Densities and mobilities of coexisting electrons and holes in GaSb/InAs/GaSb quantum wells

H. Munekata; E. E. Mendez; Y. Iye; L. Esaki

doi:10.1016/0039-6028(86)90451-6

Densities and mobilities of coexisting electrons and holes in GaSb/InAs/GaSb quantum wells

H. Munekata
, E. E. Mendez
, Y. Iye
, L. Esaki

Physics and Astronomy

IBM

Research output: Contribution to journal › Article › peer-review

49 Scopus citations

Abstract

Quantum wells of GaSb/InAs/GaSb have been prepared by molecular beam epitaxy (MBE) with emphasis on the correlation of the growth parameters with their electronic properties as characterized by magnetotransport measurements. An electron mobility of 3.5 × 10⁵ cm²/V s has been obtained for the first time in the presence of holes. The holes disappear at a critical InAs thickness around 60 Å resulting from a semimetal-semiconductor transition.

Original language	English
Pages (from-to)	449-453
Number of pages	5
Journal	Surface Science
Volume	174
Issue number	1-3
DOIs	https://doi.org/10.1016/0039-6028(86)90451-6
State	Published - Aug 3 1986

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title = "Densities and mobilities of coexisting electrons and holes in GaSb/InAs/GaSb quantum wells",

abstract = "Quantum wells of GaSb/InAs/GaSb have been prepared by molecular beam epitaxy (MBE) with emphasis on the correlation of the growth parameters with their electronic properties as characterized by magnetotransport measurements. An electron mobility of 3.5 {\texttimes} 105 cm2/V s has been obtained for the first time in the presence of holes. The holes disappear at a critical InAs thickness around 60 {\AA} resulting from a semimetal-semiconductor transition.",

author = "H. Munekata and Mendez, \{E. E.\} and Y. Iye and L. Esaki",

year = "1986",

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journal = "Surface Science",

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T1 - Densities and mobilities of coexisting electrons and holes in GaSb/InAs/GaSb quantum wells

AU - Munekata, H.

AU - Mendez, E. E.

AU - Iye, Y.

AU - Esaki, L.

PY - 1986/8/3

Y1 - 1986/8/3

N2 - Quantum wells of GaSb/InAs/GaSb have been prepared by molecular beam epitaxy (MBE) with emphasis on the correlation of the growth parameters with their electronic properties as characterized by magnetotransport measurements. An electron mobility of 3.5 × 105 cm2/V s has been obtained for the first time in the presence of holes. The holes disappear at a critical InAs thickness around 60 Å resulting from a semimetal-semiconductor transition.

AB - Quantum wells of GaSb/InAs/GaSb have been prepared by molecular beam epitaxy (MBE) with emphasis on the correlation of the growth parameters with their electronic properties as characterized by magnetotransport measurements. An electron mobility of 3.5 × 105 cm2/V s has been obtained for the first time in the presence of holes. The holes disappear at a critical InAs thickness around 60 Å resulting from a semimetal-semiconductor transition.

UR - https://www.scopus.com/pages/publications/0003043574

U2 - 10.1016/0039-6028(86)90451-6

DO - 10.1016/0039-6028(86)90451-6

M3 - Article

AN - SCOPUS:0003043574

SN - 0039-6028

VL - 174

SP - 449

EP - 453

JO - Surface Science

JF - Surface Science

IS - 1-3

ER -

Densities and mobilities of coexisting electrons and holes in GaSb/InAs/GaSb quantum wells

Abstract

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