Abstract
In addition to pure threading screw dislocations (TSDs), the presence of threading mixed dislocations (TMDs) (with a component) has been reported both in 4H-SiC axial slices (wafers cut parallel to the growth axis) and in commercial offcut wafers (cut almost perpendicular to the growth axis). In this paper, we first demonstrate a method to quickly distinguish TMDs from TSDs in axial slices via synchrotron white-beam x-ray topography. Since such axial slices are usually not available for commercial purposes, a systematic method is then developed and demonstrated here to unambiguously determine the Burgers vectors of TMDs in 4H-SiC commercial offcut wafers. In this second study, both synchrotron monochromatic-beam x-ray topography and ray-tracing simulation are used. The x-ray topographs were recorded using grazing-incidence geometry. The principle of this method is that the contrast of dislocations on different reflections varies with the relative orientation of Burgers vectors with respect to the diffraction vectors. Measurements confirm that, in a commercial offcut wafer, the majority of the threading dislocations with screw component are mixed-type dislocations.
| Original language | English |
|---|---|
| Pages (from-to) | 2045-2050 |
| Number of pages | 6 |
| Journal | Journal of Electronic Materials |
| Volume | 45 |
| Issue number | 4 |
| DOIs | |
| State | Published - Apr 1 2016 |
Keywords
- bulk growth
- physical vapor transport
- ray-tracing simulation
- Silicon carbide
- threading dislocations
- x-ray topography
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