Cu2O photovoltaic devices incorporating Zn(O,S) buffer layers

Yulia Tolstova; Stefan T. Omelchenko; Raymond E. Blackwell; Amanda M. Shing; Harry A. Atwater

doi:10.1109/PVSC.2017.8366663

Cu₂O photovoltaic devices incorporating Zn(O,S) buffer layers

Yulia Tolstova
, Stefan T. Omelchenko
, Raymond E. Blackwell
, Amanda M. Shing
, Harry A. Atwater

Physics and Astronomy

California Institute of Technology

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

Abstract

CU₂O is a semiconductor composed of earth - abundant and non-toxic elements that is as a promising photovoltaic material. One of the main issues limiting the efficiency of Cu₂O solar cells is the availability of n-type window layers with an appropriate band offset and low interfacial reactivity. In this work, we show the effect of controlling the interface composition on the device properties of a Cu₂O solar cell incorporating a Zn(O,S) window layer. We demonstrate that deposition of Zn(O,S) at elevated temperature limits formation of ZnSO4 and increases the current that can be collected from the cell by 54%.

Original language	English
Title of host publication	2017 IEEE 44th Photovoltaic Specialist Conference, PVSC 2017
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	1395-1399
Number of pages	5
ISBN (Electronic)	9781509056057
DOIs	https://doi.org/10.1109/PVSC.2017.8366663
State	Published - 2017
Event	44th IEEE Photovoltaic Specialist Conference, PVSC 2017 - Washington, United States Duration: Jun 25 2017 → Jun 30 2017

Publication series

Name	2017 IEEE 44th Photovoltaic Specialist Conference, PVSC 2017

Conference

Conference	44th IEEE Photovoltaic Specialist Conference, PVSC 2017
Country/Territory	United States
City	Washington
Period	06/25/17 → 06/30/17

Access to Document

10.1109/PVSC.2017.8366663

Cite this

Tolstova, Y., Omelchenko, S. T., Blackwell, R. E., Shing, A. M., & Atwater, H. A. (2017). Cu₂O photovoltaic devices incorporating Zn(O,S) buffer layers. In 2017 IEEE 44th Photovoltaic Specialist Conference, PVSC 2017 (pp. 1395-1399). (2017 IEEE 44th Photovoltaic Specialist Conference, PVSC 2017). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/PVSC.2017.8366663

@inproceedings{0778124969fd42c48ff7acaebae59309,

title = "Cu2O photovoltaic devices incorporating Zn(O,S) buffer layers",

abstract = "CU2O is a semiconductor composed of earth - abundant and non-toxic elements that is as a promising photovoltaic material. One of the main issues limiting the efficiency of Cu2O solar cells is the availability of n-type window layers with an appropriate band offset and low interfacial reactivity. In this work, we show the effect of controlling the interface composition on the device properties of a Cu2O solar cell incorporating a Zn(O,S) window layer. We demonstrate that deposition of Zn(O,S) at elevated temperature limits formation of ZnSO4 and increases the current that can be collected from the cell by 54\%.",

author = "Yulia Tolstova and Omelchenko, \{Stefan T.\} and Blackwell, \{Raymond E.\} and Shing, \{Amanda M.\} and Atwater, \{Harry A.\}",

note = "Publisher Copyright: {\textcopyright} 2017 IEEE.; 44th IEEE Photovoltaic Specialist Conference, PVSC 2017 ; Conference date: 25-06-2017 Through 30-06-2017",

year = "2017",

doi = "10.1109/PVSC.2017.8366663",

language = "English",

series = "2017 IEEE 44th Photovoltaic Specialist Conference, PVSC 2017",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

pages = "1395--1399",

booktitle = "2017 IEEE 44th Photovoltaic Specialist Conference, PVSC 2017",

}

Tolstova, Y, Omelchenko, ST, Blackwell, RE, Shing, AM & Atwater, HA 2017, Cu₂O photovoltaic devices incorporating Zn(O,S) buffer layers. in 2017 IEEE 44th Photovoltaic Specialist Conference, PVSC 2017. 2017 IEEE 44th Photovoltaic Specialist Conference, PVSC 2017, Institute of Electrical and Electronics Engineers Inc., pp. 1395-1399, 44th IEEE Photovoltaic Specialist Conference, PVSC 2017, Washington, United States, 06/25/17. https://doi.org/10.1109/PVSC.2017.8366663

Cu₂O photovoltaic devices incorporating Zn(O,S) buffer layers. / Tolstova, Yulia; Omelchenko, Stefan T.; Blackwell, Raymond E. et al.
2017 IEEE 44th Photovoltaic Specialist Conference, PVSC 2017. Institute of Electrical and Electronics Engineers Inc., 2017. p. 1395-1399 (2017 IEEE 44th Photovoltaic Specialist Conference, PVSC 2017).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

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T1 - Cu2O photovoltaic devices incorporating Zn(O,S) buffer layers

AU - Tolstova, Yulia

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AU - Atwater, Harry A.

PY - 2017

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N2 - CU2O is a semiconductor composed of earth - abundant and non-toxic elements that is as a promising photovoltaic material. One of the main issues limiting the efficiency of Cu2O solar cells is the availability of n-type window layers with an appropriate band offset and low interfacial reactivity. In this work, we show the effect of controlling the interface composition on the device properties of a Cu2O solar cell incorporating a Zn(O,S) window layer. We demonstrate that deposition of Zn(O,S) at elevated temperature limits formation of ZnSO4 and increases the current that can be collected from the cell by 54%.

AB - CU2O is a semiconductor composed of earth - abundant and non-toxic elements that is as a promising photovoltaic material. One of the main issues limiting the efficiency of Cu2O solar cells is the availability of n-type window layers with an appropriate band offset and low interfacial reactivity. In this work, we show the effect of controlling the interface composition on the device properties of a Cu2O solar cell incorporating a Zn(O,S) window layer. We demonstrate that deposition of Zn(O,S) at elevated temperature limits formation of ZnSO4 and increases the current that can be collected from the cell by 54%.

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