TY - GEN
T1 - Cu2O photovoltaic devices incorporating Zn(O, S) buffer layers
AU - Tolstova, Yulia
AU - Omelchenko, Stefan T.
AU - Blackwell, Raymond E.
AU - Shing, Amanda M.
AU - Atwater, Harry A.
N1 - Publisher Copyright:
© 2016 IEEE.
PY - 2016/11/18
Y1 - 2016/11/18
N2 - Cu2O is a semiconductor composed of earth - abundant and non-toxic elements that is as a promising photovoltaic material. One of the main issues limiting the efficiency of Cu2O solar cells is the availability of n-type window layers with an appropriate band offset and low interfacial reactivity. In this work, we show the effect of controlling the interface composition on the device properties of a Cu2O solar cell incorporating a Zn(O, S) window layer. We demonstrate that deposition of Zn(O, S) at elevated temperature limits formation of ZnSO4 and increases the current that can be collected from the cell by 54%.
AB - Cu2O is a semiconductor composed of earth - abundant and non-toxic elements that is as a promising photovoltaic material. One of the main issues limiting the efficiency of Cu2O solar cells is the availability of n-type window layers with an appropriate band offset and low interfacial reactivity. In this work, we show the effect of controlling the interface composition on the device properties of a Cu2O solar cell incorporating a Zn(O, S) window layer. We demonstrate that deposition of Zn(O, S) at elevated temperature limits formation of ZnSO4 and increases the current that can be collected from the cell by 54%.
UR - https://www.scopus.com/pages/publications/85003691414
U2 - 10.1109/PVSC.2016.7750170
DO - 10.1109/PVSC.2016.7750170
M3 - Conference contribution
AN - SCOPUS:85003691414
T3 - Conference Record of the IEEE Photovoltaic Specialists Conference
SP - 2833
EP - 2835
BT - 2016 IEEE 43rd Photovoltaic Specialists Conference, PVSC 2016
PB - Institute of Electrical and Electronics Engineers Inc.
T2 - 43rd IEEE Photovoltaic Specialists Conference, PVSC 2016
Y2 - 5 June 2016 through 10 June 2016
ER -