Design and fabrication of physical vapor transport system for the growth of SiC crystals

The design features and fabrication process of physical vapor treatment (PVT) system for SiC crystal growth, were analyzed. To improve heat containment in hotzone, novel multisegmented graphite insulation was used. The temperature field was obtained inside the hotzone by numerical modeling, which also helped in predicting various growth parameters. 6H SiC single crystals were grown by modified Lely method by using PVT system. The crystals were also characterized by chemical etching using molten KOH at about 450°C. The results show that etching rate was different on Si face and C face.