TY - GEN
T1 - Diffraction limited 3.15 μm cascade diode lasers
AU - Liang, Rui
AU - Shterengas, Leon
AU - Hosoda, Takashi
AU - Stein, Aaron
AU - Lu, Ming
AU - Kipshidze, Gela
AU - Belenky, Gregory
PY - 2014
Y1 - 2014
N2 - Semiconductor lasers operating in continuous wave (CW) regime at room temperature (RT) above 3 μm are in demand for spectroscopic application since many atmospheric and industrial gases, for instance, methane, ethane, acetylene, etc, have strong absorption lines in this spectral region. Compact and efficient devices emitting diffraction limited beam are prerequisite for tunable diode laser spectroscopy sources based on either distributed feedback1 or external cavity concept2. Narrow ridge waveguide GaSb-based type-I quantum well (QW) diode lasers have been reported3. Our research group had proposed and demonstrated a novel approach to enhance the power and efficiency of GaSb-based type-I QW diode lasers by utilizing cascade pumping scheme4. The carriers were recycled with 100% efficiency between two gain stages, resulting in twofold increase of the device slope efficiency as compared to the single stage diode lasers. Multimode cascade diode lasers with 100-μm-wide ridges demonstrated CW output power of 590 mW and power conversion efficiency above 10% at RT.
AB - Semiconductor lasers operating in continuous wave (CW) regime at room temperature (RT) above 3 μm are in demand for spectroscopic application since many atmospheric and industrial gases, for instance, methane, ethane, acetylene, etc, have strong absorption lines in this spectral region. Compact and efficient devices emitting diffraction limited beam are prerequisite for tunable diode laser spectroscopy sources based on either distributed feedback1 or external cavity concept2. Narrow ridge waveguide GaSb-based type-I quantum well (QW) diode lasers have been reported3. Our research group had proposed and demonstrated a novel approach to enhance the power and efficiency of GaSb-based type-I QW diode lasers by utilizing cascade pumping scheme4. The carriers were recycled with 100% efficiency between two gain stages, resulting in twofold increase of the device slope efficiency as compared to the single stage diode lasers. Multimode cascade diode lasers with 100-μm-wide ridges demonstrated CW output power of 590 mW and power conversion efficiency above 10% at RT.
UR - https://www.scopus.com/pages/publications/84906568261
U2 - 10.1109/DRC.2014.6872288
DO - 10.1109/DRC.2014.6872288
M3 - Conference contribution
AN - SCOPUS:84906568261
SN - 9781479954056
T3 - Device Research Conference - Conference Digest, DRC
SP - 37
EP - 38
BT - 72nd Device Research Conference, DRC 2014 - Conference Digest
PB - Institute of Electrical and Electronics Engineers Inc.
T2 - 72nd Device Research Conference, DRC 2014
Y2 - 22 June 2014 through 25 June 2014
ER -