Differential gain in 1.3-μm InGaAsP/InP MQW lasers with p-doped active region

L. Shterengas; C. L. Reynolds; G. Belenky; M. Hybertsen; D. Donetsky; G. Shtengel

Differential gain in 1.3-μm InGaAsP/InP MQW lasers with p-doped active region

L. Shterengas
, C. L. Reynolds
, G. Belenky
, M. Hybertsen
, D. Donetsky
, G. Shtengel

Electrical Engineering

Stony Brook University

Research output: Contribution to conference › Paper › peer-review

Abstract

A study was carried out to measure the differential gain values for 1.3-μm InGaAsP/InP MQW DFB and FP lasers with two different doping profiles. It was shown that an increase of Zn concentration in the middle of the active region from 2·10¹⁷ cm_-3 to 2·10¹⁸ cm^-3 leads to a 50% differential gain increase for FP lasers at 25°C. However, the difference grain drops with temperature more quickly for heavily doped devices. These two effects were shown to be directly linked.

Original language	English
Pages	174
Number of pages	1
State	Published - 2000
Event	Conference on Lasers and Electro-Optics (CLEO 2000) - San Francisco, CA, USA Duration: May 7 2000 → May 12 2000

Conference

Conference	Conference on Lasers and Electro-Optics (CLEO 2000)
City	San Francisco, CA, USA
Period	05/7/00 → 05/12/00

Cite this

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title = "Differential gain in 1.3-μm InGaAsP/InP MQW lasers with p-doped active region",

abstract = "A study was carried out to measure the differential gain values for 1.3-μm InGaAsP/InP MQW DFB and FP lasers with two different doping profiles. It was shown that an increase of Zn concentration in the middle of the active region from 2·1017 cm-3 to 2·1018 cm-3 leads to a 50\% differential gain increase for FP lasers at 25°C. However, the difference grain drops with temperature more quickly for heavily doped devices. These two effects were shown to be directly linked.",

author = "L. Shterengas and Reynolds, \{C. L.\} and G. Belenky and M. Hybertsen and D. Donetsky and G. Shtengel",

year = "2000",

language = "English",

pages = "174",

note = "Conference on Lasers and Electro-Optics (CLEO 2000) ; Conference date: 07-05-2000 Through 12-05-2000",

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TY - CONF

T1 - Differential gain in 1.3-μm InGaAsP/InP MQW lasers with p-doped active region

AU - Shterengas, L.

AU - Reynolds, C. L.

AU - Belenky, G.

AU - Hybertsen, M.

AU - Donetsky, D.

AU - Shtengel, G.

PY - 2000

Y1 - 2000

N2 - A study was carried out to measure the differential gain values for 1.3-μm InGaAsP/InP MQW DFB and FP lasers with two different doping profiles. It was shown that an increase of Zn concentration in the middle of the active region from 2·1017 cm-3 to 2·1018 cm-3 leads to a 50% differential gain increase for FP lasers at 25°C. However, the difference grain drops with temperature more quickly for heavily doped devices. These two effects were shown to be directly linked.

AB - A study was carried out to measure the differential gain values for 1.3-μm InGaAsP/InP MQW DFB and FP lasers with two different doping profiles. It was shown that an increase of Zn concentration in the middle of the active region from 2·1017 cm-3 to 2·1018 cm-3 leads to a 50% differential gain increase for FP lasers at 25°C. However, the difference grain drops with temperature more quickly for heavily doped devices. These two effects were shown to be directly linked.

UR - https://www.scopus.com/pages/publications/0034545023

M3 - Paper

AN - SCOPUS:0034545023

SP - 174

T2 - Conference on Lasers and Electro-Optics (CLEO 2000)

Y2 - 7 May 2000 through 12 May 2000

ER -

Differential gain in 1.3-μm InGaAsP/InP MQW lasers with p-doped active region

Abstract

Conference

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