Abstract
The effect of the quantum-well nitride content on the differential gain and linewidth enhancement factor of dilute-nitride GaAs-based near 1.3-/spl mu/m lasers was studied. Gain-guided and ridge waveguide lasers with 0%, 0.5%, and 0.8% nitrogen content InGaAsN quantum wells were characterized. Experiment shows that the linewidth enhancement factor is independent on the nitride content, and is in the range 1.7-2.5 for /spl lambda/=1.22 - 1.34 /spl mu/m dilute-nitride GaAs-based lasers. Differential gain and index with respect to either current or carrier concentration are reduced in dilute-nitride devices.
| Original language | English |
|---|---|
| Pages (from-to) | 1063-1068 |
| Number of pages | 6 |
| Journal | IEEE Journal of Selected Topics in Quantum Electronics |
| Volume | 11 |
| Issue number | 5 |
| DOIs | |
| State | Published - Sep 2005 |
Keywords
- Carrier concentration
- Current concentration
- Differential gain
- Dilute-nitride GaAs
- Diode lasers
- GaAs-based lasers
- Gain-guided waveguide lasers
- InGaAs quantum wells
- Linewidth-enhancement factor
- Quantum-well nitride content
- Ridge waveguide lasers
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