Dislocation Contrast Analysis in Weak Beam Synchrotron X-Ray Topography

Hongyu Peng; Zeyu Chen; Yafei Liu; Qianyu Cheng; Shanshan Hu; Xianrong Huang; Lahsen Assoufid; Balaji Raghothamachar; Michael Dudley

doi:10.4028/p-u7m9jr

Dislocation Contrast Analysis in Weak Beam Synchrotron X-Ray Topography

Hongyu Peng
, Zeyu Chen
, Yafei Liu
, Qianyu Cheng
, Shanshan Hu
, Xianrong Huang
, Lahsen Assoufid
, Balaji Raghothamachar
, Michael Dudley

Materials Science and Engineering

Stony Brook University
United States Department of Energy

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

Abstract

Synchrotron monochromatic beam X-ray topography has been widely applied to characterize structural defects in SiC crystals. Using ray tracing simulations, the dislocation contrast in X-ray topography under strong diffraction conditions (diffraction takes place at or near Bragg angle) has been intensively investigated. However, the contrast and the configurations of the dislocation images recorded under weak diffraction conditions have not been fully investigated. Recently, we demonstrated that the contrast of dislocations in synchrotron grazing incidence topography under weak diffraction conditions can also be analyzed and interpreted by applying ray tracing principles. In this study, we have extended the application of the ray tracing method to analyze the dislocation contrast in weak beam synchrotron back reflection and rocking curve topography. The ray tracing method is shown to successfully simulate and correlate the contrast of threading screw dislocations at various positions on the rocking curve and thus allow to determine the signs of Burgers vectors.

Original language	English
Title of host publication	Silicon Carbide and Related Materials 2021- Selected peer-reviewed extended papers abstracts of which were presented at the 13th European Conference on Silicon Carbide and Related Materials, ECSCRM 2021
Editors	Jean François Michaud, Luong Viet Phung, Daniel Alquier, Dominique Planson
Publisher	Trans Tech Publications Ltd
Pages	356-360
Number of pages	5
ISBN (Print)	9783035727609
DOIs	https://doi.org/10.4028/p-u7m9jr
State	Published - 2022
Event	13th European Conference on Silicon Carbide and Related Materials, ECSCRM 2021 - Virtual, Online Duration: Oct 24 2021 → Oct 28 2021

Publication series

Name	Materials Science Forum
Volume	1062 MSF
ISSN (Print)	0255-5476
ISSN (Electronic)	1662-9752

Conference

Conference	13th European Conference on Silicon Carbide and Related Materials, ECSCRM 2021
City	Virtual, Online
Period	10/24/21 → 10/28/21

Keywords

Dislocation Contrast
Weak Beam Topography
X-ray Topography

Access to Document

10.4028/p-u7m9jr

Cite this

Peng, H., Chen, Z., Liu, Y., Cheng, Q., Hu, S., Huang, X., Assoufid, L., Raghothamachar, B., & Dudley, M. (2022). Dislocation Contrast Analysis in Weak Beam Synchrotron X-Ray Topography. In J. F. Michaud, L. V. Phung, D. Alquier, & D. Planson (Eds.), Silicon Carbide and Related Materials 2021- Selected peer-reviewed extended papers abstracts of which were presented at the 13th European Conference on Silicon Carbide and Related Materials, ECSCRM 2021 (pp. 356-360). (Materials Science Forum; Vol. 1062 MSF). Trans Tech Publications Ltd. https://doi.org/10.4028/p-u7m9jr

Peng, Hongyu ; Chen, Zeyu ; Liu, Yafei et al. / Dislocation Contrast Analysis in Weak Beam Synchrotron X-Ray Topography. Silicon Carbide and Related Materials 2021- Selected peer-reviewed extended papers abstracts of which were presented at the 13th European Conference on Silicon Carbide and Related Materials, ECSCRM 2021. editor / Jean François Michaud ; Luong Viet Phung ; Daniel Alquier ; Dominique Planson. Trans Tech Publications Ltd, 2022. pp. 356-360 (Materials Science Forum).

@inproceedings{eff4783abef7412e864b2fc2738f0e9c,

title = "Dislocation Contrast Analysis in Weak Beam Synchrotron X-Ray Topography",

abstract = "Synchrotron monochromatic beam X-ray topography has been widely applied to characterize structural defects in SiC crystals. Using ray tracing simulations, the dislocation contrast in X-ray topography under strong diffraction conditions (diffraction takes place at or near Bragg angle) has been intensively investigated. However, the contrast and the configurations of the dislocation images recorded under weak diffraction conditions have not been fully investigated. Recently, we demonstrated that the contrast of dislocations in synchrotron grazing incidence topography under weak diffraction conditions can also be analyzed and interpreted by applying ray tracing principles. In this study, we have extended the application of the ray tracing method to analyze the dislocation contrast in weak beam synchrotron back reflection and rocking curve topography. The ray tracing method is shown to successfully simulate and correlate the contrast of threading screw dislocations at various positions on the rocking curve and thus allow to determine the signs of Burgers vectors.",

keywords = "Dislocation Contrast, Weak Beam Topography, X-ray Topography",

author = "Hongyu Peng and Zeyu Chen and Yafei Liu and Qianyu Cheng and Shanshan Hu and Xianrong Huang and Lahsen Assoufid and Balaji Raghothamachar and Michael Dudley",

note = "Publisher Copyright: {\textcopyright} 2022 The Author(s). Published by Trans Tech Publications Ltd, Switzerland.; 13th European Conference on Silicon Carbide and Related Materials, ECSCRM 2021 ; Conference date: 24-10-2021 Through 28-10-2021",

year = "2022",

doi = "10.4028/p-u7m9jr",

language = "English",

isbn = "9783035727609",

series = "Materials Science Forum",

publisher = "Trans Tech Publications Ltd",

pages = "356--360",

editor = "Michaud, \{Jean Fran{\c c}ois\} and Phung, \{Luong Viet\} and Daniel Alquier and Dominique Planson",

booktitle = "Silicon Carbide and Related Materials 2021- Selected peer-reviewed extended papers abstracts of which were presented at the 13th European Conference on Silicon Carbide and Related Materials, ECSCRM 2021",

