Dependence of the carrier concentration on the current in mid-infrared injection lasers with quantum wells

M. Ya Vinnichenko; L. E. Vorobjev; D. A. Firsov; M. O. Mashko; R. M. Balagula; G. Belenky; L. Shterengas; G. Kipshidze

doi:10.1134/S1063782613110237

Dependence of the carrier concentration on the current in mid-infrared injection lasers with quantum wells

M. Ya Vinnichenko
, L. E. Vorobjev
, D. A. Firsov
, M. O. Mashko
, R. M. Balagula
, G. Belenky
, L. Shterengas
, G. Kipshidze

Electrical Engineering

Peter the Great St. Petersburg Polytechnic University
Stony Brook University

Research output: Contribution to journal › Article › peer-review

4 Scopus citations

Abstract

The current dependences of spontaneous luminescence in mid-IR injection lasers with InGaAsSb/InAlGaAsSb quantum wells are experimentally studied in the subthreshold and lasing modes. The current dependence of the carrier concentration is determined using the current dependence of the total spontaneous luminescence. A lack of carrier concentration saturation with current in the lasing mode was observed. It is shown that this can be due to carrier heating at low quantum-confinement levels and an increase in light absorption by free holes in the waveguide.

Original language	English
Pages (from-to)	1513-1516
Number of pages	4
Journal	Semiconductors
Volume	47
Issue number	11
DOIs	https://doi.org/10.1134/S1063782613110237
State	Published - Nov 2013

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abstract = "The current dependences of spontaneous luminescence in mid-IR injection lasers with InGaAsSb/InAlGaAsSb quantum wells are experimentally studied in the subthreshold and lasing modes. The current dependence of the carrier concentration is determined using the current dependence of the total spontaneous luminescence. A lack of carrier concentration saturation with current in the lasing mode was observed. It is shown that this can be due to carrier heating at low quantum-confinement levels and an increase in light absorption by free holes in the waveguide.",

author = "Vinnichenko, \{M. Ya\} and Vorobjev, \{L. E.\} and Firsov, \{D. A.\} and Mashko, \{M. O.\} and Balagula, \{R. M.\} and G. Belenky and L. Shterengas and G. Kipshidze",

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month = nov,

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AU - Vinnichenko, M. Ya

AU - Vorobjev, L. E.

AU - Firsov, D. A.

AU - Mashko, M. O.

AU - Balagula, R. M.

AU - Belenky, G.

AU - Shterengas, L.

AU - Kipshidze, G.

PY - 2013/11

Y1 - 2013/11

N2 - The current dependences of spontaneous luminescence in mid-IR injection lasers with InGaAsSb/InAlGaAsSb quantum wells are experimentally studied in the subthreshold and lasing modes. The current dependence of the carrier concentration is determined using the current dependence of the total spontaneous luminescence. A lack of carrier concentration saturation with current in the lasing mode was observed. It is shown that this can be due to carrier heating at low quantum-confinement levels and an increase in light absorption by free holes in the waveguide.

AB - The current dependences of spontaneous luminescence in mid-IR injection lasers with InGaAsSb/InAlGaAsSb quantum wells are experimentally studied in the subthreshold and lasing modes. The current dependence of the carrier concentration is determined using the current dependence of the total spontaneous luminescence. A lack of carrier concentration saturation with current in the lasing mode was observed. It is shown that this can be due to carrier heating at low quantum-confinement levels and an increase in light absorption by free holes in the waveguide.

UR - https://www.scopus.com/pages/publications/84887285271

U2 - 10.1134/S1063782613110237

DO - 10.1134/S1063782613110237

M3 - Article

AN - SCOPUS:84887285271

SN - 1063-7826

VL - 47

SP - 1513

EP - 1516

JO - Semiconductors

JF - Semiconductors

IS - 11

ER -

Dependence of the carrier concentration on the current in mid-infrared injection lasers with quantum wells

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