TY - GEN
T1 - Design and optimization of 650V/60A double-sided cooled multichip GaN module
AU - Emon, Asif Imran
AU - Carlton, Hayden
AU - Harris, John
AU - Krone, Alexis
AU - Mirza, Abdul
AU - Hassan, Mustafeez
AU - Yuan, Zhao
AU - Huitink, David
AU - Luo, Fang
N1 - Publisher Copyright:
© 2021 IEEE.
PY - 2021/6/14
Y1 - 2021/6/14
N2 - Wide bandgap (WBG) semiconductors have become the ultimate choice for future high-performance power electronics energy conversion due to their superior material properties compared to traditional silicon power devices. Gallium nitride (GaN) high electron mobility transistor (HEMT) offers very fast switching capability enabling the designer to push switching frequency to the MHz range. Traditional device packaging becomes a limiting factor in fully harnessing the benefits offered by these advanced power devices, and thus, improved and advanced packaging structures are a must to bridge the gap between GaN devices and their applications. A co-design, co-optimization method has been followed to develop a double-sided cooled, gate driver integrated 650V/60A GaN half-bridge phase-leg power module. Power loop inductance and thermal resistance per die is optimized to 0.91 nH and 0.31°C/W which is verified using thermal simulation and experimental result.
AB - Wide bandgap (WBG) semiconductors have become the ultimate choice for future high-performance power electronics energy conversion due to their superior material properties compared to traditional silicon power devices. Gallium nitride (GaN) high electron mobility transistor (HEMT) offers very fast switching capability enabling the designer to push switching frequency to the MHz range. Traditional device packaging becomes a limiting factor in fully harnessing the benefits offered by these advanced power devices, and thus, improved and advanced packaging structures are a must to bridge the gap between GaN devices and their applications. A co-design, co-optimization method has been followed to develop a double-sided cooled, gate driver integrated 650V/60A GaN half-bridge phase-leg power module. Power loop inductance and thermal resistance per die is optimized to 0.91 nH and 0.31°C/W which is verified using thermal simulation and experimental result.
KW - Double-sided cooled
KW - Gate driver integration
KW - Half-bridge power module
KW - Vertical commutation loop
UR - https://www.scopus.com/pages/publications/85115720145
U2 - 10.1109/APEC42165.2021.9487307
DO - 10.1109/APEC42165.2021.9487307
M3 - Conference contribution
AN - SCOPUS:85115720145
T3 - Conference Proceedings - IEEE Applied Power Electronics Conference and Exposition - APEC
SP - 2313
EP - 2317
BT - 2021 IEEE Applied Power Electronics Conference and Exposition, APEC 2021
PB - Institute of Electrical and Electronics Engineers Inc.
T2 - 36th Annual IEEE Applied Power Electronics Conference and Exposition, APEC 2021
Y2 - 14 June 2021 through 17 June 2021
ER -