Abstract
We report on the results for the diffusion coefficient (D*) of polystyrene (PS) chains near the PS/Silicon interface. The present study employs secondary ion mass spectrometry (SIMS) to examine diffusion from a deuterated marker layer in thin PS films on silicon. The observed SIMS depth profiles are fit to numerical simulations of the diffusion process. The best fit is obtained for a super-linear dependence of D* vs. distance from the silicon wall. A non-trivial time dependence extending over tens of hours is observed for all the models tested.
| Original language | English |
|---|---|
| Pages (from-to) | 151-156 |
| Number of pages | 6 |
| Journal | Materials Research Society Symposium - Proceedings |
| Volume | 543 |
| State | Published - 1999 |
| Event | Proceedings of the 1998 MRS Fall Meeting - The Symposium 'Advanced Catalytic Materials-1998' - Boston, MA, USA Duration: Nov 30 1998 → Dec 3 1998 |
Fingerprint
Dive into the research topics of 'Depth and time dependence of polystyrene chain diffusion near the polystyrene/silicon interface'. Together they form a unique fingerprint.Cite this
- APA
- Author
- BIBTEX
- Harvard
- Standard
- RIS
- Vancouver