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Decoupling Capacitor Topologies for TSV-Based 3-D ICs with Power Gating

  • Stony Brook University

Research output: Contribution to journalArticlepeer-review

8 Scopus citations

Abstract

In traditional decoupling capacitor topologies, power gating can significantly degrade the system-wide power integrity of a 3-D integrated circuit since the decoupling capacitance associated with the power-gated block/plane becomes ineffective for the neighboring, active planes. Two topologies are investigated to alleviate this issue by exploiting: 1) relatively low-resistance through silicon vias (TSVs) and 2) ability of TSVs to bypass plane-level power networks when delivering the power supply voltage. In the proposed topologies, decoupling capacitors placed within a plane can provide charge to neighboring planes even when the plane is power gated, achieving up to 50% and 87% reduction in, respectively, rms power supply and power gating (in-rush current) noise at the expense of a moderate increase in physical area and peak power consumption.

Original languageEnglish
Article number7106510
Pages (from-to)2983-2991
Number of pages9
JournalIEEE Transactions on Very Large Scale Integration (VLSI) Systems
Volume23
Issue number12
DOIs
StatePublished - Dec 1 2015

Keywords

  • Power dissipation
  • three-dimensional integrated circuits
  • through-silicon vias
  • Very large scale integration.

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