Demonstration of boron arsenide heterojunctions: A radiation hard wide band gap semiconductor device

Y. Gong; M. Tapajna; S. Bakalova; Y. Zhang; J. H. Edgar; Y. Zhang; M. Dudley; M. Hopkins; M. Kuball

doi:10.1063/1.3443712

Demonstration of boron arsenide heterojunctions: A radiation hard wide band gap semiconductor device

Y. Gong
, M. Tapajna
, S. Bakalova
, Y. Zhang
, J. H. Edgar
, Y. Zhang
, M. Dudley
, M. Hopkins
, M. Kuball

Materials Science and Engineering

University of Bristol
Kansas State University
Stony Brook University
University of Bath, Department of Electronic & Electrical Engineering

Research output: Contribution to journal › Article › peer-review

17 Scopus citations

Abstract

B₁₂ As₂ /SiC pn heterojunction diodes based on the radiation-hard B₁₂ As₂ deposited on (0001) n -type 4H-SiC via chemical vapor deposition were demonstrated. The diodes exhibit good rectifying behavior with an ideality factor of 1.8 and a leakage current as low as 9.4× 10^-6 A/ cm². Capacitance-voltage measurements using a two-frequency technique showed a hole concentration of ∼1.8-2.0× 10¹⁷ cm^-3 in B₁₂ As ₂ with a slight increase near the interface due to the presence of an interfacial layer to accommodate lattice mismatch. Band offsets between the B₁₂ As₂ and SiC were estimated to be ∼1.06 eV and 1.12 eV for conduction band and valance band, respectively.

Original language	English
Article number	223506
Journal	Applied Physics Letters
Volume	96
Issue number	22
DOIs	https://doi.org/10.1063/1.3443712
State	Published - May 31 2010

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title = "Demonstration of boron arsenide heterojunctions: A radiation hard wide band gap semiconductor device",

abstract = "B12 As2 /SiC pn heterojunction diodes based on the radiation-hard B12 As2 deposited on (0001) n -type 4H-SiC via chemical vapor deposition were demonstrated. The diodes exhibit good rectifying behavior with an ideality factor of 1.8 and a leakage current as low as 9.4× 10-6 A/ cm2. Capacitance-voltage measurements using a two-frequency technique showed a hole concentration of ∼1.8-2.0× 1017 cm-3 in B12 As 2 with a slight increase near the interface due to the presence of an interfacial layer to accommodate lattice mismatch. Band offsets between the B12 As2 and SiC were estimated to be ∼1.06 eV and 1.12 eV for conduction band and valance band, respectively.",

author = "Y. Gong and M. Tapajna and S. Bakalova and Y. Zhang and Edgar, \{J. H.\} and Y. Zhang and M. Dudley and M. Hopkins and M. Kuball",

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doi = "10.1063/1.3443712",

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T1 - Demonstration of boron arsenide heterojunctions

T2 - A radiation hard wide band gap semiconductor device

AU - Gong, Y.

AU - Tapajna, M.

AU - Bakalova, S.

AU - Zhang, Y.

AU - Edgar, J. H.

AU - Zhang, Y.

AU - Dudley, M.

AU - Hopkins, M.

AU - Kuball, M.

PY - 2010/5/31

Y1 - 2010/5/31

N2 - B12 As2 /SiC pn heterojunction diodes based on the radiation-hard B12 As2 deposited on (0001) n -type 4H-SiC via chemical vapor deposition were demonstrated. The diodes exhibit good rectifying behavior with an ideality factor of 1.8 and a leakage current as low as 9.4× 10-6 A/ cm2. Capacitance-voltage measurements using a two-frequency technique showed a hole concentration of ∼1.8-2.0× 1017 cm-3 in B12 As 2 with a slight increase near the interface due to the presence of an interfacial layer to accommodate lattice mismatch. Band offsets between the B12 As2 and SiC were estimated to be ∼1.06 eV and 1.12 eV for conduction band and valance band, respectively.

AB - B12 As2 /SiC pn heterojunction diodes based on the radiation-hard B12 As2 deposited on (0001) n -type 4H-SiC via chemical vapor deposition were demonstrated. The diodes exhibit good rectifying behavior with an ideality factor of 1.8 and a leakage current as low as 9.4× 10-6 A/ cm2. Capacitance-voltage measurements using a two-frequency technique showed a hole concentration of ∼1.8-2.0× 1017 cm-3 in B12 As 2 with a slight increase near the interface due to the presence of an interfacial layer to accommodate lattice mismatch. Band offsets between the B12 As2 and SiC were estimated to be ∼1.06 eV and 1.12 eV for conduction band and valance band, respectively.

UR - https://www.scopus.com/pages/publications/77953584934

U2 - 10.1063/1.3443712

DO - 10.1063/1.3443712

M3 - Article

AN - SCOPUS:77953584934

SN - 0003-6951

VL - 96

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 22

M1 - 223506

ER -

Demonstration of boron arsenide heterojunctions: A radiation hard wide band gap semiconductor device

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