Determination of charge carrier concentration in heavily doped polycrystalline silicon films from the IR transmission and reflection spectra

V. A. Samuilov; V. F. Stel'makh; A. M. Yanovskii

doi:10.1007/BF00664786

Determination of charge carrier concentration in heavily doped polycrystalline silicon films from the IR transmission and reflection spectra

V. A. Samuilov
, V. F. Stel'makh
, A. M. Yanovskii

Materials Science and Engineering

Belarusian State University

Research output: Contribution to journal › Article › peer-review

Original language	English
Pages (from-to)	76-80
Number of pages	5
Journal	Journal of Applied Spectroscopy
Volume	52
Issue number	1
DOIs	https://doi.org/10.1007/BF00664786
State	Published - Jan 1990

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title = "Determination of charge carrier concentration in heavily doped polycrystalline silicon films from the IR transmission and reflection spectra",

author = "Samuilov, \{V. A.\} and Stel'makh, \{V. F.\} and Yanovskii, \{A. M.\}",

year = "1990",

month = jan,

doi = "10.1007/BF00664786",

language = "English",

volume = "52",

pages = "76--80",

journal = "Journal of Applied Spectroscopy",

issn = "0021-9037",

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T1 - Determination of charge carrier concentration in heavily doped polycrystalline silicon films from the IR transmission and reflection spectra

AU - Samuilov, V. A.

AU - Stel'makh, V. F.

AU - Yanovskii, A. M.

PY - 1990/1

Y1 - 1990/1

UR - https://www.scopus.com/pages/publications/34249963572

U2 - 10.1007/BF00664786

DO - 10.1007/BF00664786

M3 - Article

AN - SCOPUS:34249963572

SN - 0021-9037

VL - 52

SP - 76

EP - 80

JO - Journal of Applied Spectroscopy

JF - Journal of Applied Spectroscopy

IS - 1

ER -

Determination of charge carrier concentration in heavily doped polycrystalline silicon films from the IR transmission and reflection spectra

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