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Developments for radiation hard silicon detectors by defect engineering - Results by the CERN RD48 (ROSE) Collaboration

  • G. Lindström
  • , M. Ahmed
  • , S. Albergo
  • , P. Allport
  • , D. Anderson
  • , L. Andricek
  • , M. M. Angarano
  • , V. Augelli
  • , N. Bacchetta
  • , P. Bartalini
  • , R. Bates
  • , U. Biggeri
  • , G. M. Bilei
  • , D. Bisello
  • , D. Boemi
  • , E. Borchi
  • , T. Botila
  • , T. J. Brodbeck
  • , M. Bruzzi
  • , T. Budzynski
  • P. Burger, F. Campabadal, G. Casse, E. Catacchini, A. Chilingarov, P. Ciampolini, V. Cindro, M. J. Costa, D. Creanza, P. Clauws, C. Da Via, G. Davies, W. De Boer, R. Dell’orso, M. De Palma, B. Dezillie, V. Eremin, O. Evrard, G. Fallica, G. Fanourakis, H. Feick, E. Focardi, L. Fonseca, E. Fretwurst, J. Fuster, K. Gabathuler, M. Glaser, P. Grabiec, E. Grigoriev, G. Hall, M. Hanlon, F. Hauler, S. Heising, A. Holmes-Siedle, R. Horisberger, G. Hughes, M. Huhtinen, I. Ilyashenko, A. Ivanov, B. K. Jones, L. Jungermann, A. Kaminsky, Z. Kohout, G. Kramberger, M. Kuhnke, S. Kwan, F. Lemeilleur, C. Leroy, M. Letheren, Z. Li, T. Ligonzo, V. Linhart, P. Litovchenko, D. Loukas, M. Lozano, Z. Luczynski, G. Lutz, B. Macevoy, S. Manolopoulos, A. Markou, C. Martinez, A. Messineo, M. Miku, M. Moll, E. Nossarzewska, G. Ottaviani, V. Oshea, G. Parrini, D. Passeri, D. Petre, A. Pickford, I. Pintilie, L. Pintilie, S. Pospisil, R. Potenza, V. Radicci, C. Raine, J. M. Rafi, P. N. Ratoff, R. H. Richter, P. Riedler, S. Roe, P. Roy, A. Ruzin, A. I. Ryazanov, A. Santocchia, L. Schiavulli, P. Sicho, I. Siotis, T. Sloan, W. Slysz, K. Smith, M. Solanky, B. Sopko, K. Stolze, B. Sundby Avset, B. Svensson, C. Tivarus, G. Tonelli, A. Tricomi, S. Tzamarias, G. Valvo, A. Vasilescu, A. Vayaki, E. Verbitskaya, P. Verdini, V. Vrba, S. Watts, E. R. Weber, M. Wegrzecki, I. Wegrzecka, P. Weilhammer, R. Wheadon, C. Wilburn, I. Wilhelm, R. Wunstorf, J. Wüstenfeld, J. Wyss, K. Zankel, P. Zabierowski, D. Zontar
  • University of Hamburg
  • Brunel University London
  • University of Catania
  • University of Liverpool
  • Fermi National Accelerator Laboratory
  • Administrative Headquarters of the Max Planck Society
  • University of Perugia
  • National Institute for Nuclear Physics
  • University of Padua
  • University of Florence
  • University of Glasgow
  • Institut de Physique des Materiaux, Bucarest-Magurele
  • Lancaster University
  • Institute of Microelectronics and Photonics
  • Canberra Semiconductor N.V
  • Centro Nacional de Microelectrónica (IMB-CNM-CSIC)
  • Dept. Física At. Mol. y Nuclear
  • University of Ljubljana
  • Ghent University
  • King's College London
  • Karlsruhe Institute of Technology
  • Brookhaven National Laboratory
  • Ioffe Physical Technical Institute
  • STMicroelectronics
  • Institute of Nuclear Physics
  • University of California at Berkeley
  • Paul Scherrer Institute
  • CERN
  • Imperial College London
  • Czech Technical University in Prague
  • Charles University
  • National Academy of Sciences of Ukraine
  • University of Modena and Reggio Emilia
  • University of Montreal
  • Tel Aviv University
  • Russian Research Centre Kurchatov Institute
  • Czech Academy of Sciences
  • CiS Institut für Mikrosensorik gGmbH
  • SINTEF
  • KTH Royal Institute of Technology
  • Horia Hulubei National Institute of Physics and Nuclear Engineering
  • Micron Semiconductor, Ltd.
  • TU Dortmund University

Research output: Contribution to journalArticlepeer-review

100 Scopus citations

Abstract

This report summarises the final results obtained by the RD48 collaboration. The emphasis is on the more practical aspects directly relevant for LHC applications. The report is based on the comprehensive survey given in the 1999 status report (RD48 3rd Status Report, CERN/LHCC 2000-009, December 1999), a recent conference report (Lindström et al. (RD48), and some latest experimental results. Additional data have been reported in the last ROSE workshop (5th ROSE workshop, CERN, CERN/LEB 2000-005). A compilation of all RD48 internal reports and a full publication list can be found on the RD48 homepage (http://cern.ch/RD48/). The success of the oxygen enrichment of FZ-silicon as a highly powerful defect engineering technique and its optimisation with various commercial manufacturers are reported. The focus is on the changes of the effective doping concentration (depletion voltage). The RD48 model for the dependence of radiation effects on fluence, temperature and operational time is verified; projections to operational scenarios for main LHC experiments demonstrate vital benefits. Progress in the microscopic understanding of damage effects as well as the application of defect kinetics models and device modelling for the prediction of the macroscopic behaviour has also been achieved but will not be covered in detail.

Original languageEnglish
Pages (from-to)60-69
Number of pages10
JournalNuclear Inst. and Methods in Physics Research, A
Volume465
Issue number1
DOIs
StatePublished - Jun 1 2001

Keywords

  • Annealing studies
  • Consequences for high energy physics applications
  • Gamma-, neutron-, proton- and pion irradiation
  • Improved radiation tolerance by oxygen enrichment
  • Silicon detectors

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