TY - GEN
T1 - Design and simulation of molecular single-electron resistive switches
AU - Simonian, Nikita
AU - Mayr, Andreas
AU - Likharev, Konstantin K.
PY - 2012
Y1 - 2012
N2 - We have carried out a preliminary design and simulation of a single-electron resistive switch based on a system of two parallel, electrostatically-coupled molecules: one implementing a single-electron transistor and another serving as a single-electron trap. To verify our design, we have performed transport simulations based on the ab-initio calculation of molecules' electronic structure, and the general theory of single-electron tunneling. Our results show that molecular assemblies with a length below 10 nm and a footprint area of about 5 nm2 may combine millisecond-scale switching times with multi-year retention times, as well as high (> 103) ON/OFF current ratios, at a room temperature. Moreover, Monte Carlo simulations of self-assembled-monolayers (SAM) of the designed molecules show that such monolayers may be also used as resistive switches, with comparable characteristics, and as an addition, a substantial tolerance to fabrication defects and random offset charges.
AB - We have carried out a preliminary design and simulation of a single-electron resistive switch based on a system of two parallel, electrostatically-coupled molecules: one implementing a single-electron transistor and another serving as a single-electron trap. To verify our design, we have performed transport simulations based on the ab-initio calculation of molecules' electronic structure, and the general theory of single-electron tunneling. Our results show that molecular assemblies with a length below 10 nm and a footprint area of about 5 nm2 may combine millisecond-scale switching times with multi-year retention times, as well as high (> 103) ON/OFF current ratios, at a room temperature. Moreover, Monte Carlo simulations of self-assembled-monolayers (SAM) of the designed molecules show that such monolayers may be also used as resistive switches, with comparable characteristics, and as an addition, a substantial tolerance to fabrication defects and random offset charges.
KW - Ab-initio calculations
KW - DFT
KW - Molecular device
KW - Nonvolatile memory
KW - Resistive switch
KW - SAM
KW - Single-electronics
UR - https://www.scopus.com/pages/publications/84869186102
U2 - 10.1109/NANO.2012.6322157
DO - 10.1109/NANO.2012.6322157
M3 - Conference contribution
AN - SCOPUS:84869186102
SN - 9781467321983
T3 - Proceedings of the IEEE Conference on Nanotechnology
BT - 2012 12th IEEE International Conference on Nanotechnology, NANO 2012
T2 - 2012 12th IEEE International Conference on Nanotechnology, NANO 2012
Y2 - 20 August 2012 through 23 August 2012
ER -