Abstract
The contrast of dislocations in 4H-SiC crystals shows distinctive features on grazing-incidence X-ray topographs for diffraction at different positions on the operative rocking curve. Ray-tracing simulations have previously been successfully applied to describe the dislocation contrast at the peak of a rocking curve.The present work shows that the dislocation images observed under weak diffraction conditions can also be simulated using the ray-tracing method. These simulations indicate that the contrast of the dislocations is dominated by orientation contrast. Analysis of the effective misorientation reveals that the dislocation contrast in weak-beam topography is more sensitive to the local lattice distortion, consequently enabling information to be obtained on the dislocation sense which cannot be obtained from the peak.
| Original language | English |
|---|---|
| Pages (from-to) | 1225-1233 |
| Number of pages | 9 |
| Journal | Journal of Applied Crystallography |
| Volume | 54 |
| DOIs | |
| State | Published - Aug 1 2021 |
Keywords
- dislocations
- ray-tracing simulation
- weak diffraction
- X-ray topography
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