Diode lasers emitting at 3m with 300mW of continuous-wave output power

L. Shterengas; G. Kipshidze; T. Hosoda; J. Chen; G. Belenky

doi:10.1049/el.2009.1827

Diode lasers emitting at 3m with 300mW of continuous-wave output power

L. Shterengas
, G. Kipshidze
, T. Hosoda
, J. Chen
, G. Belenky

Electrical Engineering

Stony Brook University

Research output: Contribution to journal › Article › peer-review

22 Scopus citations

Abstract

Type-I double-quantum-well GaSb-based diode lasers operating at 3m with room-temperature continuous-wave output power above 300mW and peak power-conversion efficiency near 8% were designed and fabricated. Laser heterostructure comprised quinary AlGaInAsSb alloy as barrier and waveguide material. Use of quinary alloy resulted in adequate hole confinement. The waveguide thickness was chosen to maximise modal differential gain. Continuous-wave threshold current density about 100A/cm² per quantum-well and slope efficiency of 100mW/A were demonstrated at 17°C.

Original language	English
Pages (from-to)	942-943
Number of pages	2
Journal	Electronics Letters
Volume	45
Issue number	18
DOIs	https://doi.org/10.1049/el.2009.1827
State	Published - 2009

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abstract = "Type-I double-quantum-well GaSb-based diode lasers operating at 3m with room-temperature continuous-wave output power above 300mW and peak power-conversion efficiency near 8\% were designed and fabricated. Laser heterostructure comprised quinary AlGaInAsSb alloy as barrier and waveguide material. Use of quinary alloy resulted in adequate hole confinement. The waveguide thickness was chosen to maximise modal differential gain. Continuous-wave threshold current density about 100A/cm2 per quantum-well and slope efficiency of 100mW/A were demonstrated at 17°C.",

author = "L. Shterengas and G. Kipshidze and T. Hosoda and J. Chen and G. Belenky",

year = "2009",

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journal = "Electronics Letters",

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T1 - Diode lasers emitting at 3m with 300mW of continuous-wave output power

AU - Shterengas, L.

AU - Kipshidze, G.

AU - Hosoda, T.

AU - Chen, J.

AU - Belenky, G.

PY - 2009

Y1 - 2009

N2 - Type-I double-quantum-well GaSb-based diode lasers operating at 3m with room-temperature continuous-wave output power above 300mW and peak power-conversion efficiency near 8% were designed and fabricated. Laser heterostructure comprised quinary AlGaInAsSb alloy as barrier and waveguide material. Use of quinary alloy resulted in adequate hole confinement. The waveguide thickness was chosen to maximise modal differential gain. Continuous-wave threshold current density about 100A/cm2 per quantum-well and slope efficiency of 100mW/A were demonstrated at 17°C.

AB - Type-I double-quantum-well GaSb-based diode lasers operating at 3m with room-temperature continuous-wave output power above 300mW and peak power-conversion efficiency near 8% were designed and fabricated. Laser heterostructure comprised quinary AlGaInAsSb alloy as barrier and waveguide material. Use of quinary alloy resulted in adequate hole confinement. The waveguide thickness was chosen to maximise modal differential gain. Continuous-wave threshold current density about 100A/cm2 per quantum-well and slope efficiency of 100mW/A were demonstrated at 17°C.

UR - https://www.scopus.com/pages/publications/69549124233

U2 - 10.1049/el.2009.1827

DO - 10.1049/el.2009.1827

M3 - Article

AN - SCOPUS:69549124233

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VL - 45

SP - 942

EP - 943

JO - Electronics Letters

JF - Electronics Letters

IS - 18

ER -

Diode lasers emitting at 3m with 300mW of continuous-wave output power

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