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Direct determination of burgers vectors of threading mixed dislocations in 4h-SiC c-plane wafers grown By PVT method

  • Stony Brook University

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

2 Scopus citations

Abstract

A systematic method is developed and demonstrated here to determine the Burgers vectors of threading mixed dislocations in 4H-SiC c-plane offcut wafers grown by PVT method. Both Synchrotron Monochromatic X-ray Topography and Ray Tracing Simulations are used in this method. Measurements confirm that in a commercial offcut wafer the majority of the threading dislocations with screw component are actually mixed type dislocations.

Original languageEnglish
Title of host publicationGaN and SiC Power Technologies 5
EditorsK. Shenai, M. Dudley, N. Ohtani, M. Bakowski
PublisherElectrochemical Society Inc.
Pages33-38
Number of pages6
Edition11
ISBN (Electronic)9781607685395
DOIs
StatePublished - 2015
EventSymposium on GaN and SiC Power Technologies 5 - 228th ECS Meeting - Phoenix, United States
Duration: Oct 11 2015Oct 15 2015

Publication series

NameECS Transactions
Number11
Volume69
ISSN (Print)1938-6737
ISSN (Electronic)1938-5862

Conference

ConferenceSymposium on GaN and SiC Power Technologies 5 - 228th ECS Meeting
Country/TerritoryUnited States
CityPhoenix
Period10/11/1510/15/15

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