Design of high-power room-temperature continuous-wave GaSb-based type-I quantum-well lasers with λ > 2.5 μm

L. Shterengas; G. L. Belenky; J. G. Kim; R. U. Martinelli

doi:10.1088/0268-1242/19/5/016

Design of high-power room-temperature continuous-wave GaSb-based type-I quantum-well lasers with λ > 2.5 μm

L. Shterengas
, G. L. Belenky
, J. G. Kim
, R. U. Martinelli

Electrical Engineering

Stony Brook University
Sarnoff Corporation

Research output: Contribution to journal › Article › peer-review

102 Scopus citations

Abstract

Measurements of gain, loss, threshold current, device efficiency and spontaneous emission of 2.5-2.82 μm In(Al)GaAsSb/GaSb quantum-well diode lasers have been performed over a wide temperature range. The experimental results show that the thermal excitation of holes from the quantum wells into the waveguide where they recombine, but not Auger recombination, limits the continuous-wave room-temperature output power of these lasers, at least up to λ = 2.82 μm. An approach to extend the wavelength of In(Al)GaAsSb/GaSb diode lasers beyond 3 μm is discussed.

Original language	English
Pages (from-to)	655-658
Number of pages	4
Journal	Semiconductor Science and Technology
Volume	19
Issue number	5
DOIs	https://doi.org/10.1088/0268-1242/19/5/016
State	Published - May 2004

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title = "Design of high-power room-temperature continuous-wave GaSb-based type-I quantum-well lasers with λ > 2.5 μm",

abstract = "Measurements of gain, loss, threshold current, device efficiency and spontaneous emission of 2.5-2.82 μm In(Al)GaAsSb/GaSb quantum-well diode lasers have been performed over a wide temperature range. The experimental results show that the thermal excitation of holes from the quantum wells into the waveguide where they recombine, but not Auger recombination, limits the continuous-wave room-temperature output power of these lasers, at least up to λ = 2.82 μm. An approach to extend the wavelength of In(Al)GaAsSb/GaSb diode lasers beyond 3 μm is discussed.",

author = "L. Shterengas and Belenky, \{G. L.\} and Kim, \{J. G.\} and Martinelli, \{R. U.\}",

year = "2004",

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doi = "10.1088/0268-1242/19/5/016",

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pages = "655--658",

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T1 - Design of high-power room-temperature continuous-wave GaSb-based type-I quantum-well lasers with λ > 2.5 μm

AU - Shterengas, L.

AU - Belenky, G. L.

AU - Kim, J. G.

AU - Martinelli, R. U.

PY - 2004/5

Y1 - 2004/5

N2 - Measurements of gain, loss, threshold current, device efficiency and spontaneous emission of 2.5-2.82 μm In(Al)GaAsSb/GaSb quantum-well diode lasers have been performed over a wide temperature range. The experimental results show that the thermal excitation of holes from the quantum wells into the waveguide where they recombine, but not Auger recombination, limits the continuous-wave room-temperature output power of these lasers, at least up to λ = 2.82 μm. An approach to extend the wavelength of In(Al)GaAsSb/GaSb diode lasers beyond 3 μm is discussed.

AB - Measurements of gain, loss, threshold current, device efficiency and spontaneous emission of 2.5-2.82 μm In(Al)GaAsSb/GaSb quantum-well diode lasers have been performed over a wide temperature range. The experimental results show that the thermal excitation of holes from the quantum wells into the waveguide where they recombine, but not Auger recombination, limits the continuous-wave room-temperature output power of these lasers, at least up to λ = 2.82 μm. An approach to extend the wavelength of In(Al)GaAsSb/GaSb diode lasers beyond 3 μm is discussed.

UR - https://www.scopus.com/pages/publications/2542505550

U2 - 10.1088/0268-1242/19/5/016

DO - 10.1088/0268-1242/19/5/016

M3 - Article

AN - SCOPUS:2542505550

SN - 0268-1242

VL - 19

SP - 655

EP - 658

JO - Semiconductor Science and Technology

JF - Semiconductor Science and Technology

IS - 5

ER -

Design of high-power room-temperature continuous-wave GaSb-based type-I quantum-well lasers with λ > 2.5 μm

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