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CW room temperature operation of the GaSb-based photonic crystal surface emitting diode lasers

  • L. Shterengas
  • , W. Lee
  • , R. Liu
  • , A. Stein
  • , G. Kipshidze
  • , G. Belenky
  • Stony Brook University
  • Brookhaven National Laboratory

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

1 Scopus citations

Abstract

We report on the continuous wave (CW) room temperature operation of epitaxially regrown monolithic GaSb-based photonic crystal surface emitting diode lasers (PCSEL) with ≈ λ 2 µm. The devices are based on laser heterostructure containing carrier stopper layer designed to inhibit electron leakage into buried photonic-crystal section. Atomic hydrogen cleaning of the nanopatterned surface followed by optimized epitaxial step resulted in highly uniform air-pocket-retaining regrowth. The increase of the number of air-pockets in unit cells of the buried photonic crystal layer led to enhancement of the PCSEL output power and improvement of the far field pattern The PCSELs with buried high-index-contrast photonic crystal utilizing four air-pockets per unit cell generated 30 mW of continuous wave power from 200 µm diameter aperture.

Original languageEnglish
Title of host publicationNovel In-Plane Semiconductor Lasers XXIII
EditorsAlexey A. Belyanin, Peter M. Smowton
PublisherSPIE
ISBN (Electronic)9781510670709
DOIs
StatePublished - 2024
EventNovel In-Plane Semiconductor Lasers XXIII 2024 - San Francisco, United States
Duration: Jan 30 2024Feb 1 2024

Publication series

NameProceedings of SPIE - The International Society for Optical Engineering
Volume12905
ISSN (Print)0277-786X
ISSN (Electronic)1996-756X

Conference

ConferenceNovel In-Plane Semiconductor Lasers XXIII 2024
Country/TerritoryUnited States
CitySan Francisco
Period01/30/2402/1/24

Keywords

  • antimonides
  • mid-infrared
  • photonic crystal
  • regrowth
  • surface emitting lasers

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