@inproceedings{b010586d9f534fdebaa363055ff62a20,
title = "Dislocation characterization in 4H-SiC crystals",
abstract = "Definitive correlations are presented between specific types of dislocations identified via Synchrotron X-Ray Topography (SXRT) and identified via selective etching of 4H-SiC substrates. A variety of etch conditions and the results on different faces of SiC substrates and epiwafers are examined. Hillocks formed on the carbon face of the substrate after KOH etching correlate very well to Threading Screw Dislocations (TSDs) identified via SXRT. Topography of substrates and of vertical crystal slices reveals a large proportion of Threading Mixed character Dislocations (TMDs) in the population of TSDs.",
keywords = "Dislocations, Hillocks, Selective etching, Threading dislocations, Threading mixed character dislocations{\textquoteright}, Topography",
author = "Sumakeris, \{J. J.\} and Leonard, \{R. T.\} and E. Deyneka and Y. Khlebnikov and Powell, \{A. R.\} and J. Seaman and Paisley, \{M. J.\} and V. Tsvetkov and J. Guo and Y. Yang and M. Dudley and E. Balkas",
note = "Publisher Copyright: {\textcopyright} 2016 Trans Tech Publications, Switzerland.; 16th International Conference on Silicon Carbide and Related Materials, ICSCRM 2015 ; Conference date: 04-10-2015 Through 09-10-2015",
year = "2016",
doi = "10.4028/www.scientific.net/MSF.858.393",
language = "English",
isbn = "9783035710427",
series = "Materials Science Forum",
publisher = "Trans Tech Publications Ltd",
pages = "393--396",
editor = "Fabrizio Roccaforte and Filippo Giannazzo and \{La Via\}, Francesco and Roberta Nipoti and Danilo Crippa and Mario Saggio",
booktitle = "Silicon Carbide and Related Materials 2015",
}