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Design and simulation of molecular single-electron resistive switches

  • Stony Brook University

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

We have carried out a preliminary design and simulation of a single-electron resistive switch based on a system of two parallel, electrostatically-coupled molecules: one implementing a single-electron transistor and another serving as a single-electron trap. To verify our design, we have performed transport simulations based on the ab-initio calculation of molecules' electronic structure, and the general theory of single-electron tunneling. Our results show that molecular assemblies with a length below 10 nm and a footprint area of about 5 nm2 may combine millisecond-scale switching times with multi-year retention times, as well as high (> 103) ON/OFF current ratios, at a room temperature. Moreover, Monte Carlo simulations of self-assembled-monolayers (SAM) of the designed molecules show that such monolayers may be also used as resistive switches, with comparable characteristics, and as an addition, a substantial tolerance to fabrication defects and random offset charges.

Original languageEnglish
Title of host publication2012 12th IEEE International Conference on Nanotechnology, NANO 2012
DOIs
StatePublished - 2012
Event2012 12th IEEE International Conference on Nanotechnology, NANO 2012 - Birmingham, United Kingdom
Duration: Aug 20 2012Aug 23 2012

Publication series

NameProceedings of the IEEE Conference on Nanotechnology
ISSN (Print)1944-9399
ISSN (Electronic)1944-9380

Conference

Conference2012 12th IEEE International Conference on Nanotechnology, NANO 2012
Country/TerritoryUnited Kingdom
CityBirmingham
Period08/20/1208/23/12

Keywords

  • Ab-initio calculations
  • DFT
  • Molecular device
  • Nonvolatile memory
  • Resistive switch
  • SAM
  • Single-electronics

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