Design and performance of AlGaAsSb/InGaAsSb/GaSb type-I quantum well diode lasers

R. U. Martinelli; J. G. Kim; G. L. Belenky; L. Shterengas

Design and performance of AlGaAsSb/InGaAsSb/GaSb type-I quantum well diode lasers

R. U. Martinelli
, J. G. Kim
, G. L. Belenky
, L. Shterengas

Electrical Engineering

Sarnoff Corporation
Stony Brook University

Research output: Contribution to journal › Conference article › peer-review

Abstract

This paper presents the design and performance of antimonide-based, type-I, quantum-well diode lasers. Using 1.5-% compressively strained InGaAsSb quantum wells, the quaternary's miscibility gap was avoided to produce room-temperature devices emitting at 2.5 and 2.8 μm. The 2.5-μm devices output 1 W continuous wave and nearly 5 W in pulsed operation. Modal gain measurements show internal losses less than 4 cm^-1. This design should produce room-temperature diode lasers with wavelengths greater than 3 μm.

Original language	English
Pages (from-to)	39-41
Number of pages	3
Journal	OSA Trends in Optics and Photonics Series
Volume	88
State	Published - 2003
Event	Conference on Lasers and Electro-Optics (CLEO); Postconference Digest - Baltimore, MD, United States Duration: Jun 1 2003 → Jun 6 2003

Cite this

@article{edd6810655b047e0b8d7b1b6fd78d70a,

title = "Design and performance of AlGaAsSb/InGaAsSb/GaSb type-I quantum well diode lasers",

abstract = "This paper presents the design and performance of antimonide-based, type-I, quantum-well diode lasers. Using 1.5-\% compressively strained InGaAsSb quantum wells, the quaternary's miscibility gap was avoided to produce room-temperature devices emitting at 2.5 and 2.8 μm. The 2.5-μm devices output 1 W continuous wave and nearly 5 W in pulsed operation. Modal gain measurements show internal losses less than 4 cm-1. This design should produce room-temperature diode lasers with wavelengths greater than 3 μm.",

author = "Martinelli, \{R. U.\} and Kim, \{J. G.\} and Belenky, \{G. L.\} and L. Shterengas",

year = "2003",

language = "English",

volume = "88",

pages = "39--41",

journal = "OSA Trends in Optics and Photonics Series",

issn = "1094-5695",

note = "Conference on Lasers and Electro-Optics (CLEO); Postconference Digest ; Conference date: 01-06-2003 Through 06-06-2003",

}

TY - JOUR

T1 - Design and performance of AlGaAsSb/InGaAsSb/GaSb type-I quantum well diode lasers

AU - Martinelli, R. U.

AU - Kim, J. G.

AU - Belenky, G. L.

AU - Shterengas, L.

PY - 2003

Y1 - 2003

N2 - This paper presents the design and performance of antimonide-based, type-I, quantum-well diode lasers. Using 1.5-% compressively strained InGaAsSb quantum wells, the quaternary's miscibility gap was avoided to produce room-temperature devices emitting at 2.5 and 2.8 μm. The 2.5-μm devices output 1 W continuous wave and nearly 5 W in pulsed operation. Modal gain measurements show internal losses less than 4 cm-1. This design should produce room-temperature diode lasers with wavelengths greater than 3 μm.

AB - This paper presents the design and performance of antimonide-based, type-I, quantum-well diode lasers. Using 1.5-% compressively strained InGaAsSb quantum wells, the quaternary's miscibility gap was avoided to produce room-temperature devices emitting at 2.5 and 2.8 μm. The 2.5-μm devices output 1 W continuous wave and nearly 5 W in pulsed operation. Modal gain measurements show internal losses less than 4 cm-1. This design should produce room-temperature diode lasers with wavelengths greater than 3 μm.

UR - https://www.scopus.com/pages/publications/8744254419

M3 - Conference article

AN - SCOPUS:8744254419

SN - 1094-5695

VL - 88

SP - 39

EP - 41

JO - OSA Trends in Optics and Photonics Series

JF - OSA Trends in Optics and Photonics Series

T2 - Conference on Lasers and Electro-Optics (CLEO); Postconference Digest

Y2 - 1 June 2003 through 6 June 2003

ER -

Design and performance of AlGaAsSb/InGaAsSb/GaSb type-I quantum well diode lasers

Abstract

Other files and links

Fingerprint

Cite this