@inproceedings{14dd8358a28a412c84b31955dc256138,
title = "Design and performance of AlGaAsSb/InGaAsSb/GaSb type-I quantum well diode lasers",
abstract = "This paper presents the design and performance of antimonide-based, type-I, quantum-well diode lasers. Using 1.5-\% compressively strained InGaAsSb quantum wells, the quaternary's miscibility gap was avoided to produce room-temperature devices emitting at 2.5 and 2.8 µm. The 2.5-µm devices output 1 W continuous wave and nearly 5 W in pulsed operation. Modal gain measurements show internal losses less than 4 cm-1. This design should produce room-temperature diode lasers with wavelengths greater than 3 µm.",
author = "Martinelli, \{R. U.\} and Kim, \{J. G.\} and Belenky, \{G. L.\} and L. Shterengas",
note = "Publisher Copyright: {\textcopyright} 2003 OSA/CLEO, {\textcopyright} Optical Society of America.; Conference on Lasers and Electro-Optics, CLEO 2003 ; Conference date: 01-06-2003 Through 06-06-2003",
year = "2003",
language = "English",
series = "Optics InfoBase Conference Papers",
publisher = "Optica Publishing Group (formerly OSA)",
booktitle = "Conference on Lasers and Electro-Optics, CLEO 2003",
}