses start to overlap, and the output signal is a high-frequency oscillation (10⁶-10⁷ Hz) of the collector current. A simple mechanism explaining the pulse generation and the high-frequency oscillations has been proposed. It involves the extremely high recombination rate of the injected carriers in the thin a-Si layer of the a-Si/Si(p) interface.

Original language	English
Pages (from-to)	897-900
Number of pages	4
Journal	Semiconductor Science and Technology
Volume	14
Issue number	10
DOIs	https://doi.org/10.1088/0268-1242/14/10/303
State	Published - Oct 1999

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title = "Current pulses and high-frequency oscillations in a-Si/Si(p)/Si(n) heterojunction device",

abstract = "A three-terminal a-Si/Si(p)/Si(n) heterojunction device was found to generate pulses of the collector current with a rise time of approximately 10-7 s and a fall time of approximately 4×10-7 s. The voltage applied to the base (0.8-1.5 V) controlled the pulse repetition rate. When the voltage reaches approximately 1.0 V, the pulses start to overlap, and the output signal is a high-frequency oscillation (106-107 Hz) of the collector current. A simple mechanism explaining the pulse generation and the high-frequency oscillations has been proposed. It involves the extremely high recombination rate of the injected carriers in the thin a-Si layer of the a-Si/Si(p) interface.",

author = "Dorosinets, \{V. A.\} and Samuilov, \{V. A.\} and Poklonski, \{N. A.\} and Kyritsi, \{K. G.\} and Anagnostopoulos, \{A. N.\} and Bleris, \{G. L.\} and A. {\v C}enys",

year = "1999",

month = oct,

doi = "10.1088/0268-1242/14/10/303",

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T1 - Current pulses and high-frequency oscillations in a-Si/Si(p)/Si(n) heterojunction device

AU - Dorosinets, V. A.

AU - Samuilov, V. A.

AU - Poklonski, N. A.

AU - Kyritsi, K. G.

AU - Anagnostopoulos, A. N.

AU - Bleris, G. L.

AU - Čenys, A.

PY - 1999/10

Y1 - 1999/10

N2 - A three-terminal a-Si/Si(p)/Si(n) heterojunction device was found to generate pulses of the collector current with a rise time of approximately 10-7 s and a fall time of approximately 4×10-7 s. The voltage applied to the base (0.8-1.5 V) controlled the pulse repetition rate. When the voltage reaches approximately 1.0 V, the pulses start to overlap, and the output signal is a high-frequency oscillation (106-107 Hz) of the collector current. A simple mechanism explaining the pulse generation and the high-frequency oscillations has been proposed. It involves the extremely high recombination rate of the injected carriers in the thin a-Si layer of the a-Si/Si(p) interface.

AB - A three-terminal a-Si/Si(p)/Si(n) heterojunction device was found to generate pulses of the collector current with a rise time of approximately 10-7 s and a fall time of approximately 4×10-7 s. The voltage applied to the base (0.8-1.5 V) controlled the pulse repetition rate. When the voltage reaches approximately 1.0 V, the pulses start to overlap, and the output signal is a high-frequency oscillation (106-107 Hz) of the collector current. A simple mechanism explaining the pulse generation and the high-frequency oscillations has been proposed. It involves the extremely high recombination rate of the injected carriers in the thin a-Si layer of the a-Si/Si(p) interface.

UR - https://www.scopus.com/pages/publications/0032594731

U2 - 10.1088/0268-1242/14/10/303

DO - 10.1088/0268-1242/14/10/303

M3 - Article

AN - SCOPUS:0032594731

SN - 0268-1242

VL - 14

SP - 897

EP - 900

JO - Semiconductor Science and Technology

JF - Semiconductor Science and Technology

IS - 10

ER -

Current pulses and high-frequency oscillations in a-Si/Si(p)/Si(n) heterojunction device

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