Development of Bulk InAsSb Alloys and Barrier Heterostructures for Long-Wave Infrared Detectors

Youxi Lin; Dmitry Donetsky; Ding Wang; David Westerfeld; Gela Kipshidze; Leon Shterengas; Wendy L. Sarney; Stefan P. Svensson; Gregory Belenky

doi:10.1007/s11664-015-3892-4

Development of Bulk InAsSb Alloys and Barrier Heterostructures for Long-Wave Infrared Detectors

Youxi Lin
, Dmitry Donetsky
, Ding Wang
, David Westerfeld
, Gela Kipshidze
, Leon Shterengas
, Wendy L. Sarney
, Stefan P. Svensson
, Gregory Belenky

Electrical Engineering

Stony Brook University
U.S. Army Research Laboratory

Research output: Contribution to journal › Article › peer-review

33 Scopus citations

Abstract

Bulk unrelaxed InAsSb alloys with Sb compositions up to 65% were grown on compositionally graded GaInSb and AlInSb buffers on GaSb substrates by molecular beam epitaxy. The minimum energy gap for these materials at T = 77 K was estimated to be 90 meV. Benchmark material parameters were measured for barrier photodetector heterostructures with 1-μm-thick InAs_0.6Sb_0.4 absorbers. A minority hole lifetime of 185 ns and a diffusion length of 9 μm at T = 77 K were determined from the transient response of barrier heterostructures. The data imply a hole mobility of 10³ cm²/Vs, which was confirmed with frequency response measurements. A 100-μm square mesa contact nBn heterostructure demonstrated a −3 dB frequency response bandwidth of 50 MHz.

Original language	English
Pages (from-to)	3360-3366
Number of pages	7
Journal	Journal of Electronic Materials
Volume	44
Issue number	10
DOIs	https://doi.org/10.1007/s11664-015-3892-4
State	Published - Oct 5 2015

Keywords

barrier photodetector
energy gap bowing
InAsSb
long-wave infrared

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10.1007/s11664-015-3892-4

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title = "Development of Bulk InAsSb Alloys and Barrier Heterostructures for Long-Wave Infrared Detectors",

abstract = "Bulk unrelaxed InAsSb alloys with Sb compositions up to 65\% were grown on compositionally graded GaInSb and AlInSb buffers on GaSb substrates by molecular beam epitaxy. The minimum energy gap for these materials at T = 77 K was estimated to be 90 meV. Benchmark material parameters were measured for barrier photodetector heterostructures with 1-μm-thick InAs0.6Sb0.4 absorbers. A minority hole lifetime of 185 ns and a diffusion length of 9 μm at T = 77 K were determined from the transient response of barrier heterostructures. The data imply a hole mobility of 103 cm2/Vs, which was confirmed with frequency response measurements. A 100-μm square mesa contact nBn heterostructure demonstrated a −3 dB frequency response bandwidth of 50 MHz.",

keywords = "barrier photodetector, energy gap bowing, InAsSb, long-wave infrared",

author = "Youxi Lin and Dmitry Donetsky and Ding Wang and David Westerfeld and Gela Kipshidze and Leon Shterengas and Sarney, \{Wendy L.\} and Svensson, \{Stefan P.\} and Gregory Belenky",

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doi = "10.1007/s11664-015-3892-4",

language = "English",

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journal = "Journal of Electronic Materials",

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T1 - Development of Bulk InAsSb Alloys and Barrier Heterostructures for Long-Wave Infrared Detectors

AU - Lin, Youxi

AU - Donetsky, Dmitry

AU - Wang, Ding

AU - Westerfeld, David

AU - Kipshidze, Gela

AU - Shterengas, Leon

AU - Sarney, Wendy L.

AU - Svensson, Stefan P.

AU - Belenky, Gregory

PY - 2015/10/5

Y1 - 2015/10/5

N2 - Bulk unrelaxed InAsSb alloys with Sb compositions up to 65% were grown on compositionally graded GaInSb and AlInSb buffers on GaSb substrates by molecular beam epitaxy. The minimum energy gap for these materials at T = 77 K was estimated to be 90 meV. Benchmark material parameters were measured for barrier photodetector heterostructures with 1-μm-thick InAs0.6Sb0.4 absorbers. A minority hole lifetime of 185 ns and a diffusion length of 9 μm at T = 77 K were determined from the transient response of barrier heterostructures. The data imply a hole mobility of 103 cm2/Vs, which was confirmed with frequency response measurements. A 100-μm square mesa contact nBn heterostructure demonstrated a −3 dB frequency response bandwidth of 50 MHz.

AB - Bulk unrelaxed InAsSb alloys with Sb compositions up to 65% were grown on compositionally graded GaInSb and AlInSb buffers on GaSb substrates by molecular beam epitaxy. The minimum energy gap for these materials at T = 77 K was estimated to be 90 meV. Benchmark material parameters were measured for barrier photodetector heterostructures with 1-μm-thick InAs0.6Sb0.4 absorbers. A minority hole lifetime of 185 ns and a diffusion length of 9 μm at T = 77 K were determined from the transient response of barrier heterostructures. The data imply a hole mobility of 103 cm2/Vs, which was confirmed with frequency response measurements. A 100-μm square mesa contact nBn heterostructure demonstrated a −3 dB frequency response bandwidth of 50 MHz.

KW - barrier photodetector

KW - energy gap bowing

KW - InAsSb

KW - long-wave infrared

UR - https://www.scopus.com/pages/publications/84940897886

U2 - 10.1007/s11664-015-3892-4

DO - 10.1007/s11664-015-3892-4

M3 - Article

AN - SCOPUS:84940897886

SN - 0361-5235

VL - 44

SP - 3360

EP - 3366

JO - Journal of Electronic Materials

JF - Journal of Electronic Materials

IS - 10

ER -

Development of Bulk InAsSb Alloys and Barrier Heterostructures for Long-Wave Infrared Detectors

Abstract

Keywords

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