Defect reduction and its mechanism of selective Ge epitaxy in trenches on Si(001) substrates using aspect ratio trapping

J. S. Park; J. Bai; M. Curtin; B. Adekore; Z. Cheng; M. Carroll; M. Dudley; A. Lochtefeld

doi:10.1557/proc-0994-f10-05

Defect reduction and its mechanism of selective Ge epitaxy in trenches on Si(001) substrates using aspect ratio trapping

J. S. Park
, J. Bai
, M. Curtin
, B. Adekore
, Z. Cheng
, M. Carroll
, M. Dudley
, A. Lochtefeld

Materials Science and Engineering

AmberWave Systems Corp.

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

3 Scopus citations

Abstract

Defect-free germanium has been demonstrated in SiO₂ trenches on silicon via aspect ratio trapping, whereby defects arising from lattice mismatch are trapped by laterally confining sidewalls. Results were achieved through a combination of conventional patterning of SiO₂, and selective growth of Ge as thin as 450 nm. It was revealed that facets, when formed early on in the growth process, play a dominant role in determining the configurations of threading dislocations in the films. This approach shows great promise for the integration of Ge and/or III-V materials, sufficiently large for key device applications, onto silicon substrates.

Original language	English
Title of host publication	Semiconductor Defect Engineering - Materials, Synthetic Structures and Devices II
Publisher	Materials Research Society
Pages	315-320
Number of pages	6
ISBN (Print)	9781558999541
DOIs	https://doi.org/10.1557/proc-0994-f10-05
State	Published - 2007
Event	Semiconductor Defect Engineering - Materials, Synthetic Structures and Devices II - San Francisco, CA, United States Duration: Apr 9 2007 → Apr 13 2007

Publication series

Name	Materials Research Society Symposium Proceedings
Volume	994
ISSN (Print)	0272-9172

Conference

Conference	Semiconductor Defect Engineering - Materials, Synthetic Structures and Devices II
Country/Territory	United States
City	San Francisco, CA
Period	04/9/07 → 04/13/07

Access to Document

10.1557/proc-0994-f10-05

Cite this

Park, J. S., Bai, J., Curtin, M., Adekore, B., Cheng, Z., Carroll, M., Dudley, M., & Lochtefeld, A. (2007). Defect reduction and its mechanism of selective Ge epitaxy in trenches on Si(001) substrates using aspect ratio trapping. In Semiconductor Defect Engineering - Materials, Synthetic Structures and Devices II (pp. 315-320). (Materials Research Society Symposium Proceedings; Vol. 994). Materials Research Society. https://doi.org/10.1557/proc-0994-f10-05

@inproceedings{3f4bd91fb5bd4bc789a3995f91a1543c,

title = "Defect reduction and its mechanism of selective Ge epitaxy in trenches on Si(001) substrates using aspect ratio trapping",

abstract = "Defect-free germanium has been demonstrated in SiO2 trenches on silicon via aspect ratio trapping, whereby defects arising from lattice mismatch are trapped by laterally confining sidewalls. Results were achieved through a combination of conventional patterning of SiO2, and selective growth of Ge as thin as 450 nm. It was revealed that facets, when formed early on in the growth process, play a dominant role in determining the configurations of threading dislocations in the films. This approach shows great promise for the integration of Ge and/or III-V materials, sufficiently large for key device applications, onto silicon substrates.",

author = "Park, \{J. S.\} and J. Bai and M. Curtin and B. Adekore and Z. Cheng and M. Carroll and M. Dudley and A. Lochtefeld",

year = "2007",

doi = "10.1557/proc-0994-f10-05",

language = "English",

isbn = "9781558999541",

series = "Materials Research Society Symposium Proceedings",

publisher = "Materials Research Society",

pages = "315--320",

booktitle = "Semiconductor Defect Engineering - Materials, Synthetic Structures and Devices II",

note = "Semiconductor Defect Engineering - Materials, Synthetic Structures and Devices II ; Conference date: 09-04-2007 Through 13-04-2007",

}

Park, JS, Bai, J, Curtin, M, Adekore, B, Cheng, Z, Carroll, M, Dudley, M & Lochtefeld, A 2007, Defect reduction and its mechanism of selective Ge epitaxy in trenches on Si(001) substrates using aspect ratio trapping. in Semiconductor Defect Engineering - Materials, Synthetic Structures and Devices II. Materials Research Society Symposium Proceedings, vol. 994, Materials Research Society, pp. 315-320, Semiconductor Defect Engineering - Materials, Synthetic Structures and Devices II, San Francisco, CA, United States, 04/9/07. https://doi.org/10.1557/proc-0994-f10-05

Defect reduction and its mechanism of selective Ge epitaxy in trenches on Si(001) substrates using aspect ratio trapping. / Park, J. S.; Bai, J.; Curtin, M. et al.
Semiconductor Defect Engineering - Materials, Synthetic Structures and Devices II. Materials Research Society, 2007. p. 315-320 (Materials Research Society Symposium Proceedings; Vol. 994).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - Defect reduction and its mechanism of selective Ge epitaxy in trenches on Si(001) substrates using aspect ratio trapping

AU - Park, J. S.

AU - Bai, J.

AU - Curtin, M.

AU - Adekore, B.

AU - Cheng, Z.

AU - Carroll, M.

AU - Dudley, M.

AU - Lochtefeld, A.

PY - 2007

Y1 - 2007

N2 - Defect-free germanium has been demonstrated in SiO2 trenches on silicon via aspect ratio trapping, whereby defects arising from lattice mismatch are trapped by laterally confining sidewalls. Results were achieved through a combination of conventional patterning of SiO2, and selective growth of Ge as thin as 450 nm. It was revealed that facets, when formed early on in the growth process, play a dominant role in determining the configurations of threading dislocations in the films. This approach shows great promise for the integration of Ge and/or III-V materials, sufficiently large for key device applications, onto silicon substrates.

AB - Defect-free germanium has been demonstrated in SiO2 trenches on silicon via aspect ratio trapping, whereby defects arising from lattice mismatch are trapped by laterally confining sidewalls. Results were achieved through a combination of conventional patterning of SiO2, and selective growth of Ge as thin as 450 nm. It was revealed that facets, when formed early on in the growth process, play a dominant role in determining the configurations of threading dislocations in the films. This approach shows great promise for the integration of Ge and/or III-V materials, sufficiently large for key device applications, onto silicon substrates.

UR - https://www.scopus.com/pages/publications/45749114102

U2 - 10.1557/proc-0994-f10-05

DO - 10.1557/proc-0994-f10-05

M3 - Conference contribution

AN - SCOPUS:45749114102

SN - 9781558999541

T3 - Materials Research Society Symposium Proceedings

SP - 315

EP - 320

BT - Semiconductor Defect Engineering - Materials, Synthetic Structures and Devices II

PB - Materials Research Society

T2 - Semiconductor Defect Engineering - Materials, Synthetic Structures and Devices II

Y2 - 9 April 2007 through 13 April 2007

ER -

Park JS, Bai J, Curtin M, Adekore B, Cheng Z, Carroll M et al. Defect reduction and its mechanism of selective Ge epitaxy in trenches on Si(001) substrates using aspect ratio trapping. In Semiconductor Defect Engineering - Materials, Synthetic Structures and Devices II. Materials Research Society. 2007. p. 315-320. (Materials Research Society Symposium Proceedings). doi: 10.1557/proc-0994-f10-05

Defect reduction and its mechanism of selective Ge epitaxy in trenches on Si(001) substrates using aspect ratio trapping

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