Defects in FZ-silicon after neutron irradiation - A positron annihilation and photoluminescence study

V. Bondarenko; R. Krause-Rehberg; H. Feick; C. Davia

doi:10.1023/B:JMSC.0000012922.58713.37

Defects in FZ-silicon after neutron irradiation - A positron annihilation and photoluminescence study

V. Bondarenko
, R. Krause-Rehberg
, H. Feick
, C. Davia

Physics and Astronomy

Martin Luther University Halle-Wittenberg
University of California at Berkeley

Research output: Contribution to journal › Article › peer-review

8 Scopus citations

Abstract

Float-zone (FZ) Si irradiated with 1 MeV neutrons was investigated by means of positron annihilation lifetime spectroscopy and photoluminescence. Three types of defects were observed: di-vacancies, small vacancy clusters and an unknown defect with the defect-related lifetime of (285 ± 5) ps that contribute to positron trapping only at low temperatures. Two annealing stages were observed: one at 350°C and another at 500°C. While the former is due to the annealing of divacancies, the latter is caused by the annealing of vacancy clusters and the unknown defect.

Original language	English
Pages (from-to)	919-923
Number of pages	5
Journal	Journal of Materials Science
Volume	39
Issue number	3
DOIs	https://doi.org/10.1023/B:JMSC.0000012922.58713.37
State	Published - Feb 1 2004

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abstract = "Float-zone (FZ) Si irradiated with 1 MeV neutrons was investigated by means of positron annihilation lifetime spectroscopy and photoluminescence. Three types of defects were observed: di-vacancies, small vacancy clusters and an unknown defect with the defect-related lifetime of (285 ± 5) ps that contribute to positron trapping only at low temperatures. Two annealing stages were observed: one at 350°C and another at 500°C. While the former is due to the annealing of divacancies, the latter is caused by the annealing of vacancy clusters and the unknown defect.",

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AU - Bondarenko, V.

AU - Krause-Rehberg, R.

AU - Feick, H.

AU - Davia, C.

PY - 2004/2/1

Y1 - 2004/2/1

N2 - Float-zone (FZ) Si irradiated with 1 MeV neutrons was investigated by means of positron annihilation lifetime spectroscopy and photoluminescence. Three types of defects were observed: di-vacancies, small vacancy clusters and an unknown defect with the defect-related lifetime of (285 ± 5) ps that contribute to positron trapping only at low temperatures. Two annealing stages were observed: one at 350°C and another at 500°C. While the former is due to the annealing of divacancies, the latter is caused by the annealing of vacancy clusters and the unknown defect.

AB - Float-zone (FZ) Si irradiated with 1 MeV neutrons was investigated by means of positron annihilation lifetime spectroscopy and photoluminescence. Three types of defects were observed: di-vacancies, small vacancy clusters and an unknown defect with the defect-related lifetime of (285 ± 5) ps that contribute to positron trapping only at low temperatures. Two annealing stages were observed: one at 350°C and another at 500°C. While the former is due to the annealing of divacancies, the latter is caused by the annealing of vacancy clusters and the unknown defect.

UR - https://www.scopus.com/pages/publications/0442294248

U2 - 10.1023/B:JMSC.0000012922.58713.37

DO - 10.1023/B:JMSC.0000012922.58713.37

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SP - 919

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JO - Journal of Materials Science

JF - Journal of Materials Science

IS - 3

ER -

Defects in FZ-silicon after neutron irradiation - A positron annihilation and photoluminescence study

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