}

Peng, H, Chen, Z, Liu, Y, Cheng, Q, Hu, S, Huang, X, Assoufid, L, Raghothamachar, B & Dudley, M 2022, Dislocation Contrast Analysis in Weak Beam Synchrotron X-Ray Topography. in JF Michaud, LV Phung, D Alquier & D Planson (eds), Silicon Carbide and Related Materials 2021- Selected peer-reviewed extended papers abstracts of which were presented at the 13th European Conference on Silicon Carbide and Related Materials, ECSCRM 2021. Materials Science Forum, vol. 1062 MSF, Trans Tech Publications Ltd, pp. 356-360, 13th European Conference on Silicon Carbide and Related Materials, ECSCRM 2021, Virtual, Online, 10/24/21. https://doi.org/10.4028/p-u7m9jr

Dislocation Contrast Analysis in Weak Beam Synchrotron X-Ray Topography. / Peng, Hongyu; Chen, Zeyu; Liu, Yafei et al.
Silicon Carbide and Related Materials 2021- Selected peer-reviewed extended papers abstracts of which were presented at the 13th European Conference on Silicon Carbide and Related Materials, ECSCRM 2021. ed. / Jean François Michaud; Luong Viet Phung; Daniel Alquier; Dominique Planson. Trans Tech Publications Ltd, 2022. p. 356-360 (Materials Science Forum; Vol. 1062 MSF).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - Dislocation Contrast Analysis in Weak Beam Synchrotron X-Ray Topography

AU - Peng, Hongyu

AU - Chen, Zeyu

AU - Liu, Yafei

AU - Cheng, Qianyu

AU - Hu, Shanshan

AU - Huang, Xianrong

AU - Assoufid, Lahsen

AU - Raghothamachar, Balaji

AU - Dudley, Michael

PY - 2022

Y1 - 2022

N2 - Synchrotron monochromatic beam X-ray topography has been widely applied to characterize structural defects in SiC crystals. Using ray tracing simulations, the dislocation contrast in X-ray topography under strong diffraction conditions (diffraction takes place at or near Bragg angle) has been intensively investigated. However, the contrast and the configurations of the dislocation images recorded under weak diffraction conditions have not been fully investigated. Recently, we demonstrated that the contrast of dislocations in synchrotron grazing incidence topography under weak diffraction conditions can also be analyzed and interpreted by applying ray tracing principles. In this study, we have extended the application of the ray tracing method to analyze the dislocation contrast in weak beam synchrotron back reflection and rocking curve topography. The ray tracing method is shown to successfully simulate and correlate the contrast of threading screw dislocations at various positions on the rocking curve and thus allow to determine the signs of Burgers vectors.

AB - Synchrotron monochromatic beam X-ray topography has been widely applied to characterize structural defects in SiC crystals. Using ray tracing simulations, the dislocation contrast in X-ray topography under strong diffraction conditions (diffraction takes place at or near Bragg angle) has been intensively investigated. However, the contrast and the configurations of the dislocation images recorded under weak diffraction conditions have not been fully investigated. Recently, we demonstrated that the contrast of dislocations in synchrotron grazing incidence topography under weak diffraction conditions can also be analyzed and interpreted by applying ray tracing principles. In this study, we have extended the application of the ray tracing method to analyze the dislocation contrast in weak beam synchrotron back reflection and rocking curve topography. The ray tracing method is shown to successfully simulate and correlate the contrast of threading screw dislocations at various positions on the rocking curve and thus allow to determine the signs of Burgers vectors.

KW - Dislocation Contrast

KW - Weak Beam Topography

KW - X-ray Topography

UR - https://www.scopus.com/pages/publications/85134258687

U2 - 10.4028/p-u7m9jr

DO - 10.4028/p-u7m9jr

M3 - Conference contribution

AN - SCOPUS:85134258687

SN - 9783035727609

T3 - Materials Science Forum

SP - 356

EP - 360

BT - Silicon Carbide and Related Materials 2021- Selected peer-reviewed extended papers abstracts of which were presented at the 13th European Conference on Silicon Carbide and Related Materials, ECSCRM 2021

A2 - Michaud, Jean François

A2 - Phung, Luong Viet

A2 - Alquier, Daniel

A2 - Planson, Dominique

PB - Trans Tech Publications Ltd

T2 - 13th European Conference on Silicon Carbide and Related Materials, ECSCRM 2021

Y2 - 24 October 2021 through 28 October 2021

ER -

Peng H, Chen Z, Liu Y, Cheng Q, Hu S, Huang X et al. Dislocation Contrast Analysis in Weak Beam Synchrotron X-Ray Topography. In Michaud JF, Phung LV, Alquier D, Planson D, editors, Silicon Carbide and Related Materials 2021- Selected peer-reviewed extended papers abstracts of which were presented at the 13th European Conference on Silicon Carbide and Related Materials, ECSCRM 2021. Trans Tech Publications Ltd. 2022. p. 356-360. (Materials Science Forum). doi: 10.4028/p-u7m9jr

Dislocation Contrast Analysis in Weak Beam Synchrotron X-Ray Topography

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