Design of high-power room-temperature continuous-wave GASB-based type-I quantum-well lasers with wavelength > 2.5μm

L. Shterengas; G. L. Belenky; J. G. Kim; R. U. Martinelli

Design of high-power room-temperature continuous-wave GASB-based type-I quantum-well lasers with wavelength > 2.5μm

L. Shterengas
, G. L. Belenky
, J. G. Kim
, R. U. Martinelli

Electrical Engineering

Stony Brook University
Sarnoff Corporation

Research output: Contribution to conference › Paper › peer-review

Abstract

Measurements of gain, loss, threshold current, device efficiency and spontaneous emission of 2.5-2.82μm In(Al)GaAsSb/GaSb quantum-well diode lasers have been performed over a wide temperature range. The experimental results show that the thermal excitation of holes from the quantum wells into the waveguide where they recombine, but not Auger recombination, limits the continuous-wave room-temperature output power of these lasers, at least up to λ = 2.82μm.

Original language	English
Pages	205-209
Number of pages	5
State	Published - 2004
Event	State-of-the-Art Program on Compound Semiconductors XL (SOTAPOCS XL) and Narrow Bandgap Optoelectronic Materials and Devices II - Proceedings of the International Symposium - San Antonio, TX, United States Duration: May 9 2004 → May 14 2004

Conference

Conference	State-of-the-Art Program on Compound Semiconductors XL (SOTAPOCS XL) and Narrow Bandgap Optoelectronic Materials and Devices II - Proceedings of the International Symposium
Country/Territory	United States
City	San Antonio, TX
Period	05/9/04 → 05/14/04

Cite this

Shterengas, L., Belenky, G. L., Kim, J. G., & Martinelli, R. U. (2004). Design of high-power room-temperature continuous-wave GASB-based type-I quantum-well lasers with wavelength > 2.5μm. 205-209. Paper presented at State-of-the-Art Program on Compound Semiconductors XL (SOTAPOCS XL) and Narrow Bandgap Optoelectronic Materials and Devices II - Proceedings of the International Symposium, San Antonio, TX, United States.

Shterengas, L. ; Belenky, G. L. ; Kim, J. G. et al. / Design of high-power room-temperature continuous-wave GASB-based type-I quantum-well lasers with wavelength > 2.5μm. Paper presented at State-of-the-Art Program on Compound Semiconductors XL (SOTAPOCS XL) and Narrow Bandgap Optoelectronic Materials and Devices II - Proceedings of the International Symposium, San Antonio, TX, United States.5 p.

@conference{4e842dc5bec544cbb8b0d6c29951ac45,

title = "Design of high-power room-temperature continuous-wave GASB-based type-I quantum-well lasers with wavelength > 2.5μm",

abstract = "Measurements of gain, loss, threshold current, device efficiency and spontaneous emission of 2.5-2.82μm In(Al)GaAsSb/GaSb quantum-well diode lasers have been performed over a wide temperature range. The experimental results show that the thermal excitation of holes from the quantum wells into the waveguide where they recombine, but not Auger recombination, limits the continuous-wave room-temperature output power of these lasers, at least up to λ = 2.82μm.",

author = "L. Shterengas and Belenky, \{G. L.\} and Kim, \{J. G.\} and Martinelli, \{R. U.\}",

year = "2004",

language = "English",

pages = "205--209",

note = "State-of-the-Art Program on Compound Semiconductors XL (SOTAPOCS XL) and Narrow Bandgap Optoelectronic Materials and Devices II - Proceedings of the International Symposium ; Conference date: 09-05-2004 Through 14-05-2004",

}

Shterengas, L, Belenky, GL, Kim, JG & Martinelli, RU 2004, 'Design of high-power room-temperature continuous-wave GASB-based type-I quantum-well lasers with wavelength > 2.5μm', Paper presented at State-of-the-Art Program on Compound Semiconductors XL (SOTAPOCS XL) and Narrow Bandgap Optoelectronic Materials and Devices II - Proceedings of the International Symposium, San Antonio, TX, United States, 05/9/04 - 05/14/04 pp. 205-209.

Design of high-power room-temperature continuous-wave GASB-based type-I quantum-well lasers with wavelength > 2.5μm. / Shterengas, L.; Belenky, G. L.; Kim, J. G. et al.
2004. 205-209 Paper presented at State-of-the-Art Program on Compound Semiconductors XL (SOTAPOCS XL) and Narrow Bandgap Optoelectronic Materials and Devices II - Proceedings of the International Symposium, San Antonio, TX, United States.

Research output: Contribution to conference › Paper › peer-review

TY - CONF

T1 - Design of high-power room-temperature continuous-wave GASB-based type-I quantum-well lasers with wavelength > 2.5μm

AU - Shterengas, L.

AU - Belenky, G. L.

AU - Kim, J. G.

AU - Martinelli, R. U.

PY - 2004

Y1 - 2004

N2 - Measurements of gain, loss, threshold current, device efficiency and spontaneous emission of 2.5-2.82μm In(Al)GaAsSb/GaSb quantum-well diode lasers have been performed over a wide temperature range. The experimental results show that the thermal excitation of holes from the quantum wells into the waveguide where they recombine, but not Auger recombination, limits the continuous-wave room-temperature output power of these lasers, at least up to λ = 2.82μm.

AB - Measurements of gain, loss, threshold current, device efficiency and spontaneous emission of 2.5-2.82μm In(Al)GaAsSb/GaSb quantum-well diode lasers have been performed over a wide temperature range. The experimental results show that the thermal excitation of holes from the quantum wells into the waveguide where they recombine, but not Auger recombination, limits the continuous-wave room-temperature output power of these lasers, at least up to λ = 2.82μm.

UR - https://www.scopus.com/pages/publications/5744251599

M3 - Paper

AN - SCOPUS:5744251599

SP - 205

EP - 209

T2 - State-of-the-Art Program on Compound Semiconductors XL (SOTAPOCS XL) and Narrow Bandgap Optoelectronic Materials and Devices II - Proceedings of the International Symposium

Y2 - 9 May 2004 through 14 May 2004

ER -

Shterengas L, Belenky GL, Kim JG, Martinelli RU. Design of high-power room-temperature continuous-wave GASB-based type-I quantum-well lasers with wavelength > 2.5μm. 2004. Paper presented at State-of-the-Art Program on Compound Semiconductors XL (SOTAPOCS XL) and Narrow Bandgap Optoelectronic Materials and Devices II - Proceedings of the International Symposium, San Antonio, TX, United States.

Design of high-power room-temperature continuous-wave GASB-based type-I quantum-well lasers with wavelength > 2.5μm

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