Design and Performance of an Analogue VLSI Cell for Pixel Detector Readout: ANAPIX: CERN R&D 19 Collaboration – I.N.F.N. Aspide project

An analogue VLSI cell for hybrid pixel detector readout, ANAPIX, has been designed and tested. The chip has been manufactured in the FASELEC SACMOS 3 micron technology. A peak detector allows asynchronous signals to be processed without precise trigger timing. An equivalent noise charge of about 100 electrons r. m. s. has been achieved on the cell alone. The cell has been wire bonded to a silicon detector pixel matrix and in the laboratory energy spectra from radioactive gamma and beta sources have been recorded with an equivalent noise charge of 200 electrons rms. The dynamic range design target of 500 to 50000 elections was not achieved yet, due to a non linearity around 4000 electrons. This problem is to be solved in the design of the second generation to be manufactured in a one micron technology. This new cell is to be connected via bump bonding to a detector, the first assemblies are expected to be ready in 1995.